SCDS435B september   2021  – august 2023 TMUX8108 , TMUX8109

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings: TMUX810x Devices
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions: TMUX810x Devices
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics (Global): TMUX810x Devices
    6. 7.6  Electrical Characteristics (±15-V Dual Supply)
    7. 7.7  Electrical Characteristics (±36-V Dual Supply)
    8. 7.8  Electrical Characteristics (±50-V Dual Supply)
    9. 7.9  Electrical Characteristics (72-V Single Supply)
    10. 7.10 Electrical Characteristics (100-V Single Supply)
    11. 7.11 Switching Characteristics: TMUX810x Devices
    12. 7.12 Typical Characteristics
  9. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Break-Before-Make Delay
    5. 8.5  Enable Turn-on and Turn-off Time
    6. 8.6  Transition Time
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
    11. 8.11 THD + Noise
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Flat On – Resistance
      3. 9.3.3 Protection Features
        1. 9.3.3.1 Fail-Safe Logic
        2. 9.3.3.2 ESD Protection
        3. 9.3.3.3 Latch-Up Immunity
      4. 9.3.4 1.8 V Logic Compatible Inputs
      5. 9.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Truth Tables
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • RUM|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.11 Switching Characteristics: TMUX810x Devices

over operating free-air temperature range (unless otherwise noted) 
typical at VDD = +36 V, VSS = –36 V, GND = 0 V and TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
tTRAN Transition time from control input VS = 10 V
RL = 10 kΩ, CL = 15 pF		 25°C 3 µs
–40°C to +85°C 10
–40°C to +125°C 12
tON (EN) Turn-on time from enable VS = 10 V
RL = 10 kΩ, CL = 15 pF		 25°C 3 µs
–40°C to +85°C 14
–40°C to +125°C 15
tOFF (EN) Turn-off time from enable VS = 10 V
RL = 10 kΩ, CL = 15 pF		 25°C 0.65 µs
–40°C to +85°C 3
–40°C to +125°C 3
tBBM Break-before-make time delay VS = 10 V,
RL = 10 kΩ, CL = 15 pF		 25°C 3 µs
–40°C to +85°C 0.1
–40°C to +125°C 0.1
TON (VDD) Device turn on time
(VDD to output)		 VDD ramp rate = 1 V/µs,
VS = 10 V,
RL = 10 kΩ, CL = 15 pF		 25°C 75 µs
tPD Propagation delay RL = 50 Ω , CL = 5 pF 25°C 550 ps
QINJ Charge injection VS = (VDD + VSS) / 2, CL = 1 nF 25°C –150 pC
OISO Off isolation RL = 50 Ω , CL = 5 pF
VS = (VDD + VSS) / 2, f = 1 MHz		 25°C –110 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = (VDD + VSS) / 2, f = 1MHz		 25°C –110 dB
BW –3dB bandwidth (TMUX8108) RL = 50 Ω , CL = 5 pF
VS = (VDD + VSS) / 2		 25°C 200 MHz
BW –3dB bandwidth (TMUX8109) 380
IL Insertion loss RL = 50 Ω , CL = 5 pF
VS = (VDD + VSS) / 2, f = 1 MHz		 25°C –2.8 dB
THD+N Total harmonic distortion + Noise Dual supply voltage
VPP = 5 V, VBIAS = (VDD + VSS) / 2
RL  =  1 kΩ , CL = 5 pF,
f = 20 Hz to 20 kHz		 25°C 0.003 %
CS(OFF) Source off capacitance VS = (VDD + VSS) / 2, f = 1 MHz 25°C 3 pF
CD(OFF) Drain off capacitance (TMUX8108) VS = (VDD + VSS) / 2, f = 1 MHz 25°C 20 pF
CD(OFF) Drain off capacitance (TMUX8109) VS = (VDD + VSS) / 2, f = 1 MHz 25°C 10 pF
CS(ON), CD(ON) On capacitance (TMUX8108) VS = (VDD + VSS) / 2, f = 1 MHz 25°C 21 pF
CS(ON), CD(ON) On capacitance (TMUX8109) VS = (VDD + VSS) / 2, f = 1 MHz 25°C 12 pF