SNOSDG0 August   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Diagrams
    7. 5.7 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
    4. 6.4 Device Functional Modes
      1. 6.4.1 Inputs
      2. 6.4.2 Push-Pull (Single-Ended) Output
      3. 6.4.3 Known Startup Condition
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Adjustable Hysteresis
      2. 7.1.2 Capacitive Loads
      3. 7.1.3 Latch Functionality
    2. 7.2 Typical Application
      1. 7.2.1 Implementing Adjustable Hystseresis
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Optical Receiver
      3. 7.2.3 Over-Current Latch Condition
      4. 7.2.4 External Trigger Function
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Documentation Support
    1. 8.1 Related Documentation
      1. 8.1.1 Development Support
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Detailed Design Procedure

The hysteresis vs. resistance curve (Figure 8-2) is used as guidance to set the desired amount of hysteresis.

TLV1H103-SEP VHYST vs. RHYST at 5V curveFigure 7-7 VHYST vs. RHYST at 5V curve
TLV1H103-SEP Setting the Hysteresis using a Resistor using the TLV1H103-SEPFigure 7-8 Setting the Hysteresis using a Resistor using the TLV1H103-SEP

Figure 8-2 shows that for a 30mV hysteresis, a 150kΩ resistor must be placed from the LE/HYS pin to VEE, as shown in Figure 7-8.

Also possible is to use an external voltage to dynamically program the VHYST. Please see the Adjustable Hysteresis section for more details.