SNVSCI2B February   2023  – February 2024 TLVM23615 , TLVM23625

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 System Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Input Voltage Range
      2. 7.3.2  Output Voltage Selection
      3. 7.3.3  Input Capacitors
      4. 7.3.4  Output Capacitors
      5. 7.3.5  Enable, Start-Up, and Shutdown
      6. 7.3.6  Switching Frequency (RT)
      7. 7.3.7  Power-Good Output Operation
      8. 7.3.8  Internal LDO, VCC and VOUT/FB Input
      9. 7.3.9  Bootstrap Voltage and VBOOT-UVLO (BOOT Terminal)
      10. 7.3.10 Soft Start and Recovery from Dropout
        1. 7.3.10.1 Recovery from Dropout
      11. 7.3.11 Overcurrent Protection (Hiccup Mode)
      12. 7.3.12 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Standby Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 CCM Mode
        2. 7.4.3.2 Auto Mode – Light-Load Operation
          1. 7.4.3.2.1 Diode Emulation
          2. 7.4.3.2.2 Frequency Reduction
        3. 7.4.3.3 FPWM Mode – Light-Load Operation
        4. 7.4.3.4 Minimum On-Time (High Input Voltage) Operation
        5. 7.4.3.5 Dropout
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Choosing the Switching Frequency
        3. 8.2.2.3  Setting the Output Voltage
        4. 8.2.2.4  Input Capacitor Selection
        5. 8.2.2.5  Output Capacitor Selection
        6. 8.2.2.6  VCC
        7. 8.2.2.7  CFF Selection
        8. 8.2.2.8  Power-Good Signal
        9. 8.2.2.9  Maximum Ambient Temperature
        10. 8.2.2.10 Other Connections
      3. 8.2.3 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
        1. 8.5.1.1 Ground and Thermal Considerations
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
      2. 9.1.2 Development Support
        1. 9.1.2.1 Custom Design With WEBENCH® Tools
      3. 9.1.3 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.11 Overcurrent Protection (Hiccup Mode)

The TLVM236x5 is protected from overcurrent conditions by using cycle-by-cycle current limiting circuitry on both the high-side (HS) and low-side (LS) MOSFETs. The current is compared every switching cycle to the current limit threshold. During an overcurrent condition, the output voltage decreases with reduced switching frequency.

High-side MOSFET overcurrent protection is implemented by the typical peak-current mode control scheme. The HS switch current is sensed when the HS is turned on after a short blanking time. The HS switch current is compared to the minimum of a fixed current set point or the output of the internal error amplifier loop minus the slope compensation every switching cycle. Because the output of the internal error amplifier loop has a maximum value and slope compensation increases with duty cycle, HS current limit decreases with increased duty factor if duty cycle is above 35%.

When the LS switch is turned on, the current going through it is also sensed and monitored. Like the high-side device, the low-side device has a turn-off commanded by the internal error amplifier loop. In the case of the low-side device, turn-off is prevented if the current exceeds this value, even if the oscillator normally starts a new switching cycle. Also like the high-side device, there is a limit on how high the turn-off current is allowed to be. This is called the low-side current limit. If the LS current limit is exceeded, the LS MOSFET stays on and the HS switch is not to be turned on. The LS switch is turned off after the LS current falls below this limit and the HS switch is turned on again as long as at least one clock period has passed since the last time the HS device has turned on.

If, during current limit, the voltage on the FB input falls below about 0.4 V (VHICCUP) due to a short circuit, the device enters hiccup mode. In this mode, the device stops switching for tW or about 50 ms, and then goes through a normal re-start with soft start. If the short-circuit condition remains, the device runs in current limit for about 5 ms (typical) and then shuts down again. This cycle repeats as long as the short-circuit condition persists.