The TLV3541, TLV3542 and TLV3544 are single-, dual-, and quad-channel, low-power (5.2-mA per channel), high-speed, unity-gain stable, rail-to-rail input/output operational amplifiers (op amps) designed for video and other applications that require wide bandwidth.
Consuming only 6.5 mA (maximum) of supply current, these devices feature 200-MHz gain-bandwidth product, 150-V/μs slew rate, and a low 7.5 nV/√Hz of input noise at f = 1 MHz. The combination of high bandwidth, high slew rate, and low noise make the TLV354x family suitable for low voltage, high-speed signal conditioning systems.
The TLV354x series of op amps are optimized for operation on single or dual supplies as low as 2.5 V (±1.25 V) and up to 5.5 V (±2.75 V). Common-mode input range extends beyond the supplies. The output swing is within 100 mV of the rails, and supports a wide dynamic range.
The TLV354x devices are specified from –40°C to +125°C. The TLV354x family can be used as a plug-in replacement for many commercially available wide bandwidth op amps.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TLV3541 | SOIC (8) | 3.91 mm × 4.90 mm |
SOT-23 (5) | 2.90 mm × 1.60 mm | |
TLV3542 | SOIC (8) | 3.91 mm × 4.90 mm |
VSSOP (8) | 3.00 mm × 3.00 mm | |
TLV3544 | SOIC (14) | 8.65 mm × 3.91 mm |
TSSOP (14) | 5.00 mm × 4.40 mm |
DATE | REVISION | NOTES |
---|---|---|
October 2016 | * | Initial release. |
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | DBV (SOT-23) | D (SOIC) | ||
–IN | 4 | 2 | I | Inverting input |
+IN | 3 | 3 | I | Noninverting input |
NC | — | 1, 5, 8 | — | No internal connection (can be left floating) |
OUT | 1 | 6 | O | Output |
V– | 2 | 4 | — | Negative (lowest) supply |
V+ | 5 | 7 | — | Positive (highest) supply |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
–IN A | 2 | I | Inverting input, channel A |
+IN A | 3 | I | Noninverting input, channel A |
–IN B | 6 | I | Inverting input, channel B |
+IN B | 5 | I | Noninverting input, channel B |
OUT A | 1 | O | Output, channel A |
OUT B | 7 | O | Output, channel B |
V– | 4 | — | Negative (lowest) supply |
V+ | 8 | — | Positive (highest) supply |
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | TLV3544 | |||
D (SOIC) | PW (TSSOP) | |||
–IN A | 2 | 2 | I | Inverting input, channel A |
–IN B | 6 | 6 | I | Inverting input, channel B |
–IN C | 9 | 9 | I | Inverting input, channel C |
–IN D | 13 | 13 | I | Inverting input, channel D |
+IN A | 3 | 3 | I | Noninverting input, channel A |
+IN B | 5 | 5 | I | Noninverting input, channel B |
+IN C | 10 | 10 | I | Noninverting input, channel C |
+IN D | 12 | 12 | I | Noninverting input, channel D |
OUT A | 1 | 1 | O | Output, channel A |
OUT B | 7 | 7 | O | Output, channel B |
OUT C | 8 | 8 | O | Output, channel C |
OUT D | 14 | 14 | O | Output, channel D |
V– | 11 | 11 | — | Negative (lowest) supply |
V+ | 4 | 4 | — | Positive (highest) supply |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | Supply voltage, V+ to V− | 7.5 | V | |
Signal input terminals(2) | (V–) – (0.5) | (V+) + 0.5 | V | |
Current | Signal input terminals(2) | –10 | 10 | mA |
Output short circuit(3) | Continuous | |||
Temperature | Operating, TA | –55 | 150 | °C |
Junction, TJ | –65 | 150 | °C | |
Storage, Tstg | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | 1000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | 250 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VS | Supply voltage, V– to V+ | 2.5 | 5.5 | V | |
Specified temperature range | –40 | 125 | °C |
THERMAL METRIC(1) | TLV3541 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DBV (SOT-23) | |||
8 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 123.8 | 216.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 68.7 | 84.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 64.5 | 43.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 23.0 | 3.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 64.0 | 42.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
THERMAL METRIC(1) | TLV3542 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DGK (VSSOP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 113.9 | 175.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 60.4 | 67.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 54.1 | 97.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 17.1 | 9.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 53.6 | 95.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
THERMAL METRIC(1) | TLV3544 | UNIT | ||
---|---|---|---|---|
D (SOIC) | PW (TSSOP) | |||
14 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 83.8 | 92.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 70.7 | 27.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 59.5 | 33.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 11.6 | 1.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.7 | 33.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | |||||||
VOS | Input offset voltage | VS = 5 V, at TA = 25°C | ±2 | ±10 | mV | ||
dVOS/dT | Input offset voltage vs temperature | VS = 5 V, at TA = −40°C to +125°C | ±4.5 | μV/°C | |||
PSRR | Input offset voltage vs power supply | VS = 2.7 V to 5.5 V, VCM = (VS / 2) − 0.55 V |
60 | 70 | dB | ||
INPUT BIAS CURRENT | |||||||
IB | Input bias current | 3 | pA | ||||
IOS | Input offset current | ±1 | pA | ||||
NOISE | |||||||
en | Input voltage noise density | f = 1 MHz | 7.5 | nV/√Hz | |||
in | Current noise density | f = 1 MHz | 50 | fA/√Hz | |||
INPUT VOLTAGE RANGE | |||||||
VCM | Common-mode voltage range | (V−) − 0.1 | (V+) + 0.1 | V | |||
CMRR | Common-mode rejection ratio | VS = 5.5 V, –0.1 V < VCM < 3.5 V, at TA = 25°C |
66 | 80 | dB | ||
VS = 5.5 V, –0.1 V < VCM < 5.6 V, at TA = 25°C |
56 | 68 | dB | ||||
INPUT IMPEDANCE | |||||||
Differential | 1013 || 2 | Ω || pF | |||||
Common-mode | 1013 || 2 | Ω || pF | |||||
OPEN-LOOP GAIN | |||||||
AOL | Open-loop gain | VS = 5 V, 0.3 V < VO < 4.7 V, at TA = 25°C |
92 | 108 | dB | ||
FREQUENCY RESPONSE | |||||||
f−3dB | Small-signal bandwidth | At G = +1, VO = 10 mV RF = 25 Ω |
200 | MHz | |||
At G = +2, VO = 10 mV | 90 | MHz | |||||
GBW | Gain-bandwidth product | G = +10 | 100 | MHz | |||
f0.1dB | Bandwidth for 0.1-dB gain flatness | At G = +2, VO = 10 mV | 40 | MHz | |||
SR | Slew rate | VS = 5 V, G = +1, 4-V step | 150 | V / μs | |||
VS = 5 V, G = +1, 2-V step | 130 | V / μs | |||||
Rise-and-fall time | At G = +1, VO = 200 mVPP, 10% to 90% |
2 | ns | ||||
At G = +1, VO = 2 VPP, 10% to 90% | 11 | ns | |||||
Settling time | 0.1%, VS = 5 V, G = +1, 2-V output step |
30 | ns | ||||
0.01%, VS = 5 V, G = +1, 2-V output step |
60 | ns | |||||
Overload recovery time | VIN × Gain = VS | 5 | ns | ||||
FREQUENCY RESPONSE, continued | |||||||
Harmonic distortion | Second harmonic | At G = +1, f = 1 MHz, VO = 2 VPP, RL = 200 Ω, VCM = 1.5 V |
–75 | dBc | |||
Third harmonic | At G = +1, f = 1 MHz, VO = 2 VPP, RL = 200 Ω, VCM = 1.5 V |
–83 | dBc | ||||
Differential gain error | NTSC, RL = 150 Ω | 0.02% | |||||
Differential phase error | NTSC, RL = 150 Ω | 0.09 | ° | ||||
Channel-to-channel crosstalk | TLV3542 | f = 5 MHz | –100 | dB | |||
TLV3544 | –84 | dB | |||||
OUTPUT | |||||||
Voltage output swing from rail | VS = 5 V, RL = 1 kΩ at TA = 25°C | 0.1 | 0.3 | V | |||
IO | Output current, single, dual, quad(1)(2) | VS = 5 V | 100 | mA | |||
VS = 3 V | 50 | mA | |||||
Closed-loop output impedance | f < 100 kHz | 0.05 | Ω | ||||
RO | Open-loop output resistance | 35 | Ω | ||||
POWER SUPPLY | |||||||
VS | Specified voltage range | 2.7 | 5.5 | V | |||
Operating voltage range | 2.5 | 5.5 | V | ||||
IQ | Quiescent current (per amplifier) | At TA = 25°C, VS = 5 V, IO = 0 |
5.2 | 6.5 | mA | ||
TEMPERATURE RANGE | |||||||
Specified range | –40 | 125 | °C | ||||
Operating range (3) | –55 | 150 | °C | ||||
Storage range | –65 | 150 | °C | ||||
THERMAL SHUTDOWN | |||||||
Shutdown temperature | 160 | °C | |||||
Reset from shutdown | 140 | °C |
RF = 604 Ω | VO = 10 mVpp |
G = +1, RF = 0 Ω | VO = 10 mVpp | CL = 0 pF |
G = +1, RS = 0 Ω | VO = 10 mVpp |
G = +1, VO = 10 mVpp | ||