The TLVx333 series of CMOS operational amplifiers offer precision performance at a very competitive price. These devices are members of the zero-drift family of amplifiers that uses a proprietary auto-calibration technique to simultaneously provide low offset voltage (15 μV, max) and near-zero drift over time and temperature at only 28 μA (max) of quiescent current. The TLVx333 family features rail-to-rail input and output in addition to near-flat 1/f noise, making this amplifier ideal for many applications and much easier to design into a system. These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V).
The TLV333 (single version) is available in the SC70-5, SOT23-5, and SOIC-8 packages. The TLV2333 (dual version) is offered in VSSOP-8 and SOIC-8 packages. The TLV4333 is offered in the standard SOIC-14 and TSSOP-14 packages. All versions are specified for operation from –40°C to +125°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TLV333 | SOIC (8) | 4.90 mm × 3.91 mm |
SOT-23 (5) | 2.90 mm × 1.60 mm | |
SC70 (5) | 2.00 mm × 1.25 mm | |
TLV2333 | SOIC (8) | 4.90 mm × 3.91 mm |
VSSOP (8) | 3.00 mm × 3.00 mm | |
TLV4333 | SOIC (14) | 8.65 mm × 3.91 |
TSSOP (14) | 5.00 mm × 4.40 mm |
DATE | REVISION | NOTES |
---|---|---|
December 2015 | * | Initial release. |
DEVICE | NO. OF CHANNELS |
PACKAGE-LEADS | ||||
---|---|---|---|---|---|---|
SOIC | SOT23 | SC70 | VSSOP | TSSOP | ||
TLV333 | 1 | 8 | 5 | 5 | — | — |
TLV2333 | 2 | 8 | — | — | 8 | — |
TLV4333 | 4 | 14 | — | — | — | 14 |
PIN | I/O | DESCRIPTION | |||
---|---|---|---|---|---|
NAME | NO. | ||||
DBV (SOT23) |
DCK (SC70) |
D (SOIC) |
|||
–IN | 4 | 3 | 2 | I | Inverting input |
+IN | 3 | 1 | 3 | I | Noninverting input |
NC | — | — | 1, 5, 8 | — | No internal connection (can be left floating) |
OUT | 1 | 4 | 6 | O | Output |
V– | 2 | 2 | 4 | — | Negative (lowest) power supply |
V+ | 5 | 5 | 7 | — | Positive (highest) power supply |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
D (SOIC, VSSOP) |
|||
–IN A | 2 | I | Inverting input, channel A |
+IN A | 3 | I | Noninverting input, channel A |
–IN B | 6 | I | Inverting input, channel B |
+IN B | 5 | I | Noninverting input, channel B |
OUT A | 1 | O | Output, channel A |
OUT B | 7 | O | Output, channel B |
V– | 4 | — | Negative (lowest) power supply |
V+ | 8 | — | Positive (highest) power supply |
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | NO. | |||
D (SOIC) | PW (TSSOP) | |||
–IN A | 2 | 2 | I | Inverting input, channel A |
+IN A | 3 | 3 | I | Noninverting input, channel A |
–IN B | 6 | 6 | I | Inverting input, channel B |
+IN B | 5 | 5 | I | Noninverting input, channel B |
–IN C | 9 | 9 | I | Inverting input, channel C |
+IN C | 10 | 10 | I | Noninverting input, channel C |
–IN D | 13 | 13 | I | Inverting input, channel D |
+IN D | 12 | 12 | I | Noninverting input, channel D |
OUT A | 1 | 1 | O | Output, channel A |
OUT B | 7 | 7 | O | Output, channel B |
OUT C | 8 | 8 | O | Output, channel C |
OUT D | 14 | 14 | O | Output, channel D |
V– | 11 | 11 | — | Negative (lowest) power supply |
V+ | 4 | 4 | — | Positive (highest) power supply |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | VS = (V+) – (V–) | 7 | V | |
Signal input pins(2) | Voltage | (V–) –0.3 | (V+) + 0.3 | V |
Current | –10 | 10 | mA | |
Output short-circuit(3) | Continuous | |||
Temperature | Operating | –40 | 150 | °C |
Junction | 150 | |||
Storage, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VS | Supply voltage | 1.8 | 5.5 | V | |
Specified temperature range | –40 | 125 | °C |
THERMAL METRIC(1) | TLV333 | UNIT | |||
---|---|---|---|---|---|
D (SOIC) |
DBV (SOT23) |
DCK (SC70) |
|||
8 PINS | 5 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 140.1 | 220.8 | 298.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 89.8 | 97.5 | 65.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 80.6 | 61.7 | 97.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 28.7 | 7.6 | 0.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 80.1 | 61.1 | 95.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | n/a | n/a | °C/W |
THERMAL METRIC(1) | TLV2333 | UNIT | ||
---|---|---|---|---|
D (SOIC) |
DGK (VSSOP) |
|||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 124.0 | 180.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 73.7 | 48.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 64.4 | 100.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 18.0 | 2.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 63.9 | 99.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | n/a | °C/W |
THERMAL METRIC(1) | TLV4333 | UNIT | ||
---|---|---|---|---|
D (SOIC) |
PW (TSSOP) |
|||
14 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 83.8 | 120.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 70.7 | 34.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 59.5 | 62.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 11.6 | 1.0 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.7 | 56.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
OFFSET VOLTAGE | ||||||
VOS | Input offset voltage(2) | VS = 5 V | 2 | 15 | µV | |
dVOS/dT | VOS vs temperature | TA = –40°C to +125°C | 0.02 | µV/°C | ||
PSRR | VOS vs power supply | VS = 1.8 V to 5.5 V | 1 | 8 | µV/V | |
Long-term stability(1) | 1(1) | µV | ||||
Channel separation, dc | 0.1 | µV/V | ||||
INPUT BIAS CURRENT | ||||||
IB | Input bias current | ±70 | pA | |||
Input bias current over temperature | TA = –40°C to +125°C | ±150 | pA | |||
IOS | Input offset current | ±140 | pA | |||
NOISE | ||||||
en | Input voltage noise density | f = 1 kHz | 55 | nV/√Hz | ||
Input voltage noise | f = 0.01 Hz to 1 Hz | 0.3 | µVPP | |||
f = 0.1 Hz to 10 Hz | 1.1 | |||||
in | Input current noise | f = 10 Hz | 100 | fA/√Hz | ||
INPUT VOLTAGE RANGE | ||||||
VCM | Common-mode voltage range | (V–) – 0.1 | (V+) + 0.1 | V | ||
CMRR | Common-mode rejection ratio | (V–) – 0.1 V < VCM < (V+) + 0.1 V | 102 | 115 | dB | |
INPUT CAPACITANCE | ||||||
Differential | 2 | pF | ||||
Common-mode | 4 | |||||
OPEN-LOOP GAIN | ||||||
AOL | Open-loop voltage gain | (V–) + 0.1 V< VO < (V+) – 0.1 V | 102 | 130 | dB | |
FREQUENCY RESPONSE | ||||||
GBW | Gain-bandwidth product | CL = 100 pF | 350 | kHz | ||
SR | Slew rate | G = 1 | 0.16 | V/µs | ||
OUTPUT | ||||||
Voltage output swing from rail | TA = –40°C to +125°C | 30 | 70 | mV | ||
ISC | Short-circuit current | ±5 | mA | |||
CL | Capacitive load drive | See Typical Characteristics | ||||
ZO | Open-loop output impedance | f = 350 kHz, IO = 0 mA | 2 | kΩ | ||
POWER SUPPLY | ||||||
VS | Specified voltage range | 1.8 | 5.5 | V | ||
IQ | Quiescent current per amplifier | IO = 0 mA, TA = –40°C to +125°C | 17 | 28 | µA | |
Turn-on time | VS = 5 V | 100 | µs | |||
TEMPERATURE RANGE | ||||||
Specified range | –40 | 125 | °C | |||
Operating range | –40 | 150 | °C | |||
Storage range | –65 | 150 | °C |
G = 1, RL = 10 kΩ |
4-V step |
G = 1, RL = 10 kΩ |