SNVSAV1A June 2017 – October 2017 TLV760
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
Input voltage (IN to GND) | –0.3 | 35 | V |
Output Voltage (OUT) | VIN + 0.3 | V | |
Output Current | Internally limited(2) | mA | |
Junction temperature | –40 | 150 | °C |
Storage temperature, Tstg | −65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | |
---|---|---|---|
Maximum input voltage (IN to GND) | 30 | V | |
Output current (IOUT) | 100 | mA | |
Input and output capacitor (COUT) | 0.1 | µF | |
Junction temperature, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | TLV760 | UNIT | |
---|---|---|---|
DBZ (SOT-23) | |||
3 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 275.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 92.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 56.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 55.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VOUT | Output voltage accuracy | VIN = VOUT(NOM)+ 1.5 V, 1 mA ≤ IOUT ≤ 100 mA |
–4% | 4% | V | ||
VIN = VOUT(NOM) + 1.5 V, 1 mA ≤ IOUT ≤ 100 mA, −40°C ≤ TJ ≤ 125°C |
–5% | 5% | |||||
ΔV(ΔVIN) | Line regulation | VOUT(NOM) + 1.5 V ≤ VIN ≤ 30 V IOUT = 1 mA , −40°C ≤ TJ ≤ 125°C |
VOUT(NOM) = 3.3 V, 5 V | 10 | 30 | mV | |
VOUT(NOM) = 12 V, 15 V | 14 | 45 | |||||
ΔV(ΔIOUT) | Load regulation | VIN =VOUT(NOM) + 1.5 V , 10 mA ≤ IOUT ≤ 100 mA, −40°C ≤ TJ ≤ 125°C |
VOUT(NOM) = 3.3 V, 5 V | 20 | 45 | mV | |
VOUT(NOM) = 12 V, 15 V | 45 | 80 | |||||
IGND | Ground pin current | VOUT(NOM) + 1.5 V ≤ VIN ≤ 30 V, no load, −40°C ≤ TJ ≤ 125°C |
2 | 5 | mA | ||
VDO | Dropout voltage | IOUT = 10 mA | 0.7 | 0.9 | V | ||
IOUT = 10 mA , −40°C ≤ TJ ≤ 125°C | 1 | ||||||
IOUT = 100 mA | 0.9 | 1.1 | |||||
IOUT = 100 mA, −40°C ≤ TJ ≤ 125°C | 1.2 | ||||||
TSD | Thermal shutdown temperature | 150 | °C |
CIN = 1 µF | COUT = 0.1 µF | VOUT = 3.3 V | ||
VOUT(Red) = 3.3 V | IOUT(Black) = 100 mA |