SCDS452B March   2023  – May 2024 TMUX6221 , TMUX6222

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 5.7  ±15 V Dual Supply: Switching Characteristics 
    8. 5.8  36 V Single Supply: Electrical Characteristics 
    9. 5.9  36 V Single Supply: Switching Characteristics 
    10. 5.10 12 V Single Supply: Electrical Characteristics 
    11. 5.11 12 V Single Supply: Switching Characteristics 
    12. 5.12 ±5 V Dual Supply: Electrical Characteristics 
    13. 5.13 ±5 V Dual Supply: Switching Characteristics 
    14. 5.14 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  tON(EN) and tOFF(EN)
    5. 6.5  tON (VDD) Time
    6. 6.6  Propagation Delay
    7. 6.7  Charge Injection
    8. 6.8  Off Isolation
    9. 6.9  Crosstalk
    10. 6.10 Bandwidth
    11. 6.11 THD + Noise
    12. 6.12 Power Supply Rejection Ratio (PSRR)
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8 V Logic Compatible Inputs
      4. 7.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 7.3.5 Fail-Safe Logic
      6. 7.3.6 Latch-Up Immune
      7. 7.3.7 Ultra-Low Charge Injection
    4. 7.4 Device Functional Modes
    5. 7.5 Truth Tables
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Switched Gain Amplifier – Discrete PGA
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGS|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

36 V Single Supply: Switching Characteristics 

VDD = +36 V ± 10%, VSS = 0 V, GND = 0 V (unless otherwise noted) 
Typical at VDD = +36 V, VSS = 0 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
tON Turn-on time from control input VS = 18 V
RL = 300 Ω, CL = 35 pF
25°C 110 180 ns
–40°C to +85°C 190 ns
–40°C to +125°C 200 ns
tOFF Turn-off time from control input VS = 18 V
RL = 300 Ω, CL = 35 pF
25°C 90 180 ns
–40°C to +85°C 195 ns
–40°C to +125°C 200 ns
tON (VDD) Device turn on time
(VDD to output)
VDD rise time = 1 µs
RL = 300 Ω, CL = 35 pF
25°C 0.17 ms
–40°C to +85°C 0.19 ms
–40°C to +125°C 0.19 ms
tPD Propagation delay RL = 50 Ω , CL = 5 pF 25°C 500 ps
QINJ Charge injection VS = 18 V, CL = 100 pF 25°C –13 pC
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 100 kHz
25°C –70 dB
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 1 MHz
25°C –50 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 100 kHz
25°C –112 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 1 MHz
25°C –93 dB
BW –3dB Bandwidth RL = 50 Ω , CL = 5 pF
VS = 6 V
25°C 45 MHz
IL Insertion loss RL = 50 Ω , CL = 5 pF
VS = 6 V, f = 1 MHz
25°C –0.19 dB
ACPSRR AC Power Supply Rejection Ratio VPP = 0.62 V on VDD and VSS
RL = 50 Ω , CL = 5 pF,
f = 1 MHz
25°C –71 dB
THD+N Total Harmonic Distortion + Noise VPP =18 V, VBIAS = 18 V
RL  =  10 kΩ , CL = 5 pF,
f = 20 Hz to 20 kHz
25°C 0.0004 %
CS(OFF) Source off capacitance VS = 18 V, f = 1 MHz 25°C 26 pF
CD(OFF) Drain off capacitance VS = 18 V, f = 1 MHz 25°C 35 pF
CS(ON),
CD(ON)
On capacitance VS = 18 V, f = 1 MHz 25°C 120 pF