SBOSAA8C December   2022  – August 2024 TLV2365 , TLV365

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Rail-to-Rail Input
      2. 7.3.2 Input and ESD Protection
      3. 7.3.3 Driving Capacitive Loads
      4. 7.3.4 Active Filter
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Overdrive Recovery Performance
      2. 8.1.2 Achieving an Output Level of Zero Volts
    2. 8.2 Typical Applications
      1. 8.2.1 Second-Order Low-Pass Filter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 ADC Driver and Reference Buffer
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
        2. 9.1.1.2 TINA-TI™ Simulation Software (Free Download)
        3. 9.1.1.3 DIP-Adapter-EVM
        4. 9.1.1.4 DIYAMP-EVM
        5. 9.1.1.5 TI Reference Designs
        6. 9.1.1.6 Analog Filter Designer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.1 Layout Guidelines

For best operational performance of the device, use good printed circuit board (PCB) layout practices, including the following guidelines:

  • Noise can propagate into analog circuitry through the power pins of the circuit as a whole or through the operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power sources local to the analog circuitry.
    • Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-supply applications.
    • The TLVx365 is capable of peak output current (in excess of 50 mA). Applications with low impedance loads or capacitive loads with fast transient signals demand large currents from the power supplies. Larger bypass capacitors, such as 1-µF solid tantalum capacitors, can improve dynamic performance in these applications.
  • Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital and analog grounds paying attention to the flow of the ground current.
  • To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much better as opposed to in parallel with the noisy trace.
  • Place the external components as close to the device as possible. Figure 8-8 shows that keeping RF and RG close to the inverting input minimizes parasitic capacitance.
  • Keep the length of input traces as short as possible. Always remember that the input traces are the most sensitive part of the circuit.
  • Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce leakage currents from nearby traces that are at different potentials.