SCDS445D May   2022  – July 2024 TMUX4051 , TMUX4052 , TMUX4053

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information: TMUX405x
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics
    6. 6.6 AC Performance Characteristics
    7. 6.7 Timing Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  Break-Before-Make
    6. 7.6  tON(EN) and tOFF(EN)
    7. 7.7  Propagation Delay
    8. 7.8  Charge Injection
    9. 7.9  Off Isolation
    10. 7.10 Crosstalk
    11. 7.11 Bandwidth
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8V Logic Compatible Inputs
      4. 8.3.4 Device Functional Modes
      5. 8.3.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Design Requirements
    4. 9.4 Detailed Design Procedure
    5. 9.5 Application Curves
    6. 9.6 Power Supply Recommendations
    7. 9.7 Layout
      1. 9.7.1 Layout Guidelines
      2. 9.7.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)

7.8 Charge Injection

Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-8 shows the setup used to measure charge injection from source (Sx) to drain (D).

TMUX4051 TMUX4052 TMUX4053 Charge-Injection Measurement Setup Figure 7-8 Charge-Injection Measurement Setup