SCDS413B August   2019  – February 2024 TMUX1121 , TMUX1122 , TMUX1123

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Channel-to-Channel Crosstalk
    9. 7.9 Bandwidth
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
      5. 8.3.5 Ultra-Low Leakage Current
      6. 8.3.6 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application - Sample-and-Hold Circuit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Typical Application - Switched Gain Amplifier
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curve
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.7 Electrical Characteristics (VDD = 1.8V ±10 %)

at TA = 25°C, VDD = 1.8V (unless otherwise noted)
PARAMETERTEST CONDITIONSTAMINTYPMAXUNIT
ANALOG SWITCH
RONOn-resistanceVS = 0V to VDD
ISD = 10mA
Refer to Section 7.1		25°C40Ω
–40°C to +85°C80Ω
–40°C to +125°C 80Ω
ΔRONOn-resistance matching between channelsVS = 0V to VDD
ISD = 10mA
Refer to Section 7.1		25°C0.4Ω
–40°C to +85°C1.5Ω
–40°C to +125°C 1.5Ω
IS(OFF)Source off leakage current(1)VDD = 1.98V
Switch Off
VD = 1.62 V / 1V
VS = 1V / 1.62 V
Refer to Section 7.2		25°C–0.05±0.0010.05nA
–40°C to +85°C–0.20.2nA
–40°C to +125°C –0.90.9nA
ID(OFF)Drain off leakage current(1)VDD = 1.98V
Switch Off
VD = 1.62 V / 1V
VS = 1V / 1.62 V
Refer to Section 7.2		25°C–0.05±0.0010.05nA
–40°C to +85°C–0.20.2nA
–40°C to +125°C –0.90.9nA
ID(ON)
IS(ON)		Channel on leakage currentVDD = 1.98V
Switch On
VD = VS = 1.62 V / 1V
Refer to Section 7.3		25°C–0.1±0.0030.1nA
–40°C to +85°C–0.350.35nA
–40°C to +125°C –22nA
LOGIC INPUTS (SELx)
VIHInput logic high –40°C to +125°C 1.075.5V
VILInput logic low –40°C to +125°C 00.68V
IIH
IIL		Input leakage current25°C ±0.005 µA
IIH
IIL		Input leakage current –40°C to +125°C   ±0.05µA
CINLogic input capacitance25°C 1pF
CINLogic input capacitance –40°C to +125°C  2pF
POWER SUPPLY
IDDVDD supply currentLogic inputs = 0V or 5.5V25°C0.001 µA
–40°C to +125°C  0.85µA
DYNAMIC CHARACTERISTICS
tTRANTransition time between channelsVS = 1V
RL = 200Ω, CL = 15pF
Refer to Section 7.4		25°C 25ns
–40°C to +85°C 44ns
–40°C to +125°C   44ns
tOPEN (BBM)Break before make time
(TMUX1123 Only)		VS = 1V
RL = 200Ω, CL = 15pF
Refer to Section 7.5		25°C 17ns
–40°C to +85°C1  ns
–40°C to +125°C 1  ns
QCCharge InjectionVS = 1V
RS = 0Ω, CL = 1nF
Refer to Section 7.6		25°C –0.5 pC
OISOOff IsolationRL = 50Ω, CL = 5pF
f = 1MHz
Refer to Section 7.7		25°C –62 dB
RL = 50Ω, CL = 5pF
f = 10MHz
Refer to Section 7.7		25°C –40 dB
XTALKCrosstalkRL = 50Ω, CL = 5pF
f = 1MHz
Refer to Section 7.8		25°C –100 dB
RL = 50Ω, CL = 5pF
f = 10MHz
Refer to Section 7.8		25°C –90 dB
BWBandwidthRL = 50Ω, CL = 5pF
Refer to Section 7.9		25°C 300 MHz
CSOFFSource off capacitancef = 1MHz25°C 6 pF
CDOFFDrain off capacitancef = 1MHz25°C 10 pF
CSON
CDON		On capacitancef = 1MHz25°C 18 pF
(1) When VS is 1.62 V, VD is 1V or when VS is 1V, VD is 1.62 V.