SBOSAF3A November   2023  – June 2024 TMCS1126

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Insulation Specifications
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Accuracy Parameters
      1. 7.1.1 Sensitivity Error
      2. 7.1.2 Offset Error and Offset Error Drift
      3. 7.1.3 Nonlinearity Error
      4. 7.1.4 Power Supply Rejection Ratio
      5. 7.1.5 Common-Mode Rejection Ratio
      6. 7.1.6 External Magnetic Field Errors
    2. 7.2 Transient Response Parameters
      1. 7.2.1 CMTI, Common-Mode Transient Immunity
    3. 7.3 Safe Operating Area
      1. 7.3.1 Continuous DC or Sinusoidal AC Current
      2. 7.3.2 Repetitive Pulsed Current SOA
      3. 7.3.3 Single Event Current Capability
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Input
      2. 8.3.2 Ambient Field Rejection
      3. 8.3.3 High-Precision Signal Chain
        1. 8.3.3.1 Temperature Stability
        2. 8.3.3.2 Lifetime and Environmental Stability
      4. 8.3.4 Internal Reference Voltage
      5. 8.3.5 Current-Sensing Measurable Ranges
      6. 8.3.6 Overcurrent Detection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Behavior
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Total Error Calculation Examples
        1. 9.1.1.1 Room-Temperature Error Calculations
        2. 9.1.1.2 Full-Temperature Range Error Calculations
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Device Support
      1. 10.2.1 Development Support
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

at TA = 25°C, VS = 5V on TMCS1126Axx, VS = 3.3V on TMCS1126Bxx and TMCS1126Cxx (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
RIN Input Conductor Resistance IN+ to IN– 0.7 mΩ
RIN Input Conductor Resistance Temperature Drift TA= –40ºC to 125ºC 2.1 μΩ/°C
IIN,MAX Maximum Continuous Input Current(1) TA= 25ºC 80 ARMS
TA= 125ºC 44
OUTPUT
S Sensitivity TMCS1126x6x 15 mV/A
TMCS1126x1x 25
TMCS1126x7x 30
TMCS1126x9x 33
TMCS1126x8x 40
TMCS1126x2x 50
TMCS1126xAx 66
TMCS1126x3x 75
TMCS1126x4x 100
TMCS1126x5x 150
eS Sensitivity Error: Grade A TMCS1126xxA, 0.05V ≤ VOUT ≤ VS − 0.2V ±0.1 ±0.4 %
Sensitivity Error: Grade B TMCS1126xxB, 0.05V ≤ VOUT ≤ VS − 0.2V ±0.3 ±1
Sdrift,therm Sensitivity Thermal Drift: Grade A TMCS1126xxA, 0.05V ≤ VOUT ≤ VS − 0.2V, TA = −40°C to 125°C ±20 ±50 ppm/°C
Sensitivity Thermal Drift: Grade B TMCS1126xxB, 0.05V ≤ VOUT ≤ VS − 0.2V, TA = −40°C to 125°C ±40 ±100
Sdrift, life Sensitivity Lifetime Drift(2) 0.05V ≤ VOUT ≤ VS − 0.2V ±0.2 ±0.5 %
eNL Nonlinearity Error: Grade A TMCS1126xxA, VOUT = 0.1V to VS – 0.1V ±0.1 %
Nonlinearity Error: Grade B TMCS1126xxB, VOUT = 0.1V to VS – 0.1V ±0.2
VOUT,0A Zero Current Output Voltage TMCS1126Axx, IIN = 0A 2.5 V
TMCS1126Bxx, IIN = 0A 1.65
TMCS1126Cxx, IIN = 0A 0.33
VOE Output Voltage Offset Error: Grade A TMCS1126x6A, VOUT,0A − VREF, IIN = 0A ±0.1 ±0.8 mV
TMCS1126x1A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1
TMCS1126x7A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1
TMCS1126x9A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1
TMCS1126x8A, VOUT,0A − VREF, IIN = 0A ±0.3 ±1.5
TMCS1126x2A, VOUT,0A − VREF, IIN = 0A ±0.3 ±1.5
TMCS1126xAA, VOUT,0A − VREF, IIN = 0A ±0.4 ±2
TMCS1126x3A, VOUT,0A − VREF, IIN = 0A ±0.4 ±2
TMCS1126x4A, VOUT,0A − VREF, IIN = 0A ±0.5 ±2.5
TMCS1126x5A, VOUT,0A − VREF, IIN = 0A ±0.6 ±3
Output Voltage Offset Error: Grade B TMCS1126x6B, VOUT,0A − VREF, IIN = 0A ±0.4 ±1.5
TMCS1126x1B, VOUT,0A − VREF, IIN = 0A ±0.7 ±2
TMCS1126x7B, VOUT,0A − VREF, IIN = 0A ±0.7 ±2
TMCS1126x9B, VOUT,0A − VREF, IIN = 0A ±0.7 ±2
TMCS1126x8B, VOUT,0A − VREF, IIN = 0A ±0.8 ±2.5
TMCS1126x2B, VOUT,0A − VREF, IIN = 0A ±0.8 ±2.5
TMCS1126xAB, VOUT,0A − VREF, IIN = 0A ±1 ±3
TMCS1126x3B, VOUT,0A − VREF, IIN = 0A ±1 ±3
TMCS1126x4B, VOUT,0A − VREF, IIN = 0A ±1.5 ±4.5
TMCS1126x5B, VOUT,0A − VREF, IIN = 0A ±2 ±6
VOE, drift, therm Output Voltage Offset Thermal Drift TMCS1126x6x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±10 ±30 µV/°C
TMCS1126x1x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±10 ±30
TMCS1126x7x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±15 ±40
TMCS1126x9x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±15 ±40
TMCS1126x8x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±15 ±40
TMCS1126x2x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±15 ±40
TMCS1126xAx, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±20 ±50
TMCS1126x3x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±20 ±70
TMCS1126x4x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±30 ±80
TMCS1126x5x, VOUT,0A − VREF, IIN = 0A, TA = −40°C to 125°C ±40 ±100
IOS, drift, life Offset Lifetime Drift(2) Input Referred, (VOUT,0A − VREF) / S, IIN = 0A ±8 ±16 mA
PSRR Power Supply Rejection Ratio: Grade A TMCS1126xxA, Input Referred, VS = 3V to 5.5V, TA= –40ºC to 125ºC ±10 ±45 mA/V
Power Supply Rejection Ratio: Grade B TMCS1126xxB, Input Referred, VS = 3V to 5.5V, TA= –40ºC to 125ºC ±40 ±80
CMTI Common Mode Transient Immunity(3) VCM = 1000V, ΔVOUT < 200mV, 1µs 150 kV/µs
CMRR Common Mode Rejection Ratio Input Referred, DC to 60Hz 5 µA/V
CMFR Common Mode Field Rejection Uniform External Magnetic Field, Input Referred, DC to 1kHz 10 mA/mT
Input Noise Density Input Referred, Full Bandwidth 150 μA/√Hz
CL,MAX Maximum Capacitive Load VOUT to GND 4.7 nF
Short Circuit Output Current VOUT short to GND, short to VS 50 mA
SwingVS Swing to VS Power Supply Rail RL = 10kΩ to GND, TA= –40ºC to 125ºC VS – 0.02 VS – 0.05 V
SwingGND Swing to GND 5 10 mV
BANDWIDTH & RESPONSE
BW Analog Bandwidth - 3dB Gain 550 kHz
SR Slew Rate(4) Output rate of change between reaching 10% and 90% of final value as shown in Figure 7-2 with a 100ns input step 6 V/µs
tr Response Time(4) Time between input and output reaching 90% of final values, as shown in Figure 7-2 with a 100ns input step and a 1V output transition 250 ns
tpd Propagation Delay(4) Time between input and output reaching 10% of final values as shown in Figure 7-2 with a 100ns input step and a 1V output transition 60 ns
Current Overload Recovery Time 300 ns
INTEGRATED REFERENCE
VREF Reference Output Voltage: Grade A TMCS1126AxA 2.496 2.5 2.504 V
TMCS1126BxA 1.647 1.65 1.653
TMCS1126CxA 0.329 0.33 0.331
Reference Output Thermal Drift: Grade A TMCS1126AxA 20 50 µV/°C
TMCS1126BxA 15 33
TMCS1126CxA 3 7
Reference Output Lifetime Drift: Grade A TMCS1126AxA ±1.3 ±2.5 mV
TMCS1126BxA ±0.9 ±1.7
TMCS1126CxA ±0.3 ±0.5
VREF Reference Output Voltage: Grade B TMCS1126AxB 2.49 2.5 2.51 V
TMCS1126BxB 1.64 1.65 1.66
TMCS1126CxB 0.32 0.33 0.34
Reference Output Thermal Drift: Grade B TMCS1126AxA 40 100 µV/°C
TMCS1126BxA 25 65
TMCS1126CxA 5 15
Reference Output Lifetime Drift: Grade B TMCS1126AxB ±3 ±5 mV
TMCS1126BxB ±2 ±3.5
TMCS1126CxB ±0.6 ±1
Reference Output Voltage PSRR VS = 3V to 5.5V 80 150 µV/V
Maximum Reference Output Capacitive Load 20 nF
Reference Output Voltage Load Regulation VREF load = -5mA, 0mA, 5mA 0.25 mV/mA
OVER CURRENT DETECTION
VOC Over Current Detection Threshold Voltage VOC = S x IOC / 2.5 0.3 VS V
ROC Over Current Input Impedance 120 kΩ
Over Current Hysteresis TMCS1126x6x 8.4 A
TMCS1126x1x 4.5
TMCS1126x7x 3.6
TMCS1126x9x 3.4
TMCS1126x8x 4.7
TMCS1126x2x 3.5
TMCS1126xAx 2.5
TMCS1126x3x 2.2
TMCS1126x4x 1.4
TMCS1126x5x 2.7
IOC Error TA = –40°C to 125°C ±2 ±10 %
Over Current Detection Response Time IIN step = 120% of IOC 100 250 ns
OC,OL OC Pin Pull-down Voltage IOL = 3mA. TA = –40°C to 125°C GND 0.07 0.2 V
ALERT Output Frequency 8 kHz
Output Duty Cycle, Active Low Thermal Alert 80 %
Sensor Alert 50
Thermal & Sensor Alert 20
ALERT Pull-down Voltage IOL = 3mA. TA = –40°C to 125°C GND 0.07 0.2 V
POWER SUPPLY
VS Supply Voltage TA = –40ºC to 125ºC 3.0 5.5 V
IQ Quiescent Current TA = 25ºC 11 14 mA
TA = –40ºC to 125ºC 14.5 mA
Power On Time Time from VS > 3V to valid output 34 ms
(1) Thermally limited by junction temperature, see Absolute Maximum Ratings. Applies when device mounted on TMCS1126xEVM. For more details, see the Safe Operating Area section.
(2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details.
(3) Refer to the Common-Mode Transient Immunity section for details on common-mode transient response.
(4) Refer to the Transient Response Parameters section for details on transient response of the device.