SBVS161A november   2011  – april 2023 TLV701

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Wide Supply Range
      2. 7.3.2 Low Quiescent Current
      3. 7.3.3 Dropout Voltage (VDO)
      4. 7.3.4 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External Capacitor Requirements
        2. 8.2.2.2 Input and Output Capacitor Requirements
        3. 8.2.2.3 Reverse Current
        4. 8.2.2.4 Power Dissipation (PD)
        5. 8.2.2.5 Estimating Junction Temperature
      3. 8.2.3 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
        1. 8.5.1.1 Power Dissipation
      2. 8.5.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Evaluation Module
      2. 9.1.2 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.3 Reverse Current

Excessive reverse current can damage this device. Reverse current flows through the intrinsic body diode of the PMOS pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT ≤ VIN + 0.3 V. These conditions are:

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, external protection is recommended to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated. Limit reverse current to 5% or less of the rated output current of the device in the event this current cannot be avoided.

Figure 8-2 shows one approach for protecting the device.

GUID-20230109-SS0I-QLBG-L8F0-XDCGGXMSBFDD-low.svg Figure 8-2 Example Circuit for Reverse Current Protection Using a Schottky Diode