SBAS933D December   2020  – June 2022 TMAG5110 , TMAG5111

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Magnetic Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 2D Description
        1. 8.3.1.1 2D General Description and Advantages
        2. 8.3.1.2 2D Magnetic Sensor Response
        3. 8.3.1.3 Axis Polarities
      2. 8.3.2 Axis Options
        1. 8.3.2.1 Device Placed In-Plane to Magnet
        2. 8.3.2.2 Device Placed on the Side Edge of the Magnet
      3. 8.3.3 Power-On Time
      4. 8.3.4 Propagation Delay
      5. 8.3.5 Hall Element Location
      6. 8.3.6 Power Derating
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Incremental Rotary Encoding Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Power Supply Recommendations

The TMAG511x is powered by 2.5-V to 38-V DC power supplies. A decoupling capacitor placed close to the device must be used to provide local energy with minimal inductance. TI recommends using a ceramic capacitor with a value of at least 0.01 µF.