SNOSD52B August   2018  – January 2020 TLV1805-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Reverse Current Protection Using an N-Channel MOSFET
      2.      Reverse Current & Overvoltage Protection Using P-Channel MOSFETs
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Rail to Rail Inputs
      2. 7.3.2 Power On Reset
      3. 7.3.3 High Power Push-Pull Output
      4. 7.3.4 Shutdown Function
      5. 7.3.5 Internal Hysteresis
    4. 7.4 Device Functional Modes
      1. 7.4.1 External Hysteresis
        1. 7.4.1.1 Inverting Comparator With Hysteresis
        2. 7.4.1.2 Noninverting Comparator With Hysteresis
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
      4. 8.2.4 Reverse Current Protection Using MOSFET and TLV1805-Q1
        1. 8.2.4.1 Minimum Reverse Current
        2. 8.2.4.2 N-Channel Reverse Current Protection Circuit
          1. 8.2.4.2.1 N-Channel Oscillator Circuit
      5. 8.2.5 P-Channel Reverse Current Protection Circuit
      6. 8.2.6 P-Channel Reverse Current Protection With Overvotlage Protection
      7. 8.2.7 ORing MOSFET Controller
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The TLV1805-Q1 high voltage comparator offers the unique combination of wide supply range, push-pull output, rail-to-rail inputs, low quiescent current, shutdown capability and fast output response. All these features make this comparator well-suited for applications that require sensing at the positive or negative voltage rails such as reverse current protection for a smart diode controller, overcurrent sensing, and overvoltage protection circuits where the push-pull output stage is used to drive the gate of a p-channel or n-channel MOSFET switch.

The high peak current push-pull output stage, which is unique for high-voltage comparators, offers the advantage of allowing the output to actively drive the load to either supply rail with a fast edge rate. This is especially valuable in applications where a MOSFET gate needs to be driven high or low quickly in order to connect or disconnect a host from an unexpected high voltage supply. Additional features such as low input offset voltage, low input bias currents and High-Z shutdown make the TLV1805-Q1 flexible enough to handle a broad range of applications. Power-On reset prevents false outputs at power-up.

The TLV1805-Q1 is AEC-Q100 qualified in a 6-pin SOT-23 package and is specified for operation across the automotive Grade 1 temperature range of –40°C to +125°C.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TLV1805-Q1 SOT-23 (6) 1.60 mm × 2.90 mm
  1. For all available packages, see the package option addendum at the end of the datasheet.