The TLV522 500 nA dual, nanopower op amp offers optimum price performance in TI's nanopower family of operational amplifiers. The TLV522 provides 8 kHz of gain bandwidth from 500 nA of quiescent current, making it well suited for battery powered applications found in building automation and remote sensing nodes. Its CMOS input stage enables very low IBIAS, reducing errors commonly introduced in Megaohm feedback resistance topologies such as high-impedance photodiode and charge sense applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources like mobile phones, WiFi, radio transmitters and RFID readers.
The TLV522 is offered in the 8-pin VSSOP (MSOP) package, and operates from –40°C to 125°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TLV522 | VSSOP (8) | 3.00 mm x 3.00 mm |
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DATE | REVISION | NOTES |
---|---|---|
May 2016 | * | Initial release. |
PIN | I/O | DESCRIPTION | |||
---|---|---|---|---|---|
PIN | NAME | ||||
1 | OUT A | O | Channel A Output | ||
2 | –IN A | I | Channel A Inverting Input | ||
3 | +IN A | I | Channel A Non-Inverting Input | ||
4 | V– | P | Negative (lowest) power supply | ||
5 | +IN B | I | Channel B Non-Inverting Input | ||
6 | –IN B | I | Channel B Inverting Input | ||
7 | OUT B | O | Channel B Output | ||
8 | V+ | P | Positive (highest) power supply |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, V+ to V– | -0.3 | 6 | V | |
Signal input pins | Voltage(2) | V- – 0.3 | V+ + 0.3 | V |
Current(2) | –10 | 10 | mA | |
Output short current | Continuous(4) | |||
Junction temperature | –40 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) |
±250 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Supply Voltage ( V+– V− ) | 1.7 | 5.5 | V | ||
Specified Temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TLV522 | UNIT | ||
---|---|---|---|---|
DGK (VSSOP) | ||||
8 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 182.5 | °C/W | |
RθJC(top) | Junction-to-case (top) thermal resistance | 73.6 | ||
RθJB | Junction-to-board thermal resistance | 104.1 | ||
ψJT | Junction-to-top characterization parameter | 13.7 | ||
ψJB | Junction-to-board characterization parameter | 102.5 | ||
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | ||||||||
Input offset voltage (VOS) | VCM = 0.3 V | –4 | ±1 | 4 | mV | |||
VCM = 3 V | –4 | ±1 | 4 | |||||
Drift (dVOS/dT) | 1.5 | µV/°C | ||||||
Power-Supply Rejection Ratio (PSRR) | V+ = 1.8 V to 3.3 V, VCM = 0.3 V | 80 | 109 | dB | ||||
INPUT VOLTAGE RANGE | ||||||||
Common-Mode voltage range (VCM) | CMRR ≥ 62 dB | 0 | 3.3 | V | ||||
Common-Mode Rejection Ratio (CMRR) | 0 V < VCM < 3.3 V | 62 | 90 | dB | ||||
0 V < VCM < 2.2V | 90 | |||||||
INPUT BIAS CURRENT | ||||||||
Input bias current (IBIAS) | ±1 | pA | ||||||
Input offset current (IOS) | ±0.1 | |||||||
INPUT IMPEDANCE | ||||||||
Differential | 1013 || 2.5 | Ω || pF | ||||||
Common mode | 1013 || 2.5 | |||||||
NOISE | ||||||||
Input voltage noise density, f = 1 kHz (en) | 300 | nV/√Hz | ||||||
Current noise density, f = 1 kHz (in) | 65 | fA√Hz | ||||||
OPEN-LOOP GAIN | ||||||||
Open-loop voltage gain (AOL) | V+ = 5 V RL = 100 kΩ to V+/2, 0.5 V < VO < 4.5 V |
91 | 101 | dB | ||||
OUTPUT | ||||||||
Voltage output swing from positive rail | V+ = 1.8 V, RL = 100 kΩ to V+/2 | 3 | 20 | mV | ||||
Voltage output swing from negative rail | V+ = 1.8 V, RL = 100 kΩ to V+/2 | 2 | 20 | |||||
Output current sourcing | Sourcing, V+ = 1.8 V VO to V–, VIN(diff) = 100 mV |
1 | 3 | mA | ||||
Output current sinking | Sinking, V+ = 1.8 V VO to V+, VIN(diff) = –100 mV |
1 | 5 | |||||
FREQUENCY RESPONSE | ||||||||
Gain-bandwidth product (GBWP) | CL = 20 pF | 8 | kHz | |||||
Slew rate (SR) | G = +1, Rising edge, 1Vp-p, CL = 20 pF | 3.6 | V/ms | |||||
G = +1, Falling edge, 1Vp-p, CL = 20 pF | 3.7 | |||||||
POWER SUPPLY | ||||||||
Quiescent current per channel (IQ) | VCM = 0.3 V, IO = 0 | 500 | 800 | nA |
No Output Load | VCM = 0.3 V |
No Output Load |
VS = 3.3 V |
Ouput set low (sinking), shorted to V+ |
VS = 3.3 V | TA = 85°C |
VS = 5 V | RL = 100 kΩ | CL = 20 pF |
VS = ±0.9 V | RL = 10 MΩ | CL = 20 pF |
G = +1 | VIN = ±500mV |
VS = ±2.5 V | RL = 10 MΩ | CL = 20 pF |
G = +1 | VIN = ±1V |
VS = 5 V | RL = 100 kΩ | CL = 20 pF |
VS = 5 V | RL = 1 MΩ | CL = 20 pF |
VS = 5 V | RL = 10 MΩ | CL = 20 pF |
No Output Load | VCM = (V+) – 0.3 V |
VS = 3.3 V |
Output set high (sourcing), shorted to V– |
VS = 3.3 V | TA = 25°C |
VS = 3.3 V | TA = 125°C |
VS = ±0.9 V | RL = 10 MΩ | CL = 20 pF |
G = +1 | VIN = ±100 mV |
VS = ±2.5 V | RL = 10 MΩ | CL = 20 pF |
G = +1 | VIN = ±100 mV |
VS = 1.8 V | RL = 100 kΩ | CL = 20 pF |
VS = 1.8 V | RL = 1 MΩ | CL = 20 pF |
VS = 1.8 V | RL = 10 MΩ | CL = 20 pF |