SLVSB53A May 2012 – December 2014 TLV61220
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input voltage on VBAT, SW, VOUT, EN, FB | –0.3 | 7.5 | V |
TJ | Operating junction temperature | –40 | 150 | °C |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Supply voltage at VIN | 0.7 | 5.5 | V | |
TA | Operating free air temperature range | –40 | 85 | °C | |
TJ | Operating virtual junction temperature range | –40 | 125 | °C |
THERMAL METRIC(1) | TLV61220 | UNIT | |
---|---|---|---|
DBV | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 185.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 124.3 | |
RθJB | Junction-to-board thermal resistance | 31.3 | |
ψJT | Junction-to-top characterization parameter | 22.9 | |
ψJB | Junction-to-board characterization parameter | 30.8 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
DC/DC STAGE | |||||||
VIN | Input voltage range | 0.7 | 5.5 | V | |||
VIN | Minimum input voltage at startup | RLoad ≥ 150 Ω | 0.7 | V | |||
VOUT | TLV61220 output voltage range | VIN < VOUT | 1.8 | 5.5 | V | ||
VFB | TLV61220 feedback voltage | 483 | 500 | 513 | mV | ||
ILH | Inductor current ripple | 200 | mA | ||||
ISW | switch current limit | VOUT = 3.3 V, VIN = 1.2 V, TA = 25 °C | 220 | 400 | mA | ||
VOUT = 3.3 V, TA = -40°C to 85 °C | 180 | 400 | mA | ||||
VOUT = 3.3 V, TA = 0°C to 85 °C | 200 | 400 | mA | ||||
RDS(on) | Rectifying switch on resistance, HSD | VOUT = 3.3 V | 1000 | mΩ | |||
VOUT = 5 V | 700 | mΩ | |||||
Main switch on resistance, LSD | VOUT = 3.3 V | 600 | mΩ | ||||
VOUT = 5 V | 550 | mΩ | |||||
Line regulation | VIN < VOUT | 0.5% | |||||
Load regulation | VIN < VOUT | 0.5% | |||||
IQ | Quiescent current | VIN | IO = 0 mA, VEN = VIN = 1.2 V, VOUT = 3.3 V |
0.5 | 0.9 | μA | |
VOUT | 5 | 7.5 | μA | ||||
ISD | Shutdown current | VIN | VEN = 0 V, VIN = 1.2 V, VOUT ≥ VIN | 0.2 | 0.5 | μA | |
ILKG | Leakage current into VOUT | VEN = 0 V, VIN = 1.2 V, VOUT = 3.3 V | 1 | μA | |||
Leakage current into SW | VEN = 0 V, VIN = 1.2 V, VSW = 1.2 V, VOUT ≥ VIN | 0.01 | 0.2 | μA | |||
IFB | TLV61220 Feedback input current | VFB = 0.5 V | 0.01 | μA | |||
IEN | EN input current | Clamped on GND or VIN (VIN < 1.5 V) | 0.005 | 0.1 | μA | ||
CONTROL STAGE | |||||||
VIL | EN input low voltage | VIN ≤ 1.5 V | 0.2 × VIN | V | |||
VIH | EN input high voltage | VIN ≤ 1.5 V | 0.8 × VIN | V | |||
VIL | EN input low voltage | 5 V > VIN > 1.5 V | 0.4 | V | |||
VIH | EN input high voltage | 5 V > VIN > 1.5 V | 1.2 | V | |||
VUVLO | Undervoltage lockout threshold for turn off | VIN decreasing | 0.5 | 0.7 | V | ||
Overvoltage protection threshold | 5.5 | 7.5 | V | ||||
Overtemperature protection | 140 | °C | |||||
Overtemperature hysteresis | 20 | °C |
FIGURE | ||
---|---|---|
Output Current | Input Voltage, ISW = 330 mA, Minimum ISW= 200 mA, VO = 1.8V | Figure 1 |
Input Voltage, ISW = 400 mA, Minimum ISW = 200 mA, VO = 3.3V | Figure 2 | |
Input Voltage, ISW = 380 mA, Minimum ISW = 200 mA, VO = 5V | Figure 3 | |
Efficiency | vs Output Current, VO = 1.8 V, VI = [0.7 V; 1.2 V; 1.5 V] | Figure 4 |
vs Output Current, VO = 3.3 V, VI = [0.7 V; 1.2 V; 2.4V; 3V] | Figure 5 | |
vs Output Current, VO = 5 V, VI = [0.7 V; 1.2 V; 3.6V; 4.2V] | Figure 6 | |
Efficiency | vs Input Voltage, VO = 1.8 V, IO = [100µA; 1mA ; 10mA; 50mA] | Figure 7 |
vs Input Voltage, VO = 3.3 V, IO = [100µA; 1mA ; 10mA; 50mA] | Figure 8 | |
vs Input Voltage, VO = 5 V, IO = [100µA; 1mA ; 10mA; 50mA] | Figure 9 | |
Output Voltage | vs Output Current, VO = 1.8 V, VI = [0.7 V; 1.2 V] | Figure 10 |
vs Output Current, VO = 3.3 V, VI = [0.7 V; 1.2 V; 2.4 V] | Figure 11 |
VO = 1.8 V |
VO = 5 V |
VO = 3.3 V |