SLLSEN7E October 2015 – September 2017 TMDS171
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply Voltage Range | VCC | –0.3 | 4 | V |
VDD | –0.3 | 1.4 | ||
Voltage Range | Main Link Input Differential Voltage (IN_Dx, IN_CLKx); IIN = 15mA | VCC - 0.75 V | VCC + 0.3 V | |
TMDS Outpus ( OUT_Dx) | –0.3 | 4 | ||
HPD_SRC, Vsadj, SDA_CTL, SCL_CTL, OE, A1, PRE_SEL, EQ_SEL/A0, I2C_EN/PIN, SIG_EN, TX_TERM_CTL, | –0.3 | 4 | ||
HDP_SNK, SDA_SNK, SCL_SNK, SDA_SRC, SCL_SRC | –0.3 | 6 | ||
Input Current IIN | Main Link Input Differential Voltage (IN_Dx, IN_CLKx); | 15 | mA | |
Continuous power dissipation | See Thermal Information | |||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VCC | Supply Voltage Nominal Value 3.3 V | 3.135 | 3.3 | 3.465 | V | |
VDD | Supply Voltage Nominial Value 1.2 V | 1.1 | 1.2 | 1.27 | V | |
TSTG | Storage temperature | –65 | 150 | °C | ||
TCASE | Case temperature | 92.7 | °C | |||
TA | Operating free-air temperature (TMDS171) | 0 | 85 | °C | ||
Operating free-air temperature (TMDS171I) | –40 | 85 | °C | |||
MAIN LINK DIFFERENTIAL PINS | ||||||
VID(PP) | Peak-to-peak input differential voltage | 75 | 1560 | mVpp | ||
VIC | Input Common Mode Voltage | VCC – 0.4 | VCC + 0.1 | V | ||
dR | Data rate | 0.25 | 3.4 | Gbps | ||
R(VSADJ) | TMDS compliant swing voltage bias resistor 1% | 7.06 | KΩ | |||
CONTROL PINS | ||||||
VI(DC) | DC Input Voltage | –0.3 | 3.6 | V | ||
VIL(1) | Low-level input voltage OE | 0.8 | V | |||
Low-level input voltage at PRE_SEL, EQ_SEL/A0, TX_TERM_CTL, SWAP/POL pins only(1) | 0.3 | V | ||||
VIM(1) | Mid-Level input voltage at PRE_SEL, EQ_SEL/A0, TX_TERM_CTL, SWAP/POL pins only(1) | 1 | 1.2 | 1.4 | V | |
VIH(1) | High-level input voltage at PRE_SEL, EQ_SEL/A0, TX_TERM_CTL, SWAP/POL, OE(2) pins only(1) | 2.6 | V | |||
VOL | Low-level output voltage | 0.4 | V | |||
VOH | High-level output voltage | 2.4 | V | |||
IIH | High level input current | 30 | 30 | µA | ||
IIL | Low level input current | –25 | 25 | µA | ||
IOS | Short circuit output current | –50 | 50 | mA | ||
IOZ | High impedance output current | 10 | µA | |||
R(OEPU) | Pull up resistance on OE pin | 150 | 250 | KΩ |
THERMAL METRIC(1) | RGZ (QFN) | UNIT | |
---|---|---|---|
48 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 31.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 18.2 | |
RθJB | Junction-to-board thermal resistance | 8.1 | |
ψJT | Junction-to-top characterization parameter | 0.4 | |
ψJB | Junction-to-board characterization parameter | 8.1 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3.2 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
Power Supply | |||||||
P(D1)(1)(2) | Device power Dissipation (Retimer Operation) | OE = H, VCC = 3.3 V / 3.465 V, VDD = 1.2 V / 1.27 V IN_Dx: VID_PP = 1200 mV, I2C_EN/PIN = L, PRE_SEL= H, EQ_CTL= H, SDA_CTL/CLK_CTL = 0 V 3.4 Gbps TMDS pattern, VI = 3.3 V; VSADJ = 7.06 kΩ |
675 | 875 | mW | ||
P(D2)(1)(2) | Device power Dissipation (Redriver Operation) | 400 | 600 | mW | |||
P(SD1)(1)(2)(3) | Device power in Standby | OE = H, VCC = 3.3 V / 3.465 V VDD = 1.2 V / 1.27 V , HPD = H, No Valid input Signal |
50 | 100 | mW | ||
P(SD2)(1)(2)(3) | Device power in PowerDown | OE = L, VCC = 3.3 V / 3.465 V VDD = 1.2 V / 1.27 V |
10 | 30 | mW | ||
ICC1(1)(2) | VCC Supply current (TMDS 3.4 Gpbs Retimer Mode) | OE = H, VCC = 3.3 V / 3.465 V VDD = 1.2 V / 1.27 V IN_Dx: VID_PP = 1200 mV, 3.4 Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H |
80 | 140 | mA | ||
IDD1(1)(2) | VDD Supply current (TMDS 3.4 Gpbs Retimer Mode) | 286 | 325 | mA | |||
ICC2(1)(2) | VCC Supply current (TMDS 3.4 Gpbs Redriver Mode) | OE = H, VCC = 3.3 V / 3.465 V VDD = 1.2 V / 1.27 V IN_Dx: VID_PP = 1200 mV, 3.4 Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0V, SLEW_CTL = H |
51 | mA | |||
IDD2(1)(2) | VDD Supply current (TMDS 3.4 Gpbs Redriver Mode) | 188 | mA | ||||
I(SD1)(3) | Standby current | OE = H, VCC = 3.3 V / 3.465 V VDD = 1.2 V / 1.27 V HPD = H: No valid signal on IN_CLK |
3.3V Rail(1) | 6 | 15 | mA | |
1.2V Rail | 40 | 50 | |||||
I(SD2)(3) | PowerDown current | OE = L, VCC = 3.3 V / 3.465 V VDD = 1.2 V / 1.27 V |
3.3V Rail(1) | 2 | 5 | mA | |
1.2V Rail | 3.5 | 15 | |||||
TMDS Differential Input | |||||||
D(R_RX_DATA) | TMDS data lanes data rate | 0.25 | 3.4 | Gbps | |||
D(R_RX_CLK) | TMDS clock lanes clock rate | 25 | 340 | MHz | |||
tRX_DUTY | Input clock duty circle | 40% | 50% | 60% | |||
tCLK_JIT | Input clock jitter tolerance | 0.3 | Tbit | ||||
tDATA_JIT | Input data jitter tolerance | Test the TTP2 See Figure 11 | 150 | ps | |||
tRX_INTRA | Input intra-pair skew tolerance | Test at TTP2 when DR = 1.6 Gbps See Figure 11 | 112 | ps | |||
tRX_INTER | Input inter-pair skew tolerance | 1.8 | ns | ||||
EQH(D) | Fixed EQ gain for data lane IN_D(0,1,2)n/p | EQ_SEL/A0=H; Fixed EQ gain, test at 3.4 Gbps | 14 | dB | |||
EQL(D) | Fixed EQ gain for data lane IN_D(0,1,2)n/p | EQ_SEL/A0=L; Fixed EQ gain, test at 3.4 Gbps | 7.5 | ||||
EQZ(D) | Adaptive EQ gain for data lane IN_D(0,1,2)n/p | EQ_SEL/A0=NC; adaptive EQ | 2 | 14 | |||
EQ(C) | EQ gain for clock lane IN_CLKn/p | EQ_SEL/A0=H,LNC | 0 | ||||
R(INT) | Input differential termination impedance | 90 | 100 | 115 | Ω | ||
TMDS Differential Output | |||||||
VOH | Single-ended high level output voltage | PRE_SEL = NC; TX_TERM_CTL = H; OE = H; DR = 750 Mbps; VSadj = 7.06 kΩ | VCC - 10mV | VCC + 10mV | V | ||
PRE_SEL = NC; TX_TERM_CTL = H; OE = NC; DR = 2.97 Gbps; VSadj = 7.06 kΩ | VCC - 200mV | VCC + 10mV | |||||
VOL | Single-ended low level output voltage No Pre-emphasis, Load is 50 Ω pull ups to 3.135 V and 3.465 V | PRE_SEL = NC; TX_TERM_CTL = H; OE = H; DR = 750 Mbps; VSadj = 7.06 kΩ | VCC - 600mV | VCC - 400mV | |||
PRE_SEL = NC; TX_TERM_CTL = H; OE = NC; DR = 2.97 Gbps; VSadj = 7.06 kΩ | VCC - 700mV | VCC - 400mV | |||||
V(SWING_DA) | Single-ended output voltage swing on data lane | PRE_SEL = NC; TX_TERM_CTL = H/NC; OE = NC; DR = ≤ 3.4 Gbps; VSadj = 7.06 kΩ |
400 | 500 | 600 | mV | |
V(SWING_CLK) | Single-ended output voltage swing on clock lane | PRE_SEL = NC; TX_TERM_CTL = H/NC; OE = NC; DR = ≤ 3.4 Gbps; VSadj = 7.06 kΩ |
400 | 500 | 600 | ||
ΔV(SWING) | Change in single-end output voltage swing per 100Ω ΔVSadj | 20 | |||||
ΔVOCM(SS) | Change in steady state output common mode voltage between logic levels | –5 | 5 | ||||
VOD(PP) | Initial output differential voltage before steady state when pre-emphasis or de-emphasis is implemented | VSadj = 7.06 kΩ; PRE_SEL = NC, See Figure 8 | 800 | 1200 | |||
VOD(SS) | Steady state output differential voltage | VSadj = 7.06 kΩ; PRE_SEL = L, See Figure 9 | 600 | 1075 | |||
IOS | Short circuit current limit | Main link output shorted to GND | 50 | mA | |||
ILEAK | Failsafe condition leakage current | VCC = 0 V; VDD = 0 V; TMDS Outputs pulled to 3.3V through 50 Ω resistor | 45 | µA | |||
R(TERM) | Source Termination resistance | 150 | 300 | Ω | |||
DDC and I2C | |||||||
VI-DC | SCL/SDA_SNK, SCL/SDA_SRC DC input voltage | –0.3 | 5.5 | V | |||
SCL/SDA_CTL, DC input voltage | –0.3 | 3.6 | V | ||||
VIL | SCL/SDA_SNK, SCL/SDA_SRC Low level input voltage | 0.3 x VCC | V | ||||
SCL/SDA_CTL Low level input voltage | 0.3 x VCC | V | |||||
VIH | SCL/SDA_SNK, SCL/SDA_SRC high level input voltage | 3 | V | ||||
SCL/SDA_CTL high level input voltage | 0.7 x VCC | V | |||||
VOL | SCL/SDA_CTL, SCL/SDA_SRC low level output voltage | IO = 3 mA and VCC > 2 V | 0.4 | V | |||
IO = 3 mA and VCC < 2 V | 0.2 x VCC | V | |||||
fSCL | SCL clock frequency fast I2C mode for local I2C control | 400 | kHz | ||||
Cbus | Total capacitive load for each bus line (DDC and local I2C pins) | 400 | pF | ||||
HPD | |||||||
VIH | High-level input voltage | HPD_SNK | 2.1 | V | |||
VIL | Low-level input voltage | HPD_SNK | 0.8 | ||||
VOH | High-level output voltage | IOH = -500 µA; HPD_SRC | 2.4 | 3.6 | |||
VOL | Low-level output voltage | IOL = -500 µA; HPD_SRC | 0 | 0.1 | |||
ILEAK | Failsafe condition leakage current | VCC = 0 V; VDD = 0 V; HPD_SNK = 5 V | 40 | ||||
IH(HPD) | High level input current | Device powered; VIH = 5 V; IH(HPD) includes Rpd(HPD) resistor current | 40 | µA | |||
Device powered; VIL = 0.8 V; IH(HPD) includes Rpd(HPD) resistor current | 30 | ||||||
Rpd(HPD) | HPD input termination to GND; | VCC < 0 V | 150 | 190 | 220 | kΩ | |
SPDIF and ARC | |||||||
V(EL) | Operating DC voltage for single mode ARC output | Test at ARC_OUT, see Figure 19 | 0 | 5 | V | ||
VIN(DC) | Operating DC voltage for SPDIF input | 0.05 | V | ||||
V(SP_SW) | Signal amplitude of SPDIF input | 0.2 | 0.5 | 0.6 | V | ||
V(ElSWING) | Signal amplitude on the ARC output | Test at ARC_OUT, 75 Ω external termination resistor, see Figure 19 | 0.4 | 0.5 | 0.6 | V | |
CLK(ARC) | Signal frequency on ARC | Test at ARC_OUT, see Figure 19 | 3.687 | 5.645±0.1% | 13.517 | MHz | |
Duty Cycle | Output Clock Duty cycle | 45% | 50% | 55% | |||
Data Rate | SPDIF Input DR | 7.373 | 11.29 | 27.034 | Mbps | ||
tEDGE | The rise/fall time for ARC output | From 10% to 90% voltage level, see Figure 19 | 0.4 | UI | |||
R(IN_SPDIF) | The Input Termination resistance for SPDIF | 75 | Ω | ||||
R(EST) | Single mode Output Termination resistance | 0.1 MHz to 128 times the maximum frame rate | 36 | 55 | 75 | Ω |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
TMDS Redriver Mode | ||||||
DR | Data rate (Redriver mode) | 250 | 3400 | Mbps | ||
tPLH | Propagation delay time (low to high) | 250 | 600 | ps | ||
tPHL | Propagation delay time (high to low) | 250 | 800 | |||
tT1 | Transition time (rise and fall time); measured at 20% and 80% levels for Data Lanes. | TX_TERM_CTL=L; PRE_SEL=NC; Data Rate 3.4 Gbps; Clock 340 MHz | 75 | |||
tSK1(T) | Intra-pair output skew | TX_TERM_CTL=NC; PRE_SEL=NC; | 40 | |||
tSK2(T) | Inter-pair output skew | TX_TERM_CTL=NC; PRE_SEL=NC; | 100 | |||
tJITD1 | Total output data jitter | DR = 750 Mbps, PRE_SEL = NC, EQ_SEL/A0 = NC. See Figure 5 at TTP3 | 0.2 | Tbit | ||
tJITC1 | Total output clock jitter | 0.25 | ||||
TMDS Retimer Mode | ||||||
DR | Data rate (retimer mod ) | 1.2 | 3.4 | Gbps | ||
d(XVR) | Automatic redriver to Retimer Cross-Over | Measured with input signal applied from 0 to 200 mVPP | 0.75 | 1.00 | 1.25 | Gbps |
f(CROSSOVER) | Crossover frequency hysteresis | 250 | MHz | |||
PLL(BW) | Data Retimer PLL bandwidth | Default loop bandwidth setting | 0.4 | 1 | MHz | |
tACQ | Input Clock Frequency Detection and Retimer Acquisition Time | 180 | µs | |||
IJT1 | Input Clock Jitter Tolerance | Tested when data rate > 1.0 Gbps | 0.3 | Tbit | ||
tT1 | Transition time (rise and fall time); measured at 20% and 80% levels for Data Lanes. TMDS | 75 | ps | |||
tDCD | OUT_CLK ± duty cycle | 40% | 50% | 60% | ||
tSK_INTER | Inter-pair output skew | Default setting for internal inter-pair skew adjust, PRE_SEL = NC; TX_TERM_CTL = NC, DR ≤ 3.4 Gbps; See Figure 6 | 0.2 | Tch | ||
tSK_INTRA | Intra-pair output skew | Default setting for internal intra-pair skew adjust, PRE_SEL = NC; TX_TERM_CTL = NC, DR ≤ 3.4 Gbps; See Figure 6 | 0.15 | Tbit | ||
tJITC2 | Total output clock jitter | CLK Rate ≤ 340 MHz | 0.25 | Tbit | ||
tJITD2 | Total output data jitter | DR ≤ 3.4 Gbps; See Figure 11 | 0.2 | Tbit | ||
HPD | ||||||
tPD(HPD) | Propagation delay from HPD_SNK to HPD_SRC; rising edge and falling edge(1) | see Figure 13; not valid during switching time | 40 | 120 | ns | |
tT(HPD) | HPD logical disconnected timeout | see Figure 14 | 2 | ms | ||
DDC and I2C | ||||||
tr | Rise time of both SDA and SCL signals | VCC = 3.3 V | 300 | ns | ||
tf | Fall time of both SDA and SCL signals | 300 | ||||
tHIGH | Pulse duration, SCL high | 0.6 | µs | |||
tLOW | Pulse duration, SCL low | 1.3 | ||||
tSU1 | Setup time, SDA to SCL | 100 | ns | |||
tST,STA | Setup time, SCL to start condition | 0.6 | µs | |||
tHD,STA | Hold time, start condition to SCL | 0.6 | ||||
tST,STO | Setup time, SCL to stop condition | 0.6 | ||||
t(BUF) | Bus free time between stop and start condition | 1.3 | ||||
tPLH1 | Propagation delay time, low-to-high-level output | Source to Sink:100 kbps pattern; Cb(Sink) = 400 pF(2); see Figure 17 |
360 | ns | ||
tPHL1 | Propagation delay time, high-to-low-level output | 230 | ||||
tPLH2 | Propagation delay time, low-to-high-level output | Sink to Source: 100 kbps pattern; Cb(Source) = 100 pF(2); see Figure 18 |
250 | |||
tPHL2 | Propagation delay time, high-to-low-level output | 200 |