SBOSAG0B October   2023  – August 2024 TMCS1133

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Insulation Specifications
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Accuracy Parameters
      1. 7.1.1 Sensitivity Error
      2. 7.1.2 Offset Error and Offset Error Drift
      3. 7.1.3 Nonlinearity Error
      4. 7.1.4 Power Supply Rejection Ratio
      5. 7.1.5 Common-Mode Rejection Ratio
      6. 7.1.6 External Magnetic Field Errors
    2. 7.2 Transient Response Parameters
      1. 7.2.1 CMTI, Common-Mode Transient Immunity
    3. 7.3 Safe Operating Area
      1. 7.3.1 Continuous DC or Sinusoidal AC Current
      2. 7.3.2 Repetitive Pulsed Current SOA
      3. 7.3.3 Single Event Current Capability
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Input
      2. 8.3.2 Ambient Field Rejection
      3. 8.3.3 High-Precision Signal Chain
        1. 8.3.3.1 Temperature Stability
        2. 8.3.3.2 Lifetime and Environmental Stability
      4. 8.3.4 Internal Reference Voltage
      5. 8.3.5 Current-Sensing Measurable Ranges
      6. 8.3.6 Overcurrent Detection
      7. 8.3.7 Sensor Diagnostics
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Behavior
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Total Error Calculation Examples
        1. 9.1.1.1 Room-Temperature Error Calculations
        2. 9.1.1.2 Full-Temperature Range Error Calculations
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Device Support
      1. 10.2.1 Development Support
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DVG|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

at TA = 25°C, VS = 5V on TMCS1133AxA, VS = 3.3V on TMCS1133BxA and TMCS1133CxA (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
RIN Input Conductor Resistance IN+ to IN– 0.7 mΩ
RIN Input Conductor Resistance Temperature Drift TA= –40ºC to 125ºC 2.1 μΩ/°C
IIN,MAX Maximum Continuous Input Current(1) TA= 25ºC 80 ARMS
TA= 125ºC 44
OUTPUT
S Sensitivity TMCS1133x7A 20 mV/A
TMCS1133x1A 25
TMCS1133x8A 33
TMCS1133x2A 50
TMCS1133x9A 66
TMCS1133x3A 75
TMCS1133x4A 100
TMCS1133x5A 150
eS Sensitivity Error 0.05V ≤ VOUT ≤ VS − 0.2V ±0.1 ±0.4 %
Sdrift,therm Sensitivity Thermal Drift 0.05V ≤ VOUT ≤ VS − 0.2V, TA = −40°C to 125°C ±20 ±50 ppm/°C
Sdrift, life Sensitivity Lifetime Drift(2) 0.05V ≤ VOUT ≤ VS − 0.2V ±0.2 ±0.5 %
eNL Nonlinearity Error VOUT = 0.1V to VS – 0.1V ±0.1 %
VOUT,0A Zero Current Output Voltage TMCS1133AxA, IIN = 0A 2.5 V
TMCS1133BxA, IIN = 0A 1.65
TMCS1133CxA, IIN = 0A 0.33
VOE Output Voltage Offset Error TMCS1133x7A, IIN = 0A ±0.2 ±1 mV
TMCS1133x1A, IIN = 0A ±0.2 ±1
TMCS1133x8A, IIN = 0A ±0.2 ±1
TMCS1133x2A, IIN = 0A ±0.3 ±2
TMCS1133x9A, IIN = 0A ±0.3 ±2
TMCS1133x3A, IIN = 0A ±0.4 ±3
TMCS1133x4A, IIN = 0A ±0.5 ±4
TMCS1133x5A, IIN = 0A ±0.6 ±5
VOE, drift, therm Output Voltage Offset Thermal Drift TMCS1133x7A, IIN = 0A, TA = –40°C to 125°C ±10 ±25 µV/°C
TMCS1133x1A, IIN = 0A, TA = –40°C to 125°C ±10 ±25
TMCS1133x8A, IIN = 0A, TA = –40°C to 125°C ±10 ±25
TMCS1133x2A, IIN = 0A, TA = –40°C to 125°C ±10 ±30
TMCS1133x9A, IIN = 0A, TA = –40°C to 125°C ±10 ±30
TMCS1133x3A, IIN = 0A, TA = –40°C to 125°C ±10 ±30
TMCS1133x4A, IIN = 0A, TA = –40°C to 125°C ±15 ±40
TMCS1133x5A, IIN = 0A, TA = –40°C to 125°C ±15 ±40
IOS, drift, life Offset Lifetime Drift(2) Input Referred, VOUT,0A / S, IIN = 0A ±10 ±24 mA
PSRR Power Supply Rejection Ratio Input Referred, VS = 3V to 5.5V, TA= –40ºC to 125ºC ±15 ±50 mA/V
CMTI Common Mode Transient Immunity(3) VCM = 1000V, ΔVOUT < 200mV, 1µs 150 kV/µs
CMRR Common Mode Rejection Ratio Input Referred, DC to 60Hz 5 µA/V
CMFR Common Mode Field Rejection Uniform External Magnetic Field, Input Referred, DC to 1kHz 10 mA/mT
Input Noise Density Input Referred, Full Bandwidth 130 μA/√Hz
CL,MAX Maximum Capacitive Load VOUT to GND 4.7 nF
Short Circuit Output Current VOUT short to GND, short to VS 50 mA
SwingVS Swing to VS Power Supply Rail RL = 10kΩ to GND, TA= –40ºC to 125ºC VS – 0.02 VS – 0.05 V
SwingGND Swing to GND 5 10 mV
BANDWIDTH & RESPONSE
BW Analog Bandwidth - 3dB Gain 1.1 MHz
SR Slew Rate(4) Output rate of change between reaching 10% and 90% of final value as shown in Figure 7-2 with a 100ns input step 8 V/µs
tr Response Time(4) Time between input and output reaching 90% of final values, as shown in Figure 7-2 with a 100ns input step and a 1V output transition 120 ns
tpd Propagation Delay(4) Time between input and output reaching 10% of final values as shown in Figure 7-2 with a 100ns input step and a 1V output transition 50 ns
Current Overload Recovery Time 300 ns
OVER CURRENT DETECTION
VOC Over Current Detection Threshold Voltage VOC = S x IOC / 2.5 0.3 VS V
VOC Pin Input Impedance 120 kΩ
Over Current Hysteresis TMCS1133x7A 5 A
TMCS1133x1A 4.5
TMCS1133x8A 3.4
TMCS1133x2A 3.5
TMCS1133x9A 2.8
TMCS1133x3A 2.2
TMCS1133x4A 1.4
TMCS1133x5A 2.7
Vover Current Threshold Error TA = –40°C to 125°C ±2 ±10 %
Over Current Detection Response Time IIN step = 120% of IOC 100 250 ns
OC,OL OC Pin Pull-down Voltage IOL = 3mA, TA = –40°C to 125°C GND 0.07 0.2 V
DIAGNOSTICS
ALERT Output Frequency 8 kHz
Output Duty Cycle, Active Low Thermal Alert 80 %
Sensor Alert 50
Thermal & Sensor Alert 20
ALERT Pin Pull-down Voltage IOL = 3mA. TA = –40°C to 125°C GND 0.07 0.2 V
POWER SUPPLY
VS Supply Voltage TA = –40ºC to 125ºC 3.0 5.5 V
IQ Quiescent Current TA = 25ºC 11 14 mA
TA = –40ºC to 125ºC 14.5 mA
Power On Time Time from VS > 3V to valid output 34 ms
(1) Thermally limited by junction temperature, see Absolute Maximum Ratings. Applies when device mounted on TMCS1133xEVM. For more details, see the Safe Operating Area section.
(2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details.
(3) Refer to the Common-Mode Transient Immunity section for details on common-mode transient response.
(4) Refer to the Transient Response Parameters section for details on transient response of the device.