SCDS406A December 2018 – February 2024 TMUX1109
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The TMUX1109 has a transmission gate topology, as shown in Figure 6-13. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.
The TMUX1109 has special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to as low as 1pC at VS = 1V as shown in Figure 6-14.