SBOS820B September   2019  – July 2021 TMCS1100

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Typical Characteristics
      1. 7.10.1 Insulation Characteristics Curves
  8. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 Reference Voltage Rejection Ratio
      7. 8.1.7 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Input Isolation
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
        3. 9.3.3.3 Frequency Response
        4. 9.3.3.4 Transient Response
      4. 9.3.4 External Reference Voltage Input
      5. 9.3.5 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.2 Offset Error and Offset Error Drift

Offset error is the deviation from the ideal output voltage with zero input current through the device. Offset error can be referred to the output as a voltage error VOE or referred to the input as a current offset error IOS. Offset error is a single error source, however, and must only be included once in error calculations.

The output voltage offset error of the TMCS1100 is the error in the zero current output voltage from the VREF pin voltage as in Equation 3.

Equation 3. GUID-C71133F4-EAF0-4103-96E5-67910A62006F-low.gif

where

  • VOUT,0A is the device output voltage with zero input current.

The offset error includes the magnetic offset of the Hall sensor and any offset voltage errors of the signal chain.

The input referred (RTI) offset error is the output voltage offset error divided by the sensitivity of the device, shown in Equation 4. Refer the offset error to the input of the device to allow for easier total error calculations and direct comparison to input current levels. No matter how the calculations are done, the error sources quantified by VOE and IOS are the same, and should only be included once for error calculations.

Equation 4. GUID-98D6EFB9-53FC-476E-B6EB-067CA4C0D6C3-low.gif

Offset error drift is the change in the input-referred offset error per degree Celsius change in ambient temperature. This parameter is reported in µA/°C. To convert offset drift to an absolute offset for a given change in temperature, multiply the drift by the change in temperature and convert to percentage, as in Equation 5.

Equation 5. GUID-4325DA35-B9AF-4792-80D1-380480322DFE-low.gif

where

  • IOS,drift is the specified input-referred device offset drift.
  • ΔT is the temperature range from 25°C.