SPRS945G January 2017 – January 2023 TMS320F280040-Q1 , TMS320F280040C-Q1 , TMS320F280041 , TMS320F280041-Q1 , TMS320F280041C , TMS320F280041C-Q1 , TMS320F280045 , TMS320F280048-Q1 , TMS320F280048C-Q1 , TMS320F280049 , TMS320F280049-Q1 , TMS320F280049C , TMS320F280049C-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
General | ||||||
CVDDIO | Bulk capacitance on VDDIO | Based on External Supply IC Requirements(1) | 0.1 | µF | ||
CVDDIO_DECAP | Decoupling capacitor on each VDDIO pin | 0.1 | µF | |||
CVDDA | Capacitor on VDDA pins | 2.2 | µF | |||
CVDDIO_SW | Capacitor on VDDIO_SW pin | For DC-DC operation(2) | 20 | µF | ||
For LDO-only operation | 0.1 | |||||
CVDD | Bulk capacitance on VDD | For DC-DC operation(2) | 20 | µF | ||
For LDO-only operation(3) | 12 | 20 | 27 | |||
CVDD_DECAP | Decoupling capacitor on each VDD pin | For DC-DC operation(2) | 0.1 | µF | ||
For LDO-only operation(3) | 0.1 | 6.75 | ||||
LVSW | Inductor between VSW pin and VDD node for DC-DC | 2.2 | µH | |||
RLVSW-DCR | Allowed DCR for LVSW | 80 | mΩ | |||
ISAT-LVSW | LVSW saturation current | 600 | mA | |||
SRVDDIO-UP(5) | Supply Ramp Up Rate of 3.3V Rail (VDDIO) | 8 | 100 | mV/μs | ||
SRVDDIO-DN(5) | Supply Ramp Down Rate of 3.3V Rail (VDDIO) | 20 | 100 | mV/μs | ||
External VREG | ||||||
CVDD TOTAL(4)(6) | Total VDD Capacitance(8) | 10 | μF | |||
SRVDD-UP(5) | Supply Ramp Up Rate of 1.2V Rail (VDD) | 3.5 | 100 | mV/μs | ||
SRVDD-DN(5) | Supply Ramp Down Rate of 1.2V Rail (VDD) | 10 | 100 | mV/μs | ||
VDDIO - VDD Delay(7) | Ramp Delay Between VDDIO and VDD | 0 | No Restrictions | μs |