PARAMETER |
MIN |
TYP |
MAX |
UNIT |
Program Time(1) |
|
128 data bits + 16 ECC bits |
|
150 |
300 |
µs |
|
8KB (Sector) |
|
50 |
100 |
ms |
Sector Erase Time(2)(3) |
< 25 cycles |
8KB (Sector) |
|
15 |
56 |
ms |
1k cycles |
|
26 |
133 |
ms |
2k cycles |
|
31 |
226 |
ms |
20k cycles |
|
123 |
1026 |
ms |
Bank
Erase Time(2)(3) |
< 25 cycles |
128KB (Bank) |
|
21 |
78 |
ms |
1k cycles |
|
35 |
183 |
ms |
2k cycles |
|
42 |
310 |
ms |
20k cycles |
|
169 |
1410 |
ms |
Nwec Write/Erase Cycles per Sector |
|
|
|
|
20000 |
cycles |
Nwec Write/Erase Cycles for Entire Flash (Combined for all Sectors) |
|
|
|
|
100000 |
cycles |
tretention Data retention duration at TJ = 85oC |
|
|
20 |
|
|
years |
(1) Program time is at the maximum device frequency. Program time includes overhead of the flash state machine but does not include the time to transfer the following into RAM:
• Code that uses flash API to program the flash
• Flash API itself
• Flash data to be programmed
In other words, the time indicated in this table is applicable after all the required code/data is available in the device RAM, ready for
programming. The transfer time will significantly vary depending on the speed of the JTAG debug probe used.
Program time calculation is based on programming 144 bits at a time at the specified operating frequency. Program time includes
Program verify by the CPU. The program time does not degrade with write/erase (W/E) cycling, but the erase time does.
Erase time includes Erase verify by the CPU and does not involve any data transfer.
(2) Erase time includes Erase verify by the CPU.
(3) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.