SNOSD29E December   2016  – April 2018 TLV8541 , TLV8542 , TLV8544

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Low Power PIR Motion Detector
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions: TLV8541 DBV
    2.     Pin Functions: TLV8542 D & RUG
    3.     Pin Functions: TLV8544 PW & D
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Rail-To-Rail Input
      2. 8.4.2 Supply Current Changes Over Common Mode
      3. 8.4.3 Design Optimization With Rail-To-Rail Input
      4. 8.4.4 Design Optimization for Nanopower Operation
      5. 8.4.5 Common-Mode Rejection
      6. 8.4.6 Output Stage
      7. 8.4.7 Driving Capacitive Load
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Battery-Powered Wireless PIR Motion Detectors
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Calculation of the Cutoff Frequencies and Gain of Stage A:
        2. 9.2.2.2 Calculation of the Cutoff Frequencies and Gain of Stage B
        3. 9.2.2.3 Calculation of the Total Gain of Stages A and B
        4. 9.2.2.4 Window Comparator Stage
        5. 9.2.2.5 Reference Voltages
      3. 9.2.3 Application Curve
    3. 9.3 Typical Application: 60-Hz Twin T Notch Filter
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curve
    4. 9.4 Dos and Don'ts
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Power Supply Recommendations

The TLV854x is specified for operation from 1.7 V to 3.6 V (±0.85 V to ±1.8 V) over a –40°C to +125°C temperature range. Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in the Typical Characteristics.

CAUTION

Supply voltages larger than 3.6 V can permanently damage the device.

For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines it is suggested that 100-nF capacitors be placed as close as possible to the op-amp power supply pins. For single supply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor between V+ and ground and one capacitor between V– and ground.

Low bandwidth nanopower devices do not have good high frequency (> 1 kHz) AC PSRR rejection against high-frequency switching supplies and other 1-kHz and above noise sources, so extra supply filtering is recommended if kilohertz or above noise is expected on the power supply lines.