SBASAJ1B December   2022  – August 2024 TMAG5115

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Magnetic Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Field Direction Definition
      2. 7.3.2 Device Output
      3. 7.3.3 Power-On Time
      4. 7.3.4 Output Stage
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 Short-Circuit Protection
        2. 7.3.5.2 Overtemperature Protection
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Standard Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Configuration Example
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Hall Sensor Location
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.5 Protection Circuits

The TMAG5115 device is fully protected against overcurrent and overtemperature conditions. Table 7-1 lists a summary of the protection circuits.

Table 7-1 Protection Circuit Summary
FAULT CONDITION DEVICE DESCRIPTION RECOVERY
FET overload ISINK ≥ ISC Operating Output current is clamped to ISC ISINK < ISC
Overtemperature TJ ≥ 156°C Operating Device shuts down until recovery temperature is reached TJ ≤ 156°C