SLVSBB9F March   2012  – January 2017 TLV62090

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Softstart (SS) and Hiccup Current Limit During Startup
      3. 7.3.3 Voltage Tracking (SS)
      4. 7.3.4 Short Circuit Protection (Hiccup-Mode)
      5. 7.3.5 Output Discharge Function
      6. 7.3.6 Power Good Output (PG)
      7. 7.3.7 Undervoltage Lockout (UVLO)
      8. 7.3.8 Thermal Shutdown
      9. 7.3.9 Charge Pump (CP, CN)
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Operation
      2. 7.4.2 Power Save Mode Operation
      3. 7.4.3 Low Dropout Operation (100% Duty Cycle)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design with WEBENCH® Tools
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Input and Output Capacitor Selection
        4. 8.2.2.4 Setting the Output Voltage
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guideline
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Custom Design with WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Third-Party Products Disclaimer
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGT|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

VALUE UNIT
MIN MAX
Voltage range(2) PVIN, AVIN, FB, SS, EN, DEF, VOS – 0.3 7 V
SW (DC), PG – 0.3 VIN + 0.3
SW (AC, less than 10 ns)(3) – 3.0 10
CN, CP – 0.3 VIN + 7
Power Good sink current PG 1 mA
Operating junction temperature range, TJ – 40 150 °C
Storage temperature, Tstg – 65 150 °C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) While switching

6.2 ESD Ratings

MAX UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VIN Input voltage range VIN 2.5 5.5 V
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TLV62090 UNITS
VQFN (16 PINS)
RθJA Junction-to-ambient thermal resistance 47 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 60
RθJB Junction-to-board thermal resistance 20
ψJT Junction-to-top characterization parameter 1.5
ψJB Junction-to-board characterization parameter 20
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.3
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

VIN = 3.6V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.5 5.5 V
IQIN Quiescent current Not switching, FB = FB +5%, into PVIN and AVIN 20 µA
Isd Shutdown current Into PVIN and AVIN 0.6 5 µA
VUVLO Undervoltage lockout threshold VIN falling 2.1 2.2 2.3 V
Undervoltage lockout hysteresis 200 mV
TSD Thermal shutdown Temperature rising 150 ºC
Thermal shutdown hysteresis 20 ºC
CONTROL SIGNAL EN
VH High level input voltage VIN = 2.5 V to 5.5 V 1 0.65 V
VL Low level input voltage VIN = 2.5 V to 5.5 V 0.60 0.4 V
Ilkg Input leakage current EN = GND or VIN 10 100 nA
RPD Pull down resistance EN = Low 400 kΩ
SOFTSTART
ISS Softstart current 6.3 7.5 8.7 µA
POWER GOOD
VTH_PG Power good threshold Output voltage rising 93% 95% 97%
Output voltage falling 88% 90% 92%
VL Low level voltage I(sink) = 1 mA 0.4 V
Ilkg Leakage current VPG = 3.6 V 10 100 nA
POWER SWITCH
RDS(on) High side FET on-resistance ISW = 500 mA 50 mΩ
Low side FET on-resistance ISW = 500 mA 40 mΩ
ILIMF High side FET switch current limit 3.7 4.6 5.5 A
fs Switching frequency IOUT = 3 A 1.4 MHz
OUTPUT
VOUT Output voltage range 0.8 VIN V
Rod Output discharge resistor EN = GND, VOUT = 1.8 V 200 Ω
VFB Feedback regulation voltage PWM Mode 0.8 V
VFB Feedback voltage accuracy
VIN ≥ VOUT + 1 V 		IOUT = 1 A, PWM mode, TJ = 25°C -1% +1%
IOUT = 1 A, PWM mode -1.4% +1.4%
IOUT = 0 mA, VOUT ≥ 1.2 V, PFM mode (2) -1.4% +3%
IOUT = 0 mA, VOUT < 1.2 V, PFM mode (1) -1.4% +3.7%
IFB Feedback input bias current VFB = 0.8 V 10 100 nA
Line regulation VOUT = 1.8 V, PWM operation 0.016 %/V
Load regulation VOUT = 1.8 V, PWM operation 0.04 %/A
(1) For output voltages < 1.2 V, use a 2 x 22 µF output capacitance to achieve +3% output voltage accuracy in PFM mode.
(2) Conditions: L = 1 µH, COUT = 22 µF. For more information, see the Power Save Mode Operation section of this data sheet.

6.6 Typical Characteristics

TLV62090 D001_SLVSBB9.gif
Figure 1. High Side FET On-Resistance vs Input Voltage
TLV62090 D033_SLVSBB9_TLV62090.gif
VOUT = 1.8 V L = 1 µH
Figure 3. Switching Frequency vs Load Current
TLV62090 D030_SLVSBB9_TLV62090.gif
VOUT = 1.0 V L = 1 µH
Figure 5. Switching Frequency vs Load Current
TLV62090 D036_SLVSBB9_TLV62090.gif
VOUT = 3.3 V L = 1 µH
Figure 7. Switching Frequency vs Load Current
TLV62090 D004_SLVSBB9.gif
VOUT = 1.8 V L = 1 µH
Figure 2. Quiescent Current vs Input Voltage
TLV62090 D040_SLVSBB9_TLV62090.gif
1.
VOUT = 1.8 V L = 1 µH IOUT = 1 A
Figure 4. Switching Frequency vs Input Voltage
TLV62090 D039_SLVSBB9_TLV62090.gif
1.
VOUT = 1.0 V L = 1 µH IOUT = 1 A
Figure 6. Switching Frequency vs Input Voltage
TLV62090 D041_SLVSBB9_TLV62090.gif
1.
VOUT = 3.3 V L = 1 µH IOUT = 1 A
Figure 8. Switching Frequency vs Input Voltage