SCDS435B september   2021  – august 2023 TMUX8108 , TMUX8109

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings: TMUX810x Devices
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions: TMUX810x Devices
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics (Global): TMUX810x Devices
    6. 7.6  Electrical Characteristics (±15-V Dual Supply)
    7. 7.7  Electrical Characteristics (±36-V Dual Supply)
    8. 7.8  Electrical Characteristics (±50-V Dual Supply)
    9. 7.9  Electrical Characteristics (72-V Single Supply)
    10. 7.10 Electrical Characteristics (100-V Single Supply)
    11. 7.11 Switching Characteristics: TMUX810x Devices
    12. 7.12 Typical Characteristics
  9. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Break-Before-Make Delay
    5. 8.5  Enable Turn-on and Turn-off Time
    6. 8.6  Transition Time
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
    11. 8.11 THD + Noise
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Flat On – Resistance
      3. 9.3.3 Protection Features
        1. 9.3.3.1 Fail-Safe Logic
        2. 9.3.3.2 ESD Protection
        3. 9.3.3.3 Latch-Up Immunity
      4. 9.3.4 1.8 V Logic Compatible Inputs
      5. 9.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Truth Tables
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • RUM|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.7 Electrical Characteristics (±36-V Dual Supply)

VDD = +36 V ± 10%, VSS = –36 V ± 10%, GND = 0 V (unless otherwise noted) 
Typical at TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = -25 V to +25 V
ID = –5 mA		 25°C 38 48 Ω
–40°C to +85°C 65
–40°C to +125°C 80
ΔRON On-resistance mismatch between channels VS = -25 V to +25 V
ID = –5 mA		 25°C 0.65 Ω
–40°C to +85°C 1.5
–40°C to +125°C 2.1
RON FLAT On-resistance flatness VS = -25 V to +25 V
ID = –5 mA		 25°C 0.9 Ω
RON DRIFT On-resistance drift VS = 0 V, IS = –5 mA –40°C to +125°C 0.25 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 39.6 V, VSS = –39.6 V
Switch state is off
VS = +25 V / –25 V
VD = –25 V / +25 V		 25°C 0.01 nA
–40°C to +85°C –3 3
–40°C to +125°C –15 15
ID(OFF) Drain off leakage current(1) VDD = 39.6 V, VSS = –39.6 V
Switch state is off
VS = +25 V / –25 V
VD = –25 V / +25 V		 25°C 0.06 nA
–40°C to +85°C –8 8
–40°C to +125°C –40 40
IS(ON)
ID(ON)		 Channel on leakage current(2) VDD = 39.6 V, VSS = –39.6 V
Switch state is on
VS = VD = ±25 V		 25°C 0.06 nA
–40°C to +85°C –8 8
–40°C to +125°C –40 40
ΔIS(ON)
ΔID(ON)		 Leakage current mismatch between channels(2) VDD = 39.6 V, VSS = –39.6 V
Switch state is on
VS = VD = ±25 V		 25°C 5 pA
85°C 30
125°C 100
(1) When VS is positive,VD is negative. And when VS is negative, VD is positive.
(2) When VS is at a voltage potential, VD is floating. And when VD is at a voltage potential, VS is floating.