SCDS408C February 2019 – December 2023 TMUX1111 , TMUX1112 , TMUX1113
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The TMUX111x devices have a transmission gate topology, as shown in Figure 8-3. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.
The TMUX111x devices have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to -1.5pC at VS = 1V as shown in Figure 8-4.