SBOS533B September   2010  – October 2015 TLV3501A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Related Products
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Input Overvoltage Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Adding External Hysteresis
    2. 9.2 Typical Application
      1. 9.2.1 Relaxation Oscillator
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 High-Speed Window Comparator
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage 5.5 V
Signal input terminal voltage(2) (V−) − 0.3 (V+) + 0.3 V
Signal input terminal current(2) 10 mA
Output short-circuit current(3) 74 mA
Thermal impedance, junction to free air 200 °C/W
Operating temperature –40 125 °C
Junction temperature 150 °C
Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less.
(3) Short circuit to ground, one comparator per package.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All pins ±500
Corner pins (1, 3, 4, and 6) ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VS Supply voltage 2.2 2.7 5.5 V
VIL Low-level input voltage, SHDN (comparator is enabled)(1) (V+) – 1.7 V
VIH High-level input voltage, SHDN (comparator is disabled)(1) (V+) – 0.9 V
TA Operating temperature –40 125 °C
(1) When the SHDN pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

7.4 Thermal Information

THERMAL METRIC(1) TLV3501A-Q1 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 192.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 134.8 °C/W
RθJB Junction-to-board thermal resistance 37.1 °C/W
ψJT Junction-to-top characterization parameter 28.3 °C/W
ψJB Junction-to-board characterization parameter 36.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

TA = 25°C and VS = 2.7 V to 5.5 V (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage(1) VCM = 0 V, IO = 0 mA ±1 ±6.5 mV
dVOS/dT Input offset voltage(1) vs temperature TA = −40°C to +125°C ±5 μV/°C
PSRR Input offset voltage(1) vs power supply 100 400 μV/V
Input hysteresis 6 mV
INPUT BIAS CURRENT
IB Input bias current(2) VCM = VCC / 2, ΔVIN= ±5.5 V ±2 ±10 pA
IOS Input offset current(2)(3) VCM = VCC / 2ΔVIN= ±5.5 V ±2 ±10 pA
INPUT VOLTAGE RANGE
VCM Common-mode voltage range (V–) – 0.2 V (V+) + 0.2 V V
CMRR Common-mode rejection VCM = −0.2 V to (V+) + 0.2 V TA = 25°C 57 70 dB
TA = −40°C to +125°C 55 dB
INPUT IMPEDANCE
Common-mode 1013 || 2 Ω || pF
Differential 1013 || 4 Ω || pF
OUTPUT
VOH, VOL Voltage output swing from rail IOUT = ±1 mA 30 50 mV
SHUTDOWN
tOFF Shutdown turnoff time 30 ns
tON Shutdown turnon time 100 ns
VH SHDN high threshold Comparator is enabled(7) (V+) − 1.7 V
VL SHDN low threshold Comparator is disabled(7) (V+) − 0.9 V
Input bias current of the SHDN pin 2 pA
IQSD Quiescent current in shutdown 2 μA
POWER SUPPLY
VS Specified voltage 2.7 5.5 V
Operating voltage range 2.2 to 5.5 V
IQ Quiescent current VS = 5 V, VO = High 3.2 5 mA
TEMPERATURE RANGE
Specified temperature –40 125 °C
Operating temperature –40 125 °C
Storage temperature –65 150 °C
RθJA Thermal resistance, SOT23-6 package 200 °C/W
(1) VOS is defined as the average of the positive and the negative switching thresholds.
(2) Not production tested.
(3) The difference between IB+ and IB−.
(4) Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by characterization at 100-mV overdrive.
(5) The difference between the propagation delay going high and the propagation delay going low.
(6) Measured between 10% of VS and 90% of VS.
(7) When the shutdown pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

7.6 Switching Characteristics

TA = 25°C and VS = 2.7 V to 5.5 V (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
T(pd) Propagation delay time(2)(4) ΔVIN = 100 mV, Overdrive = 20 mV TA = 25°C 4.5 6.4 ns
TA = −40°C to +125°C 7 ns
ΔVIN = 100 mV, Overdrive = 5 mV TA = 25°C 7.5 10 ns
TA = −40°C to +125°C 12 ns
Δt(SKEW) Propagation delay skew(5) ΔVIN = 100 mV, Overdrive = 20 mV 0.5 ns
fMAX Maximum toggle frequency Overdrive = 50 mV, VS = 5 V 80 MHz
tR Rise time(6) 1.5 ns
tF Fall time(6) 1.5 ns

7.7 Typical Characteristics

At TA = 25°C, VS = 5 V, and input overdrive = 100 mV (unless otherwise noted).
TLV3501A-Q1 tc_output_response_ovrdrv_rise_bos533.gif
Figure 1. Output Response for Various Overdrive Voltages (Rising)
TLV3501A-Q1 tc_output_response_ovrdrv_fall_bos533.gif
Figure 2. Output Response For Various Overdrive Voltages (Falling)

TLV3501A-Q1 tc_prop_delay_temp_20mv_bos533.gif
VOD = 20 mV
Figure 3. Propagation Delay vs Temperature
TLV3501A-Q1 tc_prop_delay_cap_load_20mv_bos533.gif
VOD = 20 mV
Figure 5. Propagation Delay vs Capacitive Load
TLV3501A-Q1 tc_prop_delay_vsup_bos533.gif
VCM = 1 V VOD = 20 mV
Figure 7. Propagation Delay vs Supply Voltage
TLV3501A-Q1 tc_response_50_sinewave_bos533.gif
VDD = 5 V VIN = 20 mVPP
Figure 9. Response to 50-MHz Sine Wave
TLV3501A-Q1 tc_iq_vsupply_bos533.gif
Figure 11. Quiescent Current vs Supply Voltage
TLV3501A-Q1 tc_iq_vshutdown_bos533.gif
Figure 13. Quiescent Current vs Shutdown Voltage
TLV3501A-Q1 tc_prop_delay_temp_50mv_bos533.gif
VOD = 50 mV
Figure 4. Propagation Delay vs Temperature
TLV3501A-Q1 tc_prop_delay_cap_load_50mv_bos533.gif
VOD = 50 mV
Figure 6. Propagation Delay vs Capacitive Load
TLV3501A-Q1 tc_wakeup_delay_temp_bos533.gif
Figure 8. Wake-Up Delay vs Temperature
TLV3501A-Q1 tc_response_100_sinewave_bos533.gif
±2.5-V Dual Supply into 50-Ω Oscilloscope Input
Figure 10. Response to 100-MHz Sine Wave
TLV3501A-Q1 tc_iq_temp_bos533.gif
Figure 12. Quiescent Current vs Temperature
TLV3501A-Q1 tc_iq_fqcy_bos533.gif
Figure 14. Quiescent Current vs Frequency