SCDS466A August   2023  – December 2024 TMUX7612

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Source or Drain Current through Switch
    5. 5.5  Recommended Operating Conditions
    6. 5.6  Electrical Characteristics (Global)
    7. 5.7  Electrical Characteristics (±15 V Dual Supply)
    8. 5.8  Switching Characteristics (±15 V Dual Supply)
    9. 5.9  Electrical Characteristics (±20 V Dual Supply)
    10. 5.10 Switching Characteristics (±20 V Dual Supply)
    11. 5.11 Electrical Characteristics (+37.5 V/–12.5 V Dual Supply)
    12. 5.12 Switching Characteristics (+37.5 V/–12.5 V Dual Supply)
    13. 5.13 Electrical Characteristics (12 V Single Supply)
    14. 5.14 Switching Characteristics (12 V Single Supply)
    15. 5.15 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  tON and tOFF Time
    5. 6.5  Propagation Delay
    6. 6.6  Charge Injection
    7. 6.7  Off Isolation
    8. 6.8  Channel-to-Channel Crosstalk
    9. 6.9  Bandwidth
    10. 6.10 THD + Noise
    11. 6.11 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8 V Logic Compatible Inputs
      4. 7.3.4 Flat On-Resistance
      5. 7.3.5 Power-Up Sequence Free
      6. 7.3.6 Ultra-Low Charge Injection
      7. 7.3.7 Ultra-Low Leakage Current
    4. 7.4 Device Functional Modes
      1. 7.4.1 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Detailed Design Procedure
      2. 8.2.2 Design Requirements
      3. 8.2.3 Application Curve
    3. 8.3 Thermal Considerations
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information
    2. 11.2 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Charge Injection

This device has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 6-6 shows the setup used to measure charge injection from source (Sx) to drain (Dx).

TMUX7612 Charge-Injection Measurement Setup Figure 6-6 Charge-Injection Measurement Setup