SBVS453 May   2024 TLV770

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Dropout Voltage
      2. 6.3.2 Active Discharge
      3. 6.3.3 Brick-Wall Current Limit
      4. 6.3.4 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Recommended Capacitor Types
      2. 7.1.2 Input and Output Capacitor Requirements
    2. 7.2 Typical Application
      1. 7.2.1 Application
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
      4. 7.2.4 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
  • DQN|4
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

specifications apply for TJ = 25℃, VIN = VOUT(NOM) + 0.5V or 1.4V, whichever is greater, VEN = VIN, IOUT = 1mA, CIN = 1µF, and COUT = 1µF (unless otherwise noted); all typical values are at TJ = 25℃
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ΔVOUT Output voltage tolerance 1.2V ≤ VOUT < 1.8V –2.5 2.5 %
1.8V ≤ VOUT ≤ 3.3V –2 2
TJ = –40℃ to 85℃ 1.2V ≤ VOUT < 1.8V –3 3
1.8V ≤ VOUT < 2.5V –2.75 2.75
2.5V ≤ VOUT ≤ 3.3V –2.5 2.5
ΔVOUT Line regulation VIN = (VOUT(NOM) + 0.5V) to 5.5V 0.01 0.1 %/V
ΔVOUT Load regulation IOUT = 1mA to 50mA 85 110 µV/mA
IGND Quiescent ground current VEN = VIN = 5.5V, IOUT = 0mA, TJ = –40°C to 85°C 80 120 µA
ISHDN Shutdown ground current VEN < VEN(LOW), VIN = 5.5V, TJ = –40°C to 85°C 0.01 2 µA
VDO Dropout voltage
IOUT = 50mA,
VIN = 95% x VOUT(NOM)
 		 1.2V ≤ VOUT < 1.8V(1)(2) 220 mV
1.8V ≤ VOUT < 2.5V 60
2.5V ≤ VOUT ≤ 3.3V 45
IOUT = 50mA,
VIN = 95% x VOUT(NOM),  TJ = –40°C to 85°C		 1.2V ≤ VOUT < 1.8V(1)(2) 230
1.8V ≤ VOUT < 2.5V 65
2.5V ≤ VOUT ≤ 3.3V 50
ICL Output current limit VOUT = 0.9 x VOUT(NOM), TJ = –40°C to 85°C 80 210 mA
PSRR Power-supply rejection ratio IOUT = 50mA,
VIN = VOUT + 1.0V		 f = 100kHz 56 dB
f = 1MHz 55
VN Output noise voltage BW = 10Hz to 100kHz, VOUT = 1.2V, IOUT = 50mA 90 µVRMS
RPULLDOWN Output automatic discharge pulldown resistance VEN < VEN(LOW) (output disabled), VIN = 3.3V 135 Ω
TSD Thermal shutdown TJ rising 160 °C
TJ falling 140
VEN(LOW)  Low input threshold VEN falling until the output is disabled, TJ = –40°C to 85°C 0.3 V
VEN(HI)  High input threshold VEN rising until the output is enabled, TJ = –40°C to 85°C 0.9 V
IEN EN input leakage current VEN = 5.5V and VIN = 5.5V 0.01 1 µA
(1) For VOUT < 1.5V, dropout is tested with VIN = 1.4V.
(2) For VOUT = 0.6V, Dropout voltage < Headroom voltage. At VIN = 1.4V, a 0.6V output device will not be in dropout. Headroom voltage = VIN - VOUT.