SLUSDR2A December 2020 – January 2023 TLV62595
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
IQ | Quiescent current | EN = High, no load, device not switching | 10 | µA | ||
ISD | Shutdown current | EN = Low, TJ = -40 ℃ to 85 ℃ | 0.05 | µA | ||
VUVLO | Under voltage lock out threshold | VIN falling | 2.1 | 2.2 | 2.3 | V |
Under voltage lock out hysteresis | VIN rising | 160 | mV | |||
TJSD | Thermal shutdown threshold | TJ rising | 150 | °C | ||
Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
LOGIC INTERFACE EN | ||||||
VIH | High-level threshold voltage | VIN = 2.5 V to 5.5 V | 1.0 | V | ||
VIL | Low-level threshold voltage | VIN = 2.5 V to 5.5 V | 0.4 | V | ||
SOFT START, POWER GOOD | ||||||
tSS | Soft start time | Time from EN high to 95% of VOUT nominal | 1.75 | ms | ||
VPG | Power good lower threshold | VPG rising, VFB referenced to VFB nominal | 96 | % | ||
VPG falling, VFB referenced to VFB nominal | 92 | % | ||||
Power good upper threshold | VPG rising, VFB referenced to VFB nominal | 105 | % | |||
VPG falling, VFB referenced to VFB nominal | 110 | % | ||||
VPG,OL | Low-level output voltage | Isink = 1 mA | 0.4 | V | ||
IPG,LKG | Input leakage current into PG pin | VPG = 5.0 V | 0.01 | µA | ||
tPG,DLY | Power good deglitch delay | PG rising edge | 100 | µs | ||
PG falling edge | 20 | |||||
OUTPUT | ||||||
VFB | Feedback regulation voltage | PWM mode, 2.5 V ≤ VIN ≤ 5.5 V, TJ = -40°C to 125°C | 594 | 600 | 606 | mV |
IFB,LKG | Feedback input leakage current for adjustable output voltage | VFB = 0.6 V | 0.01 | µA | ||
IDIS | Output discharge current | VSW = 0.4V; EN = LOW | 400 | mA | ||
Load regulation | IOUT = 0.5 A to 3 A, VOUT = 1.8 V | 0.1 | %/A | |||
POWER SWITCH | ||||||
RDS(on) | High-side FET on-resistance | 26 | mΩ | |||
Low-side FET on-resistance | 25 | mΩ | ||||
ILIM | High-side FET switch current limit, DC | 4.8 | 5.6 | A | ||
fSW | PWM switching frequency | IOUT = 1 A, VOUT = 1.8 V | 2.2 | MHz |