6.2.1 Important Considerations

• The voltage monitor does not eliminate the need of a voltage supervisor circuit to guarantee that the device is held in reset when the voltage supplies are out of range.
• The voltage monitor only monitors the core supply (VCC) and the I/O supply (VCCIO). The other supplies are not monitored by the VMON. For example, if the VCCAD or VCCP are supplied from a source different from that for VCCIO, then there is no internal voltage monitor for the VCCAD and VCCP supplies.

6.2.2 Voltage Monitor Operation

The voltage monitor generates the Power Good MCU signal (PGMCU) as well as the I/Os Power Good IO signal (PGIO) on the device. During power-up or power-down processes, the PGMCU and PGIO are driven low when the core or I/O supplies are lower than the specified minimum monitoring thresholds. The PGIO and PGMCU being low isolates the core logic as well as the I/O controls during power up or power down of the supplies. This allows the core and I/O supplies to be powered up or down in any order.

When the voltage monitor detects a low voltage on the I/O supply, it will assert a power-on reset. When the voltage monitor detects an out-of-range voltage on the core supply, it asynchronously makes all output pins high impedance, and asserts a power-on reset. The voltage monitor is disabled when the device enters a low-power mode.

The VMON also incorporates a glitch filter for the nPORRST input. Refer to Section 6.3.3.1 for the timing information on this glitch filter.

6.2.3 Supply Filtering

The VMON has the capability to filter glitches on the VCC and VCCIO supplies.

Table 6-2 shows the characteristics of the supply filtering. Glitches in the supply larger than the maximum specification cannot be filtered.

6.3.1 Power-Up Sequence

There is no timing dependency between the ramp of the VCCIO and the VCC supply voltage. The power-up sequence starts with the I/O voltage rising above the minimum I/O supply threshold, (see Table 6-4 for more details), core voltage rising above the minimum core supply threshold and the release of power-on reset. The high-frequency oscillator will start up first and its amplitude will grow to an acceptable level. The oscillator start up time is dependent on the type of oscillator and is provided by the oscillator vendor. The different supplies to the device can be powered up in any order.

The device goes through the following sequential phases during power up.

The CPU reset is released at the end of the sequence in Table 6-3 and fetches the first instruction from address 0x00000000.

6.3.2 Power-Down Sequence

The different supplies to the device can be powered down in any order.

6.3.3 Power-On Reset: nPORRST

This is the power-on reset. This reset must be asserted by an external circuitry whenever the I/O or core supplies are outside the specified recommended range. This signal has a glitch filter on it. It also has an internal pulldown.

6.3.3.1 nPORRST Electrical and Timing Requirements

Table 6-4 Electrical Requirements for nPORRST

NO.	PARAMETER		MIN	MAX	UNIT
	VCCPORL	VCC low supply level when nPORRST must be active during power up		0.5	V
	VCCPORH	VCC high supply level when nPORRST must remain active during power up and become active during power down	1.14		V
	VCCIOPORL	VCCIO / VCCP low supply level when nPORRST must be active during power up		1.1	V
	VCCIOPORH	VCCIO / VCCP high supply level when nPORRST must remain active during power up and become active during power down	3.0		V
	VIL(PORRST)	Low-level input voltage of nPORRST VCCIO > 2.5V		0.2 * VCCIO	V
		Low-level input voltage of nPORRST VCCIO < 2.5V		0.5	V
3	tsu(PORRST)	Setup time, nPORRST active before VCCIO and VCCP > VCCIOPORL during power up	0		ms
6	th(PORRST)	Hold time, nPORRST active after VCC > VCCPORH	1		ms
7	tsu(PORRST)	Setup time, nPORRST active before VCC < VCCPORH during power down	2		µs
8	th(PORRST)	Hold time, nPORRST active after VCCIO and VCCP > VCCIOPORH	1		ms
9	th(PORRST)	Hold time, nPORRST active after VCC < VCCPORL	0		ms
	tf(nPORRST)	Filter time nPORRST pin; pulses less than MIN will be filtered out, pulses greater than MAX will generate a reset.	500	2000	ns

Figure 6-1 nPORRST Timing Diagram

6.4.1 Causes of Warm Reset

6.4.2 nRST Timing Requirements

6.5.1 Summary of ARM Cortex-R4F CPU Features

The features of the ARM Cortex-R4F CPU include:

• An integer unit with integral EmbeddedICE-RT logic.
• High-speed Advanced Microprocessor Bus Architecture (AMBA) Advanced eXtensible Interfaces (AXI) for Level two (L2) master and slave interfaces.
• Floating Point Coprocessor
• Dynamic branch prediction with a global history buffer, and a 4-entry return stack
• Low interrupt latency.
• Nonmaskable interrupt.
• A Harvard Level one (L1) memory system with:
  • Tightly Coupled Memory (TCM) interfaces with support for error correction or parity checking memories
  • ARMv7-R architecture Memory Protection Unit (MPU) with 12 regions
• Dual core logic for fault detection in safety-critical applications.
• An L2 memory interface:
  • Single 64-bit master AXI interface
  • 64-bit slave AXI interface to TCM RAM blocks
• A debug interface to a CoreSight Debug Access Port (DAP).
• Six Hardware Breakpoints
• Two Watchpoints
• A trace interface to a CoreSight ETM-R4.
• A Performance Monitoring Unit (PMU).
• A Vectored Interrupt Controller (VIC) port.

For more information on the ARM Cortex-R4F CPU see www.arm.com.

6.5.2 ARM Cortex-R4F CPU Features Enabled by Software

The following CPU features are disabled on reset and must be enabled by the application if required.

• ECC On TCM Accesses
• Hardware VIC Port
• Floating Point Coprocessor
• MPU

6.5.3 Dual Core Implementation

The device has two Cortex-R4F cores, where the output signals of both CPUs are compared in the CCM-R4 unit. To avoid common mode impacts the signals of the CPUs to be compared are delayed by two clock cycles as shown in Figure 6-3.

6.5.4 Duplicate Clock Tree After GCLK

The CPU clock domain is split into two clock trees, one for each CPU, with the clock of the second CPU running at the same frequency and in phase to the clock of CPU1. See Figure 6-3.

6.5.5 ARM Cortex-R4F CPU Compare Module (CCM-R4) for Safety

This device has two ARM Cortex-R4F CPU cores, where the output signals of both CPUs are compared in the CCM-R4 unit. To avoid common mode impacts the signals of the CPUs to be compared are delayed in a different way as shown in Figure 6-3.

Figure 6-3 Dual Core Implementation

To avoid an erroneous CCM-R4 compare error, the application software must initialize the registers of both CPUs before the registers are used, including function calls where the register values are pushed onto the stack.

6.5.6 CPU Self-Test

The CPU STC (Self-Test Controller) is used to test the two Cortex-R4F CPU Cores using the Deterministic Logic BIST Controller as the test engine.

The main features of the self-test controller are:

• Ability to divide the complete test run into independent test intervals
• Capable of running the complete test as well as running few intervals at a time
• Ability to continue from the last executed interval (test set) as well as ability to restart from the beginning (First test set)
• Complete isolation of the self-tested CPU core from rest of the system during the self-test run
• Ability to capture the Failure interval number
• Time-out counter for the CPU self-test run as a fail-safe feature

6.6.1 Clock Sources

Table 6-8 lists the available clock sources on the device. Each of the clock sources can be enabled or disabled using the CSDISx registers in the system module. The clock source number in the table corresponds to the control bit in the CSDISx register for that clock source.

Table 6-8 also shows the default state of each clock source.

6.6.1.1 Main Oscillator

The oscillator is enabled by connecting the appropriate fundamental resonator/crystal and load capacitors across the external OSCIN and OSCOUT pins as shown in Figure 6-4. The oscillator is a single stage inverter held in bias by an integrated bias resistor. This resistor is disabled during leakage test measurement and low power modes.

TI strongly encourages each customer to submit samples of the device to the resonator/crystal vendors for validation. The vendors are equipped to determine what load capacitors will best tune their resonator/crystal to the microcontroller device for optimum start-up and operation over temperature/voltage extremes.

An external oscillator source can be used by connecting a 3.3-V clock signal to the OSCIN pin and leaving the OSCOUT pin unconnected (open) as shown in Figure 6-4.

Figure 6-4 Recommended Crystal/Clock Connection

6.6.1.1.1 Timing Requirements for Main Oscillator

Table 6-9 Timing Requirements for Main Oscillator

		MIN	MAX	UNIT
tc(OSC)	Cycle time, OSCIN (when using a sine-wave input)	50	200	ns
tc(OSC_SQR)	Cycle time, OSCIN, (when input to the OSCIN is a square wave )	50	200	ns
tw(OSCIL)	Pulse duration, OSCIN low (when input to the OSCIN is a square wave)	6		ns
tw(OSCIH)	Pulse duration, OSCIN high (when input to the OSCIN is a square wave)	6		ns

6.6.1.2 Low-Power Oscillator (LPO)

The LPO is comprised of two oscillators — HF LPO and LF LPO, in a single macro.

6.6.1.2.1 Features

The main features of the LPO are:

• Supplies a clock at extremely low power for power-saving modes. This is connected as clock source # 4 of the GCM.
• Supplies a high-frequency clock for nontiming-critical systems. This is connected as clock source # 5 of the GCM.
• Provides a comparison clock for the crystal oscillator failure detection circuit.

Figure 6-5 LPO Block Diagram

Figure 6-5 shows a block diagram of the internal reference oscillator. This is an LPO and provides two clock sources: one nominally 80 kHz and one nominally 10 MHz.

6.6.1.2.2 LPO Electrical and Timing Specifications

Table 6-10 LPO Specifications

PARAMETER		MIN	TYP	MAX	UNIT
Clock Detection	Oscillator fail frequency - lower threshold, using untrimmed LPO output	1.375	2.4	4.875	MHz
	Oscillator fail frequency - higher threshold, using untrimmed LPO output	22	38.4	78
LPO - HF oscillator (fHFLPO)	Untrimmed frequency	5.5	9	19.5
	Trimmed frequency	8	9.6	11	MHz
	Start-up time from STANDBY (LPO BIAS_EN High for at least 900 µs)			10	µs
	Cold start-up time			900	µs
LPO - LF oscillator (fLFLPO)	Untrimmed frequency	36	85	180	kHz
	Start-up time from STANDBY (LPO BIAS_EN High for at least 900 µs)			100	µs
	Cold start-up time			2000	µs

6.6.1.3 Phase Locked Loop (PLL) Clock Modules

The PLL is used to multiply the input frequency to some higher frequency.

The main features of the PLL are:

• Frequency modulation can be optionally superimposed on the synthesized frequency of PLL1. The frequency modulation capability of PLL2 is permanently disabled.
• Configurable frequency multipliers and dividers.
• Built-in PLL Slip monitoring circuit.
• Option to reset the device on a PLL slip detection.

6.6.1.3.1 Block Diagram

Figure 6-6 shows a high-level block diagram of the two PLL macros on this microcontroller. PLLCTL1 and PLLCTL2 are used to configure the multiplier and dividers for the PLL1. PLLCTL3 is used to configure the multiplier and dividers for PLL2.

Figure 6-6 ZWT PLLx Block Diagram

6.6.1.3.2 PLL Timing Specifications

Table 6-11 PLL Timing Specifications

PARAMETER		MIN	MAX	UNIT
fINTCLK	PLL1 Reference Clock frequency	1	20	MHz
fpost_ODCLK	Post-ODCLK – PLL1 Post-divider input clock frequency		400	MHz
fVCOCLK	VCOCLK – PLL1 Output Divider (OD) input clock frequency	150	550	MHz
fINTCLK2	PLL2 Reference Clock frequency	1	20	MHz
fpost_ODCLK2	Post-ODCLK – PLL2 Post-divider input clock frequency		400	MHz
fVCOCLK2	VCOCLK – PLL2 Output Divider (OD) input clock frequency	150	550	MHz

6.6.2 Clock Domains

6.6.2.2 Mapping of Clock Domains to Device Modules

Each clock domain has a dedicated functionality as shown in Figure 6-7.

Figure 6-7 Device Clock Domains

6.6.3 Clock Test Mode

The TMS570 platform architecture defines a special mode that allows various clock signals to be brought out on to the ECLK pin and N2HET1[12] device outputs. This mode is called the Clock Test mode. It is very useful for debugging purposes and can be configured through the CLKTEST register in the system module.

6.7.1 Clock Monitor Timings

For more information on LPO and Clock detection, refer to Table 6-10.

Figure 6-8 LPO and Clock Detection, Untrimmed HFLPO

6.7.2 External Clock (ECLK) Output Functionality

The ECLK pin can be configured to output a prescaled clock signal indicative of an internal device clock. This output can be externally monitored as a safety diagnostic.

6.7.3 Dual Clock Comparators

The Dual Clock Comparator (DCC) module determines the accuracy of selectable clock sources by counting the pulses of two independent clock sources (counter 0 and counter 1). If one clock is out of spec, an error signal is generated. For example, the DCC1 can be configured to use CLK10M as the reference clock (for counter 0) and VCLK as the "clock under test" (for counter 1). This configuration allows the DCC1 to monitor the PLL output clock when VCLK is using the PLL output as its source.

An additional use of this module is to measure the frequency of a selectable clock source, using the input clock as a reference, by counting the pulses of two independent clock sources. Counter 0 generates a fixed-width counting window after a preprogrammed number of pulses. Counter 1 generates a fixed-width pulse (1 cycle) after a preprogrammed number of pulses. This pulse sets as an error signal if counter 1 does not reach 0 within the counting window generated by counter 0.

Table 6-19 Glitch Filter Timing Specifications

6.9.1 Memory Map Diagram

The figures below show the device memory maps.

Figure 6-9 TMS570LS3134 Memory Map

Figure 6-10 TMS570LS2134 Memory Map

Figure 6-11 TMS570LS2124 Memory Map

The Flash memory is mirrored to support ECC logic testing. The base address of the mirrored Flash image is 0x20000000.

6.9.2 Memory Map Table

6.9.3 Master/Slave Access Privileges

Table 6-21 lists the access permissions for each bus master on the device. A bus master is a module that can initiate a read or a write transaction on the device.

Each slave module on the main interconnect is listed in the table. A "Yes" indicates that the module listed in the "MASTERS" column can access that slave module.

6.9.4 POM Overlay Considerations

• The POM overlay can map onto up to 8MB of the internal or external memory space. The starting address and the size of the memory overlay are configurable via the POM module control registers. Care must be taken to ensure that the overlay is mapped on to available memory.
• ECC must be disabled by software via CP15 in case POM overlay is enabled; otherwise ECC errors will be generated.
• POM overlay must not be enabled when the flash and internal RAM memories are swapped via the MEM SWAP field of the Bus Matrix Module Control Register 1 (BMMCR1).
• When POM is used to overlay the flash onto internal or external RAM, there is a bus contention possibility when another master accesses the TCM flash. This results in a system hang.
  • The POM module implements a time-out feature to detect this exact scenario. The time-out needs to be enabled whenever POM overlay is enabled.
  • The time-out can be enabled by writing 1010 to the Enable TimeOut (ETO) field of the POM Global Control register (POMGLBCTRL, address = 0xFFA04000).
  • In case a read request by the POM cannot be completed within 32 HCLK cycles, the time-out (TO) flag is set in the POM Flag register (POMFLG, address = 0xFFA0400C). Also, an abort is generated to the CPU. This can be a prefetch abort for an instruction fetch or a data abort for a data fetch.
  • The prefetch- and data-abort handlers must be modified to check if the TO flag in the POM module is set. If so, then the application can assume that the time-out is caused by a bus contention between the POM transaction and another master accessing the same memory region. The abort handlers need to clear the TO flag, so that any further aborts are not misinterpreted as having been caused due to a time-out from the POM.

6.10.1 Flash Memory Configuration

Flash Bank: A separate block of logic consisting of 1 to 16 sectors. Each flash bank normally has a customer-OTP and a TI-OTP area. These flash sectors share input/output buffers, data paths, sense amplifiers, and control logic.

Flash Sector: A contiguous region of flash memory which must be erased simultaneously due to physical construction constraints.

Flash Pump: A charge pump which generates all the voltages required for reading, programming, or erasing the flash banks.

Flash Module: Interface circuitry required between the host CPU and the flash banks and pump module.

6.10.2 Main Features of Flash Module

• Support for multiple flash banks for program and/or data storage
• Simultaneous read access on a bank while performing program or erase operation on any other bank
• Integrated state machines to automate flash erase and program operations
• Software interface for flash program and erase operations
• Pipelined mode operation to improve instruction access interface bandwidth
• Support for Single Error Correction Double Error Detection (SECDED) block inside Cortex-R4F CPU
  • Error address is captured for host system debugging
• Support for a rich set of diagnostic features

6.10.3 ECC Protection for Flash Accesses

All accesses to the program flash memory are protected by Single Error Correction Double Error Detection (SECDED) logic embedded inside the CPU. The flash module provides 8 bits of ECC code for 64 bits of instructions or data fetched from the flash memory. The CPU calculates the expected ECC code based on the 64 bits received and compares it with the ECC code returned by the flash module. A single-bit error is corrected and flagged by the CPU, while a multibit error is only flagged. The CPU signals an ECC error via its Event bus. This signaling mechanism is not enabled by default and must be enabled by setting the 'X' bit of the Performance Monitor Control Register, c9.

The application must also explicitly enable the CPU's ECC checking for accesses on the CPU's ATCM and BTCM interfaces. These are connected to the program flash and data RAM respectively. ECC checking for these interfaces can be done by setting the B1TCMPCEN, B0TCMPCEN and ATCMPCEN bits of the System Control coprocessor's Auxiliary Control Register, c1.

6.10.4 Flash Access Speeds

For information on flash memory access speeds and the relevant wait states required, refer to Section 5.6.

6.10.5 Flash Program and Erase Timings for Program Flash

6.10.6 Flash Program and Erase Timings for Data Flash

6.11.1 Features

The features of the TCRAM Module are:

• Acts as slave to the BTCM interface of the Cortex-R4F CPU
• Supports CPU's internal ECC scheme by providing 64-bit data and 8-bit ECC code
• Monitors CPU Event Bus and generates single or multibit error interrupts
• Stores addresses for single and multibit errors
• Supports RAM trace module
• Provides CPU address bus integrity checking by supporting parity checking on the address bus
• Performs redundant address decoding for the RAM bank chip select and ECC select generation logic
• Provides enhanced safety for the RAM addressing by implementing two 36-bit-wide byte-interleaved RAM banks and generating independent RAM access control signals to the two banks
• Supports auto-initialization of the RAM banks along with the ECC bits
• No support for bit-wise RAM accesses

6.11.2 TCRAM Interface ECC Support

The TCRAM interface passes on the ECC code for each data read by the Cortex-R4F CPU from the RAM. It also stores the ECC port contents of the CPU in the ECC RAM when the CPU does a write to the RAM. The TCRAM interface monitors the event bus of the CPU and provides registers for indicating singlebit or multibit errors and also for identifying the address that caused the single or multibit error. The event signaling and the ECC checking for the RAM accesses must be enabled inside the CPU.

For more information see the device specific technical reference manual.

6.13.1 On-Chip SRAM Self-Test Using PBIST

6.13.2 On-Chip SRAM Auto Initialization

This microcontroller allows some of the on-chip memories to be initialized to zero through the Memory Hardware Initialization mechanism in the System module. This hardware mechanism allows an application to program the memory arrays with error detection capability to a known state based on their error detection scheme (odd/even parity or ECC).

The MINITGCR register enables the memory initialization sequence, and the MSINENA register selects the memories that are to be initialized.

For more information on these registers see the device specific technical reference manual.

The mapping of the different on-chip memories to the specific bits of the MSINENA registers is shown in Table 6-26.

6.14.1 Features

The EMIF includes many features to enhance the ease and flexibility of connecting to external asynchronous memories or SDRAM devices. The EMIF features includes support for:

• 3 addressable chip select for asynchronous memories of up to 16MB each
• 1 addressable chip select space for SDRAMs up to 128MB
• 8- or 16-bit data bus width
• Programmable cycle timings such as setup, strobe, and hold times as well as turnaround time
• Select strobe mode
• Extended Wait mode
• Data bus parking

6.14.2 Electrical and Timing Specifications

6.14.2.1 Asynchronous RAM

Figure 6-13 Asynchronous Memory Read Timing

Figure 6-14 EMIFnWAIT Read Timing Requirements

Figure 6-15 Asynchronous Memory Write Timing

Figure 6-16 EMIFnWAIT Write Timing Requirements

Table 6-27 EMIF Asynchronous Memory Timing Requirements

NO.			MIN	NOM	MAX	UNIT
READS AND WRITES
	E	EMIF clock period	11			ns
2	tw(EM_WAIT)	Pulse duration, EMIFnWAIT assertion and deassertion	2E			ns
READS
12	tsu(EMDV-EMOEH)	Setup time, EMIFDATA[15:0] valid before EMIFnOE high	30			ns
13	th(EMOEH-EMDIV)	Hold time, EMIFDATA[15:0] valid after EMIFnOE high	0.5			ns
14	tsu(EMOEL-EMWAIT)	Setup Time, EMIFnWAIT asserted before end of Strobe Phase(1)	4E+30			ns
WRITES
28	tsu(EMWEL-EMWAIT)	Setup Time, EMIFnWAIT asserted before end of Strobe Phase(1)	4E+30			ns

(1) Setup before end of STROBE phase (if no extended wait states are inserted) by which EMIFnWAIT must be asserted to add extended wait states. Figure 6-14 and Figure 6-16 describe EMIF transactions that include extended wait states inserted during the STROBE phase. However, cycles inserted as part of this extended wait period should not be counted; the 4E requirement is to the start of where the HOLD phase would begin if there were no extended wait cycles.

Table 6-28 EMIF Asynchronous Memory Switching Characteristics^(1)(2)(3)

NO.	PARAMETER		MIN	NOM	MAX	UNIT
READS AND WRITES
1	td(TURNAROUND)	Turn around time	(TA)*E-4	(TA)*E	(TA)*E+3	ns
READS
3	tc(EMRCYCLE)	EMIF read cycle time (EW = 0)	(RS+RST+RH)*E-3	(RS+RST+RH)*E	(RS+RST+RH)*E+3	ns
		EMIF read cycle time (EW = 1)	(RS+RST+RH+(EWC*16))* E-3	(RS+RST+RH+(EWC*16))* E	(RS+RST+RH+(EWC*16))* E+3
4	tsu(EMCEL-EMOEL)	Output setup time, EMIFnCS[4:2] low to EMIFnOE low (SS = 0)	(RS)*E-4	(RS)*E	(RS)*E+3	ns
		Output setup time, EMIFnCS[4:2] low to EMIFnOE low (SS = 1)	-3	0	+3
5	th(EMOEH-EMCEH)	Output hold time, EMIFnOE high to EMIFnCS[4:2] high (SS = 0)	(RH)*E-4	(RH)*E	(RH)*E+3	ns
		Output hold time, EMIFnOE high to EMIFnCS[4:2] high (SS = 1)	-3	0	+3
6	tsu(EMBAV-EMOEL)	Output setup time, EMIFBA[1:0] valid to EMIFnOE low	(RS)*E-4	(RS)*E	(RS)*E+3	ns
7	th(EMOEH-EMBAIV)	Output hold time, EMIFnOE high to EMIFBA[1:0] invalid	(RH)*E-4	(RH)*E	(RH)*E+3	ns
8	tsu(EMAV-EMOEL)	Output setup time, EMIFADDR[21:0] valid to EMIFnOE low	(RS)*E-4	(RS)*E	(RS)*E+3	ns
9	th(EMOEH-EMAIV)	Output hold time, EMIFnOE high to EMIFADDR[21:0] invalid	(RH)*E-4	(RH)*E	(RH)*E+3	ns
10	tw(EMOEL)	EMIFnOE active low width (EW = 0)	(RST)*E-3	(RST)*E	(RST)*E+3	ns
		EMIFnOE active low width (EW = 1)	(RST+(EWC*16))*E-3	(RST+(EWC*16))*E	(RST+(EWC*16))*E+3
11	td(EMWAITH-EMOEH)	Delay time from EMIFnWAIT deasserted to EMIFnOE high	3E-3	4E	4E+30	ns
29	tsu(EMDQMV-EMOEL)	Output setup time, EMIFnDQM[1:0] valid to EMIFnOE low	(RS)*E-4	(RS)*E	(RS)*E+3	ns
30	th(EMOEH-EMDQMIV)	Output hold time, EMIFnOE high to EMIFnDQM[1:0] invalid	(RH)*E-4	(RH)*E	(RH)*E+3	ns
WRITES
15	tc(EMWCYCLE)	EMIF write cycle time (EW = 0)	(WS+WST+WH)* E-3	(WS+WST+WH)*E	(WS+WST+WH)* E+3	ns
		EMIF write cycle time (EW = 1)	(WS+WST+WH+(EWC*16))* E-3	(WS+WST+WH+(EWC*16))* E	(WS+WST+WH+(EWC*16))* E+3
16	tsu(EMCEL-EMWEL)	Output setup time, EMIFnCS[4:2] low to EMIFnWE low (SS = 0)	(WS)*E -4	(WS)*E	(WS)*E + 3	ns
		Output setup time, EMIFnCS[4:2] low to EMIFnWE low (SS = 1)	-4	0	+3
17	th(EMWEH-EMCEH)	Output hold time, EMIFnWE high to EMIFnCS[4:2] high (SS = 0)	(WH)*E-4	(WH)*E	(WH)*E+3	ns
		Output hold time, EMIFnWE high to EMIFCS[4:2] high (SS = 1)	-4	0	+3
18	tsu(EMDQMV-EMWEL)	Output setup time, EMIFBA[1:0] valid to EMIFnWE low	(WS)*E-4	(WS)*E	(WS)*E+3	ns
19	th(EMWEH-EMDQMIV)	Output hold time, EMIFnWE high to EMIFBA[1:0] invalid	(WH)*E-4	(WH)*E	(WH)*E+3	ns
20	tsu(EMBAV-EMWEL)	Output setup time, EMIFBA[1:0] valid to EMIFnWE low	(WS)*E-4	(WS)*E	(WS)*E+3	ns
21	th(EMWEH-EMBAIV)	Output hold time, EMIFnWE high to EMIFBA[1:0] invalid	(WH)*E-4	(WH)*E	(WH)*E+3	ns
22	tsu(EMAV-EMWEL)	Output setup time, EMIFADDR[21:0] valid to EMIFnWE low	(WS)*E-4	(WS)*E	(WS)*E+3	ns
23	th(EMWEH-EMAIV)	Output hold time, EMIFnWE high to EMIFADDR[21:0] invalid	(WH)*E-4	(WH)*E	(WH)*E+3	ns
24	tw(EMWEL)	EMIFnWE active low width (EW = 0)	(WST)*E-3	(WST)*E	(WST)*E+3	ns
		EMIFnWE active low width (EW = 1)	(WST+(EWC*16))*E-3	(WST+(EWC*16))*E	(WST+(EWC*16))* E+3
25	td(EMWAITH-EMWEH)	Delay time from EMIFnWAIT deasserted to EMIFnWE high	3E-4	4E	4E+30	ns
26	tsu(EMDV-EMWEL)	Output setup time, EMIFDATA[15:0] valid to EMIFnWE low	(WS)*E-4	(WS)*E	(WS)*E+3	ns
27	th(EMWEH-EMDIV)	Output hold time, EMIFnWE high to EMIFDATA[15:0] invalid	(WH)*E-4	(WH)*E	(WH)*E+3	ns
31	tsu(EMDQMV-EMWEL)	Output setup time, EMIFnDQM[1:0] valid to EMIFnWE low	(WH)*E-4	(WH)*E	(WH)*E+3	ns
32	th(EMWEH-EMDQMIV)	Output hold time, EMIFnWE high to EMIFnDQM[1:0] invalid	(WH)*E-4	(WH)*E	(WH)*E+3	ns

(1) TA = Turn around, RS = Read setup, RST = Read strobe, RH = Read hold, WS = Write setup, WST = Write strobe, WH = Write hold, MEWC = Maximum external wait cycles. These parameters are programmed via the Asynchronous Bank and Asynchronous Wait Cycle Configuration Registers. These support the following ranges of values: TA[4–1], RS[16–1], RST[64–1], RH[8–1], WS[16–1], WST[64–1], WH[8–1], and MEWC[1–256]. See the TMS570LS31x/21x Technical Reference Manual (SPNU499) for more information.

(2) E = EMIF_CLK period in ns.

(3) EWC = external wait cycles determined by EMIFnWAIT input signal. EWC supports the following range of values. EWC[256–1]. Note that the maximum wait time before time-out is specified by bit field MEWC in the Asynchronous Wait Cycle Configuration Register. See the TMS570LS31x/21x Technical Reference Manual (SPNU499) for more information.

6.14.2.2 Synchronous Timing

Figure 6-17 Basic SDRAM Read Operation

Figure 6-18 Basic SDRAM Write Operation

Table 6-29 EMIF Synchronous Memory Timing Requirements

NO.			MIN	MAX	UNIT
19	tsu(EMIFDV-EM_CLKH)	Input setup time, read data valid on EMIFDATA[15:0] before EMIF_CLK rising	2		ns
20	th(CLKH-DIV)	Input hold time, read data valid on EMIFDATA[15:0] after EMIF_CLK rising	1.5		ns

Table 6-30 EMIF Synchronous Memory Switching Characteristics

NO.	PARAMETER		MIN	MAX	UNIT
1	tc(CLK)	Cycle time, EMIF clock EMIF_CLK	20		ns
2	tw(CLK)	Pulse width, EMIF clock EMIF_CLK high or low	5		ns
3	td(CLKH-CSV)	Delay time, EMIF_CLK rising to EMIFnCS[0] valid		13	ns
4	toh(CLKH-CSIV)	Output hold time, EMIF_CLK rising to EMIFnCS[0] invalid	1		ns
5	td(CLKH-DQMV)	Delay time, EMIF_CLK rising to EMIFnDQM[1:0] valid		13	ns
6	toh(CLKH-DQMIV)	Output hold time, EMIF_CLK rising to EMIFnDQM[1:0] invalid	1		ns
7	td(CLKH-AV)	Delay time, EMIF_CLK rising to EMIFADDR[21:0] and EMIFBA[1:0] valid		13	ns
8	toh(CLKH-AIV)	Output hold time, EMIF_CLK rising to EMIFADDR[21:0] and EMIFBA[1:0] invalid	1		ns
9	td(CLKH-DV)	Delay time, EMIF_CLK rising to EMIFDATA[15:0] valid		13	ns
10	toh(CLKH-DIV)	Output hold time, EMIF_CLK rising to EMIFDATA[15:0] invalid	1		ns
11	td(CLKH-RASV)	Delay time, EMIF_CLK rising to EMIFnRAS valid		13	ns
12	toh(CLKH-RASIV)	Output hold time, EMIF_CLK rising to EMIFnRAS invalid	1		ns
13	td(CLKH-CASV)	Delay time, EMIF_CLK rising to EMIFnCAS valid		13	ns
14	toh(CLKH-CASIV)	Output hold time, EMIF_CLK rising to EMIFnCAS invalid	1		ns
15	td(CLKH-WEV)	Delay time, EMIF_CLK rising to EMIFnWE valid		13	ns
16	toh(CLKH-WEIV)	Output hold time, EMIF_CLK rising to EMIFnWE invalid	1		ns
17	tdis(CLKH-DHZ)	Delay time, EMIF_CLK rising to EMIFDATA[15:0] tri-stated		7	ns
18	tena(CLKH-DLZ)	Output hold time, EMIF_CLK rising to EMIFDATA[15:0] driving	1		ns

6.15.1 VIM Features

The VIM module has the following features:

• Supports 96 interrupt channels.
  • Provides programmable priority and enable for interrupt request lines.
• Provides a direct hardware dispatch mechanism for fastest IRQ dispatch.
• Provides two software dispatch mechanisms when the CPU VIC port is not used.
  • Index interrupt
  • Register vectored interrupt
• Parity protected vector interrupt table

6.15.2 Interrupt Request Assignments

6.16.1 DMA Features

• CPU independent data transfer
• One master port - PortB (64 bits wide) that interfaces to the TMS570 Memory System.
• FIFO buffer (4 entries deep and each 64 bits wide)
• Channel control information is stored in RAM protected by parity
• 16 channels with individual enable
• Channel chaining capability
• 32 peripheral DMA requests
• Hardware and Software DMA requests
• 8-, 16-, 32-, or 64-bit transactions supported
• Multiple addressing modes for source/destination (fixed, increment, offset)
• Auto-initiation
• Power-management mode
• Memory Protection with four configurable memory regions

6.16.2 Default DMA Request Map

The DMA module on this microcontroller has 16 channels and up to 32 hardware DMA requests. The module contains DREQASIx registers which are used to map the DMA requests to the DMA channels. By default, channel 0 is mapped to request 0, channel 1 to request 1, and so on.

Some DMA requests have multiple sources, as shown in Table 6-32. The application must ensure that only one of these DMA request sources is enabled at any time.

6.17.1 Features

The RTI module has the following features:

• Two independent 64 bit counter blocks
• Four configurable compares for generating operating system ticks or DMA requests. Each event can be driven by either counter block 0 or counter block 1.
• Fast enabling/disabling of events
• Two time-stamp (capture) functions for system or peripheral interrupts, one for each counter block

6.17.2 Block Diagrams

Figure 6-19 shows a high-level block diagram for one of the two 64-bit counter blocks inside the RTI module. Both the counter blocks are identical except the Network Time Unit (NTUx) inputs are only available as time base inputs for the counter block 0.

Figure 6-19 Counter Block Diagram

Figure 6-20 Compare Block Diagram

6.17.3 Clock Source Options

The RTI module uses the RTI1CLK clock domain for generating the RTI time bases.

The application can select the clock source for the RTI1CLK by configuring the RCLKSRC register in the System module at address 0xFFFFFF50. The default source for RTI1CLK is VCLK.

For more information on clock sources refer to Table 6-8 and Table 6-13.

6.17.4 Network Time Synchronization Inputs

The RTI module supports four NTU inputs that signal internal system events, and which can be used to synchronize the time base used by the RTI module. On this device, these NTU inputs are connected as shown in Table 6-33.

6.18.1 Features

The features of the ESM are:

• 128 interrupt/error channels are supported, divided into 3 different groups
  • 64 channels with maskable interrupt and configurable error pin behavior
  • 32 error channels with nonmaskable interrupt and predefined error pin behavior
  • 32 channels with predefined error pin behavior only
• Error pin to signal severe device failure
• Configurable time base for error signal
• Error forcing capability

6.18.2 ESM Channel Assignments

The ESM integrates all the device error conditions and groups them in the order of severity. Group1 is used for errors of the lowest severity while Group3 is used for errors of the highest severity. The device response to each error is determined by the severity group it is connected to. Table 6-35 shows the channel assignment for each group.

Table 6-36 Reset/Abort/Error Sources

6.21.1 Block Diagram

The device contains an ICEPICK module to allow JTAG access to the scan chains (see Figure 6-21).

Figure 6-21 Debug Subsystem Block Diagram

6.21.2 Debug Components Memory Map

6.21.3 JTAG Identification Code

The JTAG ID code for this device is the same as the device ICEPick Identification Code (see Table 6-38).

6.21.4 Debug ROM

The Debug ROM stores the location of the components on the Debug APB bus (see Table 6-39).

6.21.5 JTAG Scan Interface Timings

Figure 6-22 JTAG Timing

6.21.6 Advanced JTAG Security Module

This device includes an Advanced JTAG Security Module (AJSM) which provides maximum security to the memory content of the device by letting users secure the device after programming.

Figure 6-23 AJSM Unlock

The device is unsecure by default by virtue of a 128-bit visible unlock code programmed in the OTP address 0xF0000000. The OTP contents are XOR-ed with the "Unlock By Scan" register contents (see Figure 6-23). The outputs of these XOR gates are again combined with a set of secret internal tie-offs. The output of this combinational logic is compared against a secret hard-wired 128-bit value. A match results in the UNLOCK signal being asserted, so that the device is now unsecure.

A user can secure the device by changing at least one bit in the visible unlock code from 1 to 0. Changing a 0 to 1 is not possible because the visible unlock code is stored in the One Time Programmable (OTP) flash region. Also, changing all the 128 bits to zeros is not a valid condition and will permanently secure the device.

Once secured, a user can unsecure the device by scanning an appropriate value into the "Unlock By Scan" register of the AJSM module. The value to be scanned is such that the XOR of the OTP contents and the Unlock-By-Scan register contents results in the original visible unlock code.

The Unlock-By-Scan register is reset only upon asserting power-on reset (nPORRST).

A secure device only permits JTAG accesses to the AJSM scan chain via the Secondary Tap # 2 of the ICEPick module. All other secondary taps, test taps and the boundary scan interface are not accessible in this state.

6.21.7 Embedded Trace Macrocell (ETM-R4)

The device contains a ETM-R4 module with a 32-bit internal data port. The ETM-R4 module is connected to a TPIU with a 32-bit data bus; the TPIU provides a 35-bit (32-bit data, 3-bit control) external interface for trace. The ETM-R4 is CoreSight compliant and follows the ETM v3 specification; for more details see ARM CoreSight ETM-R4 TRM specification.

6.21.7.2 Timing Specifications

Figure 6-24 ETMTRACECLKOUT Timing

Table 6-42 ETMTRACECLK Timing

PARAMETER		MIN	MAX	UNIT
tcyc(ETM)	Clock period	t(HCLK) * 4		ns
tl(ETM)	Low pulse width	20		ns
th(ETM)	High pulse width	20		ns
tr(ETM)	Clock and data rise time		3	ns
tf(ETM)	Clock and data fall time		3	ns

Figure 6-25 ETMDATA Timing

Table 6-43 ETMDATA Timing

PARAMETER		MIN	MAX	UNIT
td(ETMTRACECLKH-ETMDATAV)	Delay time, ETM trace clock high to ETM data valid	1.5	7	ns
td(ETMTRACECLKl-ETMDATAV)	Delay time, ETM trace clock low to ETM data valid	1.5	7	ns

NOTE

The ETMTRACECLK and ETMDATA timing is based on a 15-pF load and for ambient temperature lower than 85°C.

6.21.8 RAM Trace Port (RTP)

The RTP provides the ability to datalog the RAM contents of the TMS570 devices or accesses to peripherals without program intrusion. It can trace all data write or read accesses to internal RAM. In addition, it provides the capability to directly transfer data to a FIFO to support a CPU-controlled transmission of the data. The trace data is transmitted over a dedicated external interface.

6.21.8.2 Timing Specifications

Figure 6-26 RTPCLK Timing

Table 6-44 RTPCLK Timing

PARAMETER		MIN	MAX	UNIT
tcyc(RTP)	Clock period, prescaled from HCLK; must not be faster than HCLK / 2	11 (= 90 MHz)		ns
th(RTP)	High pulse width	((tcyc(RTP))/2) - ((tr+tf)/2)		ns
tl(RTP)	Low pulse width	((tcyc(RTP))/2) - ((tr+tf)/2)		ns

Figure 6-27 RTPDATA Timing

Table 6-45 RTPDATA Timing

PARAMETER		MIN	MAX	UNIT
td(RTPCLKH-RTPSYNCV)	Delay time, RTPCLK high to RTPSYNC valid	–5	4	ns
td(RTPCLKH-RTPDATAV)	Delay time, RTPCLK high to RTPDATA valid	–5	4	ns

Figure 6-28 RTPnENA Timing

Table 6-46 RTPnENA Timing

PARAMETER		MIN	MAX	UNIT
tdis(RTP)	time RTPnENA must go high before what would be the next RTPSYNC, to ensure delaying the next packet	3tc(HCLK) + tr(RTPSYNC) + 12		ns
tena(RTP)	time after RTPnENA goes low before a packet that has been halted, resumes	4tc(HCLK) + tr(RTPSYNC)	5tc(HCLK) + tr(RTPSYNC) + 12	ns

6.21.9 Data Modification Module (DMM)

The Data Modification Module (DMM) provides the capability to modify data in the entire 4-GB address space of the TMS570 devices from an external peripheral, with minimal interruption of the application.

6.21.9.2 Timing Specifications

Figure 6-29 DMMCLK Timing

Table 6-47 Timing Requirements for DMMCLK

		MIN	MAX	UNIT
tcyc(DMM)	Cycle time, DMMCLK period	tc(HCLK) * 2		ns
th(DMM)	Pulse duration, DMMCLK high	((tcyc(DMM))/2) - ((tr+tf)/2)		ns
tl(DMM)	Pulse duration, DMMCLK low	((tcyc(DMM))/2) - ((tr+tf)/2)		ns

Figure 6-30 DMMDATA Timing

Table 6-48 Timing Requirements for DMMDATA

		MIN	MAX	UNIT
tssu(DMM)	SYNC active to clk falling edge setup time	2		ns
tsh(DMM)	clk falling edge to SYNC inactive hold time	3		ns
tdsu(DMM)	DATA to clk falling edge setup time	2		ns
tdh(DMM)	clk falling edge to DATA hold time	3		ns

Figure 6-31 DMMnENA Timing

Figure 6-31 shows a case with 1 DMM packet per 2 DMMCLK cycles (Mode = Direct Data Mode, data width = 8, port width = 4) where none of the packets received by the DMM are sent out, leading to filling up of the internal buffers. The DMMnENA signal is shown asserted, after the first two packets have been received and synchronized to the HCLK domain. Here, the DMM has the capacity to accept packets D4x, D5x, D6x, D7x. Packet D8 would result in an overflow. Once DMMnENA is asserted, the DMM expects to stop receiving packets after 4 HCLK cycles; once DMMnENA is deasserted, the DMM can handle packets immediately (after 0 HCLK cycles).

6.21.10 Boundary Scan Chain

The device supports IEEE1149.1-compliant boundary scan for testing pin-to-pin compatibility. The boundary scan chain is connected to the Boundary Scan Interface of the ICEPICK module (see Figure 6-32).

Figure 6-32 Boundary Scan Implementation (Conceptual Diagram)

Data is serially shifted into all boundary-scan buffers through TDI and out through TDO.