SBOS785B April   2016  – August 2017 TLV2379 , TLV379 , TLV4379

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: TLV379
    5. 7.5 Thermal Information: TLV2379
    6. 7.6 Thermal Information: TLV4379
    7. 7.7 Electrical Characteristics: VS = 1.8 V to 5.5 V
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Rail-to-Rail Input
      3. 8.3.3 Rail-to-Rail Output
      4. 8.3.4 Capacitive Load and Stability
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
    1. 10.1 Input and ESD Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply, VS = (V+) – (V–) 7 V
Signal input pin(2) (V–) – 0.5 (V+) + 0.5
Current Signal input pin(2) ±10 mA
Output short-circuit(3) Continuous
Temperature Operating, TA –40 125 °C
Junction, TJ 150
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current-limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VS Supply voltage Single supply 1.8 5.5 V
Dual supply ±0.9 ±2.75
TA Operating temperature –40 125 °C

7.4 Thermal Information: TLV379

THERMAL METRIC(1) TLV379 UNIT
DCK (SC70) DBV (SOT23) D (SOIC)
5 PINS 5 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 262.2 220.8 130.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 99.7 148.3 77.2 °C/W
RθJB Junction-to-board thermal resistance 49.0 48.2 71.1 °C/W
ψJT Junction-to-top characterization parameter 3.3 28.6 30.7 °C/W
ψJB Junction-to-board characterization parameter 18.2 47.3 70.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Thermal Information: TLV2379

THERMAL METRIC(1) TLV2379 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 116.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 59.5 °C/W
RθJB Junction-to-board thermal resistance 57.6 °C/W
ψJT Junction-to-top characterization parameter 17.2 °C/W
ψJB Junction-to-board characterization parameter 57.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W

7.6 Thermal Information: TLV4379

THERMAL METRIC(1) TLV4379 UNIT
PW (TSSOP)
14 PINS
RθJA Junction-to-ambient thermal resistance 110.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 35.2 °C/W
RθJB Junction-to-board thermal resistance 53.6 °C/W
ψJT Junction-to-top characterization parameter 2.6 °C/W
ψJB Junction-to-board characterization parameter 52.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W

7.7 Electrical Characteristics: VS = 1.8 V to 5.5 V

at TA = 25°C, RL = 25 kΩ connected to VS / 2, and VCM < (V+) – 1 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VS = 5 V 0.8 2.5 mV
dVOS/dT VOS drift TA = –40°C to +125°C 3 μV/°C
PSRR Power-supply rejection ratio 92 104 dB
INPUT VOLTAGE RANGE
VCM Common-mode voltage range (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio(1) (V–) < VCM < (V+) – 1 V 85 100 dB
TA = –40°C to +125°C,
(V–) < VCM < (V+) – 1 V		 62
INPUT BIAS CURRENT
IIB Input bias current VS = 5 V, VCM ≤ VS / 2 ±5 pA
IIO Input offset current VS = 5 V ±5 pA
INPUT IMPEDANCE
Differential 1013 || 3 Ω || pF
Common-mode 1013 || 6 Ω || pF
NOISE
Input voltage noise f = 0.1 Hz to 10 Hz 2.8 μVPP
en Input voltage noise density f = 1 kHz 83 nV/√Hz
OPEN-LOOP GAIN
AOL Open-loop voltage gain VS = 5 V, RL = 5 kΩ,
500 mV < VO < (V+) – 500 mV		 90 110 dB
OUTPUT
Voltage output swing from rail RL = 5 kΩ 25 50 mV
TA = –40°C to +125°C, RL = 5 kΩ 75
ISC Short-circuit current ±5 mA
CLOAD Capacitive load drive See Capacitive Load and Stability section
ROUT Closed-loop output impedance G = 1, f = 1 kHz, IO = 0 10 Ω
RO Open-loop output impedance f = 100 kHz, IO = 0 28 kΩ
FREQUENCY RESPONSE (CLOAD = 30 pF)
GBW Gain bandwidth product 90 kHz
SR Slew rate G = 1 0.03 V/μs
Overload recovery time VIN × Gain > VS 25 μs
tON Turn-on time 1 ms
POWER SUPPLY
VS Specified, operating voltage range 1.8 5.5 V
IQ Quiescent current per amplifier VS = 5 V, TA = –40°C to +125°C 4 12 μA
TEMPERATURE
TA Specified, operating range –40 125 °C
Tstg Storage range –65 150 °C
(1) See typical characteristic graph, Common-Mode Rejection Ratio vs Frequency (Figure 2).

7.8 Typical Characteristics

at TA = 25°C, VS = 5 V, and RL = 25 kΩ connected to VS / 2 (unless otherwise noted)
TLV379 TLV2379 TLV4379 tc_oloop_g_ph-frq_bos347.gif
Figure 1. Open-Loop Gain and Phase vs Frequency
TLV379 TLV2379 TLV4379 tc_max_vo-frq_sbos785.gif
Figure 3. Maximum Output Voltage vs Frequency
TLV379 TLV2379 TLV4379 tc_isc-vs_sbos785.gif
Figure 5. Short-Circuit Current vs Supply Voltage
TLV379 TLV2379 TLV4379 tc_vo-vcm-tmp_sbos785.gif
Figure 7. Offset Voltage vs Common-Mode Voltage
and Temperature
TLV379 TLV2379 TLV4379 tc_noise_bos347.gif
Figure 9. 0.1-Hz to 10-Hz Noise
TLV379 TLV2379 TLV4379 tc_sm_oshoot-cload_bos347.gif
Figure 11. Small-Signal Overshoot vs Capacitive Load
TLV379 TLV2379 TLV4379 tc_lg_step_resp_bos347.gif
Figure 13. Large-Signal Step Response
TLV379 TLV2379 TLV4379 tc_cmr_psr-frq_bos347.gif
Figure 2. Common-Mode and Power-Supply Rejection Ratio vs Frequency
TLV379 TLV2379 TLV4379 tc_vo-io_sbos785.gif
VS = ±2.5 V
Figure 4. Output Voltage vs Output Current
TLV379 TLV2379 TLV4379 tc_histo_vo_bos347.gif
Figure 6. Offset Voltage Production Distribution
TLV379 TLV2379 TLV4379 tc_ibias-tmp_bos347.gif
Figure 8. Input Bias Current vs Temperature
TLV379 TLV2379 TLV4379 tc_noise-frq_bos347.gif
Figure 10. Noise vs Frequency
TLV379 TLV2379 TLV4379 tc_sm_step_resp_bos347.gif
Figure 12. Small-Signal Step Response