SNOSDG0 August   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Diagrams
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
    4. 6.4 Device Functional Modes
      1. 6.4.1 Inputs
      2. 6.4.2 Push-Pull (Single-Ended) Output
      3. 6.4.3 Known Startup Condition
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Adjustable Hysteresis
      2. 7.1.2 Capacitive Loads
      3. 7.1.3 Latch Functionality
    2. 7.2 Typical Application
      1. 7.2.1 Implementing Adjustable Hystseresis
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Optical Receiver
      3. 7.2.3 Over-Current Latch Condition
      4. 7.2.4 External Trigger Function
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Documentation Support
    1. 8.1 Related Documentation
      1. 8.1.1 Development Support
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) TLV1H103 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 191.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 117.1 °C/W
RθJC(bottom) Junction-to-case (bottom) thermal resistance 79.1 °C/W
RθJB Junction-to-board thermal resistance 56.7 °C/W
ψJT Junction-to-top characterization parameter 78.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics report.