SLVSE95B April 2018 – March 2020 TLV62568A , TLV62569A
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
ISD | Shutdown current into VIN pin | EN = 0 V | 0.01 | 2 | µA | |
VUVLO | Under voltage lock out | VIN falling | 2.3 | 2.45 | V | |
under voltage lock out hysteresis | 100 | mV | ||||
TJSD | Thermal shutdown | TJ rising | 150 | °C | ||
TJ falling | 130 | |||||
LOGIC INTERFACE | ||||||
VIH | High-level input voltage at EN pin | 2.5 ≤ VIN ≤ 5.5 | 1.2 | V | ||
VIL | Low-level input voltage at EN pin | 2.5 ≤ VIN ≤ 5.5 | 0.4 | V | ||
tSS | Soft startup time | From EN high to 95% of VOUT nominal | 0.9 | ms | ||
VPG | Power good threshold | VFB rising, referenced to VFB nominal | 95% | |||
VFB falling, referenced to VFB nominal | 90% | |||||
VPG,OL | Low-level output voltage at PG pin | ISINK = 1 mA | 0.4 | V | ||
IPG,LKG | Input leakage current into PG pin | VPG = 5 V | 100 | nA | ||
tPG,DLY | Power good delay time | VFB falling | 40 | µs | ||
OUTPUT | ||||||
VFB | Feedback regulation voltage | 0.588 | 0.6 | 0.612 | V | |
IFB | Input leakage current into FB pin | VFB = 0.6 V | 10 | nA | ||
RDS(on) | High-side FET on resistance | 100 | mΩ | |||
Low-side FET on resistance | 60 | |||||
ILIM | High-side FET current limit | TLV62569A, TLV62569AP | 3 | A | ||
TLV62568A, TLV62568AP | 2 | |||||
fSW | Switching frequency | 1.5 | MHz |