SCDS399 August   2019 TMUX1247

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Application Example
      2.      TMUX1247 Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %), GND = 0 V unless otherwise specified.
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %), GND = 0 V unless otherwise specified.
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %), GND = 0 V unless otherwise specified.
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition Time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Crosstalk
    9. 7.9 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Input Control for Power Amplifier
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Switchable Operational Amplifier Gain Setting
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics (VDD = 3.3 V ±10 %), GND = 0 V unless otherwise specified.

at TA = 25°C, VDD = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 4.5 Ω
–40°C to +85°C 12.5 Ω
–40°C to +125°C 13 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 0.15 Ω
–40°C to +85°C 1 Ω
–40°C to +125°C 1 Ω
RON FLAT On-resistance flatness VS = 0 V to VDD
ISD = 10 mA
Refer to On-Resistance 		25°C 3.5 Ω
–40°C to +85°C 4 Ω
–40°C to +125°C 5 Ω
IS(OFF) Source off leakage current(1) VDD = 3.3 V
Switch Off
VD = 3 V / 1 V
VS = 1 V / 3 V
Refer to Off-Leakage Current 		25°C ±75 nA
–40°C to +85°C –150 150 nA
–40°C to +125°C –175 175 nA
ID(ON)
IS(ON) 		Channel on leakage current VDD = 3.3 V
Switch On
VD = VS = 3 V / 1 V
Refer to On-Leakage Current 		25°C ±200 nA
–40°C to +85°C –500 500 nA
–40°C to +125°C –750 750 nA
LOGIC INPUTS
VIH Input logic high -40°C to 125°C 1.35 5.5 V
VIL Input logic low -40°C to 125°C 0 0.8 V
IIH
IIL 		Input leakage current 25°C ±0.005 µA
IIH
IIL 		Input leakage current –40°C to +125°C ±0.05 µA
CIN Logic input capacitance 25°C 1 pF
CIN Logic input capacitance –40°C to +125°C 2 pF
POWER SUPPLY
IDD VDD supply current Digital Inputs = 0 V or 5.5 V 25°C 0.004 µA
–40°C to +125°C 0.8 µA
DYNAMIC CHARACTERISTICS
tTRAN Switching time between channels VS = 2 V
RL = 200 Ω, CL = 15 pF		 25°C 14 ns
–40°C to +85°C 20 ns
–40°C to +125°C 22 ns
tOPEN (BBM) Break before make time VS = 2 V
RL = 200 Ω, CL = 15 pF		 25°C 8 ns
–40°C to +85°C 1 ns
–40°C to +125°C 1 ns
QC Charge Injection VS = VDD/2
RS = 0 Ω, CL = 1 nF		 25°C –6 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Off Isolation 		25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Off Isolation 		25°C   –45   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Crosstalk 		25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Crosstalk 		25°C   –45   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF
Refer to Bandwidth 		25°C 250 MHz
CSOFF Source off capacitance f = 1 MHz 25°C 7 pF
CSON
CDON 		On capacitance f = 1 MHz 25°C 23 pF
(1) When VS is 3 V, VD is 1 V or when VS is 1 V, VD is 3 V.