SCDS426E March   2020  – October 2022 TMUX1308 , TMUX1309

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information: TMUX1308
    5. 7.5  Thermal Information: TMUX1309
    6. 7.6  Electrical Characteristics
    7. 7.7  Logic and Dynamic Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Injection Current Coupling
    10. 7.10 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Transition Time
    5. 8.5  Break-Before-Make
    6. 8.6  tON(EN) and tOFF(EN)
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
    11. 8.11 Injection Current Control
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Rail-to-Rail Operation
      3. 9.3.3 1.8 V Logic Compatible Inputs
      4. 9.3.4 Fail-Safe Logic
      5. 9.3.5 Injection Current Control
        1. 9.3.5.1 TMUX13xx is Powered, Channel is Unselected, and the Input Signal is Greater Than VDD (VDD = 5 V, VINPUT = 5.5 V)
        2. 9.3.5.2 TMUX13xx is Powered, Channel is Selected, and the Input Signal is Greater Than VDD (VDD = 5 V, VINPUT = 5.5 V)
        3. 9.3.5.3 TMUX13xx is Unpowered and the Input Signal has a Voltage Present (VDD = 0 V, VINPUT = 3 V)
    4. 9.4 Device Functional Modes
    5. 9.5 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
    3. 10.3 Design Requirements
    4. 10.4 Detailed Design Procedure
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.7 Charge Injection

The TMUX1308 and TMUX1309 device have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 8-7 shows the setup used to measure charge injection from source (Sx) to drain (D).

GUID-1DF743EB-6C15-4B54-921A-EC6262AAF2EA-low.gifFigure 8-7 Charge-Injection Measurement Setup