SBOS821 November   2016 TMP421-Q1 , TMP422-Q1 , TMP423-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Temperature Measurement Data
      2. 8.3.2 Remote Sensing
      3. 8.3.3 Series Resistance Cancellation
      4. 8.3.4 Differential Input Capacitance
      5. 8.3.5 Filtering
      6. 8.3.6 Sensor Fault
      7. 8.3.7 Undervoltage Lockout
      8. 8.3.8 Timeout Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode (SD)
    5. 8.5 Programming
      1. 8.5.1  Serial Interface
      2. 8.5.2  Bus Overview
      3. 8.5.3  Bus Definitions
      4. 8.5.4  Serial Bus Address
      5. 8.5.5  Two-Wire Interface Slave Device Addresses
      6. 8.5.6  Read and Write Operations
      7. 8.5.7  High-Speed Mode
      8. 8.5.8  One-Shot Conversion
      9. 8.5.9  η-Factor Correction Register
      10. 8.5.10 Software Reset
      11. 8.5.11 General Call Reset
      12. 8.5.12 Identification Registers
    6. 8.6 Register Maps
      1. 8.6.1 Pointer Register
      2. 8.6.2 Temperature Registers
      3. 8.6.3 Status Register
      4. 8.6.4 Configuration Register 1
      5. 8.6.5 Configuration Register 2
      6. 8.6.6 Conversion Rate Register
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TMP421-Q1 Basic Connections
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 TMP422-Q1 Basic Connections
      3. 9.2.3 TMP423-Q1 Basic Connections
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Measurement Accuracy and Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply, VS 7 V
Input voltage Pins 1, 2, 3, and 4 only –0.5 VS + 0.5 V
Pins 6 and 7 only –0.5 7
Input current 10 mA
Operational temperature –55 127 °C
Junction temperature, TJ max 150 °C
Storage temperature, Tstg –60 130 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±3000 V
Charged-device model (CDM), per AEC Q100-011 ±750
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Temperature –40 125 °C
Power-supply voltage 2.7 5.5 V

Thermal Information

THERMAL METRIC(1) TMP42x-Q1 UNIT
DCN (SOT-23)
8 PINS
RθJA Junction-to-ambient thermal resistance 147 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 115 °C/W
RθJB Junction-to-board thermal resistance 33 °C/W
ψJT Junction-to-top characterization parameter 38 °C/W
ψJB Junction-to-board characterization parameter 33 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Electrical Characteristics

at TA = –40°C to +125°C and V+ = 2.7 V to 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TEMPERATURE ERROR
TELOCAL Local temperature sensor TA = –40°C to +125°C –2.5 ±1.25 2.5 °C
TA = 15°C to 85°C, V+ = 3.3 V –1.5 ±0.25 1.5
TEREMOTE Remote temperature sensor(1) TA = 15°C to 85°C, TD = –40°C to +150°C, V+ = 3.3 V –1 ±0.25 1 °C
TA = –40°C to +100°C, TD = –40°C to +150°C, V+ = 3.3 V –3 ±1 3
TA = –40°C to +125°C, TD = –40°C to +150°C –5 ±3 5
PSS Local and remote power-supply sensitivity V+ = 2.7 V to 5.5 V –0.5 ±0.2 0.5 °C/V
TEMPERATURE MEASUREMENT
Conversion time (per channel) 100 115 130 ms
Resolution Local temperature sensor (programmable) 12 Bits
Remote temperature sensor 12
Remote sensor source currents High, series resistance = 3 kΩ maximum 120 μA
Medium high 60
Medium low 12
Low 6
η Remote transistor ideality factor TMP42x-Q1 optimized ideality factor 1.008
SMBus INTERFACE
VIH Logic input high voltage (SCL, SDA) 2.1 V
VIL Logic input low voltage (SCL, SDA) 0.8 V
Hysteresis 500 mV
SMBus output low sink current 6 mA
VOL SDA output low voltage IOUT = 6 mA 0.15 0.4 V
Logic input current 0 ≤ VIN ≤ 6 V –1 1 μA
DIGITAL INPUTS
Input capacitance 3 pF
VIH Input logic high voltage 0.7(V+) (V+)+0.5 V
VIL Input logic low voltage –0.5 0.3(V+) V
IIN Leakage input current 0 V ≤ VIN ≤ V+ 1 μA
POWER SUPPLY
V+ Specified voltage range 2.7 5.5 V
IQ Quiescent current 0.0625 conversions per second 32 38 μA
Eight conversions per second 400 525 μA
Serial bus inactive, shutdown mode 3 10 μA
Serial bus active, fS = 400 kHz, shutdown mode 90 μA
Serial bus active, fS = 3.4 MHz, shutdown mode 350 μA
UVLO Undervoltage lockout 2.3 2.4 2.6 V
POR Power-on-reset threshold 1.6 2.3 V
Tested with less than 5-Ω effective series resistance and 100-pF differential input capacitance.

Timing Requirements

at –40°C to +125°C and V+ = 2.7 V to 5.5 V (unless otherwise noted); values are based on statistical analysis of samples tested during initial release
FAST MODE HIGH-SPEED MODE UNIT
MIN MAX MIN MAX
f(SCL) SCL operating frequency 0.001 0.4 0.001 2.56 MHz
t(BUF) Bus free time between STOP and START condition 1300 160 ns
t(HD;STA) Hold time after repeated START condition.
After this period, the first clock is generated.
600 160 ns
t(SU;STA) Repeated START condition setup time 600 160 ns
t(SU;STO) STOP condition setup time 600 160 ns
t(HD;DAT) Data hold time 25 See (1) 5 90 ns
t(VD.DAT) Data valid time (data response time)(2) 900 Not applicable ns
t(SU;DAT) Data setup time 100 10 ns
t(LOW) SCL clock LOW period 1300 250 ns
t(HIGH) SCL clock HIGH period 600 60 ns
tF – SDA Data fall time 300 150 ns
tF – SCL Clock fall time 300 40 ns
tR Clock, data rise time 1000 ns
Serial bus timeout 25 35 25 35 ms
The maximum tHD;DAT can be 0.9 μs for Fast-Mode, and is less than the maximum tVD;DAT by a transition time.
tVDDATA = time for data signal from SCL LOW to SDA output (HIGH to LOW, depending on which is worse).
TMP421-Q1 TMP422-Q1 TMP423-Q1 Tmng_ECTable.gif Figure 1. Two-Wire Timing Diagram

Typical Characteristics

at TA = 25°C and V+ = 5 V (unless otherwise noted)
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_rem_err-tmp_bos398.gif
Figure 2. Remote Temperature Error vs Temperature
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_rem_err-leak_bos398.gif
Figure 4. Remote Temperature Error vs Leakage Resistance
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_rem_err-gnd_bos398.gif
Figure 6. Remote Temperature Error vs Series Resistance
(GND Collector-Connected Transistor, 2N3906 PNP)
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_tmp_err-freq_bos398.gif
Figure 8. Temperature Error vs Power-Supply Noise Frequency
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_sd_iq-freq_bos398.gif
Figure 10. Shutdown Quiescent Current vs SCL Clock Frequency
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_local_err-tmp_bos398.gif
Figure 3. Local Temperature Error vs Temperature
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_rem_err-diode_bos398.gif
Figure 5. Remote Temperature Error vs Series Resistance
(Diode-Connected Transistor, 2N3906 PNP)
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_rem_err-dif_cap_bos398.gif
Figure 7. Remote Temperature Error vs Differential Capacitance
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_iq-conv_rate_bos398.gif
Figure 9. Quiescent Current vs Conversion Rate
TMP421-Q1 TMP422-Q1 TMP423-Q1 tc_sd_iq-vs_bos398.gif
Figure 11. Shutdown Quiescent Current vs Supply Voltage