at operating temperature TJ
= 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is
greater), IOUT = 10 mA, VEN = 2.0 V, CIN = 1.0 µF,
and COUT = 1.0 µF (unless otherwise noted)
Figure 6-1 VOUT Accuracy vs IOUT
Figure 6-3 ISHUTDOWN vs VIN
| IOUT = 0 mA, fixed-voltage version
devices |
Figure 6-5 IQ vs Temperature
Figure 6-7 IGND vs IOUT
| VIN = 5 V, VOUT = 3.3 V,
CFF = 10 pF, ramp rate = 0.4 A/µs |
Figure 6-9 IOUT Transient From 0 mA to 100 mA
Figure 6-11 VDO vs VIN
Figure 6-13 Startup With Separate VEN and VIN
Figure 6-15 VEN Thresholds vs Temperature
Figure 6-17 UVLO
Thresholds vs Temperature
| CFF = 0 nF, IOUT = 0.1 A, RMS
noise BW = 10 Hz to 100 kHz |
Figure 6-19 Output Noise (Vn) vs Frequency and VOUT
Figure 6-21 IPULLDOWN vs VIN
| VOUT = 3.3 V, IOUT = 33
µA |
Figure 6-23 Startup Inrush Current With COUT = 22 µF
Figure 6-2 VOUT Accuracy vs VIN
| IOUT = 0 mA, adjustable-voltage version
devices |
Figure 6-4 IQ vs VIN
Figure 6-6 IGND vs IOUT
Figure 6-8 IQ Increase Below Minimum VIN
| VOUT = 3.3 V, IOUT = 33 µA,
VIN ramp rate = 1.6 V/µs |
Figure 6-10 VIN Transient From 5 V to 16 V
Figure 6-12 VDO vs IOUT
| EN
pulled up internally, VOUT = 0.8 V |
Figure 6-14 Startup With VEN Floating
Figure 6-16 VEN Thresholds vs Temperature
| VOUT = 3.3 V, VIN = 4.8 V,
IOUT = 0.33 A |
Figure 6-18 PSRR
vs Frequency and CFF
Figure 6-20 IEN vs VIN
Figure 6-22 IFB vs Temperature
| VOUT = 3.3 V, IOUT = 33
µA |
Figure 6-24 Startup Inrush Current With COUT = 47 µF