SCDS476 June   2024 TMUX1308A-Q1 , TMUX1309A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Thermal Information: TMUX1308A-Q1
    4. 6.4  Thermal Information: TMUX1309A-Q1
    5. 6.5  Recommended Operating Conditions
    6. 6.6  Electrical Characteristics
    7. 6.7  Logic and Dynamic Characteristics
    8. 6.8  Timing Characteristics
    9. 6.9  Injection Current Coupling
    10. 6.10 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  Break-Before-Make
    6. 7.6  tON(EN) and tOFF(EN)
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Crosstalk
    10. 7.10 Bandwidth
    11. 7.11 Injection Current Control
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
      5. 8.3.5 High-Impedance Optimization
      6. 8.3.6 Injection Current Control
        1. 8.3.6.1 TMUX13xxA-Q1 is Powered, Channel is Unselected, and the Input Signal is Greater Than VDD (VDD = 5V, VINPUT = 5.5V)
        2. 8.3.6.2 TMUX13xxA-Q1 is Powered, Channel is Selected, and the Input Signal is Greater Than VDD (VDD = 5V, VINPUT = 5.5V)
        3. 8.3.6.3 TMUX13xxA-Q1 is Unpowered and the Input Signal has a Voltage Present (VDD = 0V, VINPUT = 3V)
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Short To Battery Protection
      4. 9.2.4 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information
  13. 12Revision History

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.3 Power Supply Recommendations

The TMUX1308A-Q1 and TMUX1309A-Q1 devices operate across a wide supply range of 1.62V to 5.5V. Note: do not exceed the absolute maximum ratings because stresses beyond the listed ratings can cause permanent damage to the devices.

Power-supply bypassing improves noise margin and prevents switching noise propagation from the VDD supply to other components. Good power-supply decoupling is important to achieve optimum performance. For improved supply noise immunity, use a supply decoupling capacitor ranging from 0.1μF to 10μF from VDD to ground. Place the bypass capacitors as close to the power supply pins of the device as possible using low-impedance connections.

TI recommends using multi-layer ceramic chip capacitors (MLCCs) that offer low equivalent series resistance (ESR) and inductance (ESL) characteristics for power-supply decoupling purposes. For very sensitive systems, or for systems in harsh noise environments, avoiding the use of vias for connecting the capacitors to the device pins may offer superior noise immunity. The use of multiple vias in parallel lowers the overall inductance and is beneficial for connections to ground planes.