SCDS455 May   2022 TMUX7219M

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Thermal Information
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Source or Drain Continuous Current
    6. 6.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 6.7  ±15 V Dual Supply: Switching Characteristics 
    8. 6.8  ±20 V Dual Supply: Electrical Characteristics
    9. 6.9  ±20 V Dual Supply: Switching Characteristics
    10. 6.10 44 V Single Supply: Electrical Characteristics 
    11. 6.11 44 V Single Supply: Switching Characteristics 
    12. 6.12 12 V Single Supply: Electrical Characteristics 
    13. 6.13 12 V Single Supply: Switching Characteristics 
    14. 6.14 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  tON(EN) and tOFF(EN)
    6. 7.6  Break-Before-Make
    7. 7.7  tON (VDD) Time
    8. 7.8  Propagation Delay
    9. 7.9  Charge Injection
    10. 7.10 Off Isolation
    11. 7.11 Crosstalk
    12. 7.12 Bandwidth
    13. 7.13 THD + Noise
    14. 7.14 Power Supply Rejection Ratio (PSRR)
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Integrated Pull-Up and Pull-Down Resistor on Logic Pins
      5. 8.3.5 Fail-Safe Logic
      6. 8.3.6 Latch-Up Immune
      7. 8.3.7 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Data Acquisition Calibration
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.7 Ultra-Low Charge Injection

Figure 8-1 shows how the TMUX7219M has a transmission gate topology. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.

GUID-E509C7FD-0F79-4AD4-9FE9-87F07F01D1E9-low.gif Figure 8-1 Transmission Gate Topology

The TMUX7219M contains specialized architecture to reduce charge injection on the source (Sx). To further reduce charge injection in a sensitive application, a compensation capacitor (Cp) can be added on the drain (D). This will ensure that excess charge from the switch transition will be pushed into the compensation capacitor on the drain (D) instead of the source (Sx). As a general rule, Cp should be 20× larger than the equivalent load capacitance on the source (Sx). Figure 8-2 shows charge injection variation with source voltage with different compensation capacitors on the drain side.

Figure 8-2 Charge Injection Compensation