The TPA3112D1 is a 25-W efficient, Class-D audio power amplifier for driving a bridge tied speaker. Advanced EMI Suppression Technology enables the use of inexpensive ferrite bead filters at the outputs while meeting EMC requirements. SpeakerGuard speaker protection system includes an adjustable power limiter and a DC detection circuit. The adjustable power limiter allows the user to set a virtual voltage rail lower than the chip supply to limit the amount of current through the speaker. The DC detect circuit measures the frequency and amplitude of the PWM signal and shuts off the output stage if the input capacitors are damaged or shorts exist on the inputs.
The TPA3112D1 can drive a mono speaker as low as 4Ω. The high efficiency of the TPA3112D1, > 90%, eliminates the need for an external heat sink when playing music.
The outputs are fully protected against shorts to GND, VCC, and output-to-output. The short-circuit protection and thermal protection includes an auto-recovery feature.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPA3112D1 | HTSSOP (28) | 4.40 mm × 9.70 mm |
Changes from C Revision (July 2012) to D Revision
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
AGND | 8 | G | Analog supply ground. Connect to the thermal pad. |
AVCC | 7 | P | Analog supply. |
AVCC | 14 | P | Connect AVCC supply to this pin |
BSN | 22 | I | Bootstrap I/O for negative high-side FET. |
BSN | 26 | I | Bootstrap I/O for negative high-side FET. |
BSP | 21 | I | Bootstrap I/O for positive high-side FET. |
BSP | 17 | I | Bootstrap I/O for positive high-side FET. |
FAULT | 2 | O | Open drain output used to display short circuit or dc detect fault status. Voltage compliant to AVCC. Short circuit faults can be set to auto-recovery by connecting FAULT pin to SD pin. Otherwise, both the short circuit faults and dc detect faults must be reset by cycling PVCC. |
GAIN0 | 5 | I | Gain select least significant bit. TTL logic levels with compliance to AVCC. |
GAIN1 | 6 | I | Gain select most significant bit. TTL logic levels with compliance to AVCC. |
GND | 3 | G | Connect to local ground |
GND | 4 | G | Connect to local ground |
GVDD | 9 | O | High-side FET gate drive supply. Nominal voltage is 7 V. May also be used as supply for PLILMIT divider. Add a 1-μF capacitor to ground at this pin. |
INP | 12 | I | Positive audio input. Biased at 3 V. |
INN | 11 | I | Negative audio input. Biased at 3 V. |
NC | 13 | — | Not connected |
OUTN | 23 | O | Class-D H-bridge negative output. |
OUTN | 25 | O | Class-D H-bridge negative output. |
OUTP | 20 | O | Class-D H-bridge positive output. |
OUTP | 18 | O | Class-D H-bridge positive output. |
PLIMIT | 10 | I | Power limit level adjust. Connect directly to GVDD pin for no power limiting. Add a 1-μF capacitor to ground at this pin. |
PGND | 19 | G | Power ground for the H-bridges. |
PGND | 24 | G | Power ground for the H-bridges. |
PVCC | 15 | P | Power supply for H-bridge. PVCC pins are also connected internally. |
PVCC | 16 | P | Power supply for H-bridge. PVCC pins are also connected internally. |
PVCC | 27 | P | Power supply for H-bridge. PVCC pins are also connected internally. |
PVCC | 28 | P | Power supply for H-bridge. PVCC pins are also connected internally. |
SD | 1 | I | Shutdown logic input for audio amp (LOW = outputs Hi-Z, HIGH = outputs enabled). TTL logic levels with compliance to AVCC. |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VCC | Supply voltage | PVCC, AVCC | 8 | 26 | V | |
VIH | High-level input voltage | SD, GAIN0, GAIN1 | 2 | V | ||
VIL | Low-level input voltage | SD, GAIN0, GAIN1 | 0.8 | V | ||
VOL | Low-level output voltage | FAULT, RPULLUP = 100 kΩ, VCC = 26 V | 0.8 | V | ||
IIH | High-level input current | SD, GAIN0, GAIN1, VI = 2 V, VCC = 18 V | 50 | µA | ||
IIL | Low-level input current | SD, GAIN0, GAIN1, VI = 0.8 V, VCC = 18 V | 5 | µA |
THERMAL METRIC(1) | TPA3112D1 | UNIT | |
---|---|---|---|
PWP (HTSSOP) | |||
28 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 30.0 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 33.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 17.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 7.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
| VOS | | Class-D output offset voltage (measured differentially) | VI = 0 V, Gain = 36 dB | 1.5 | 15 | mV | ||
ICC | Quiescent supply current | SD = 2 V, no load, PVcc=21 V | 40 | mA | |||
ICC(SD) | Quiescent supply current in shutdown mode | SD = 0.8 V, no load, PVcc=21 V | 400 | µA | |||
rDS(on) | Drain-source on-state resistance | IO = 500 mA, TJ = 25°C |
High side | 240 | mΩ | ||
Low side | 240 | ||||||
G | Gain | GAIN1 = 0.8 V | GAIN0 = 0.8 V | 19 | 20 | 21 | dB |
GAIN0 = 2 V | 25 | 26 | 27 | ||||
GAIN1 = 2 V | GAIN0 = 0.8 V | 31 | 32 | 33 | dB | ||
GAIN0 = 2 V | 35 | 36 | 37 | ||||
tON | Turn-on time | SD = 2 V | 10 | ms | |||
tOFF | Turn-off time | SD = 0.8 V | 2 | μs | |||
GVDD | Gate Drive Supply | IGVDD = 2 mA | 6.5 | 6.9 | 7.3 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
| VOS | | Class-D output offset voltage (measured differentially) | VI = 0 V, Gain = 36 dB | 1.5 | 15 | mV | ||
ICC | Quiescent supply current | SD = 2 V, no load, PVcc=12 V | 20 | mA | |||
ICC(SD) | Quiescent supply current in shutdown mode | SD = 0.8 V, no load, PVcc=12 V | 200 | µA | |||
rDS(on) | Drain-source on-state resistance | IO = 500 mA, TJ = 25°C |
High side | 240 | mΩ | ||
Low side | 240 | ||||||
G | Gain | GAIN1 = 0.8 V | GAIN0 = 0.8 V | 19 | 20 | 21 | dB |
GAIN0 = 2 V | 25 | 26 | 27 | ||||
GAIN1 = 2 V | GAIN0 = 0.8 V | 31 | 32 | 33 | dB | ||
GAIN0 = 2 V | 35 | 36 | 37 | ||||
tON | Turn-on time | SD = 2 V | 10 | ms | |||
tOFF | Turn-off time | SD = 0.8 V | 2 | μs | |||
GVDD | Gate Drive Supply | IGVDD = 2 mA | 6.5 | 6.9 | 7.3 | V | |
PLIMIT | Output Voltage maximum under PLIMIT control | VPLIMIT= 2.0 V; VI= 6.0-V differential | 6.75 | 7.90 | 8.75 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
KSVR | Power Supply ripple rejection | 200-mVPP ripple from 20 Hz–1 kHz, Gain = 20 dB, Inputs AC-coupled to AGND |
–70 | dB | ||
PO | Continuous output power | THD+N ≤ 0.1%, f = 1 kHz, VCC = 24 V | 25 | W | ||
THD+N | Total harmonic distortion + noise | VCC = 24 V, f = 1 kHz, PO = 12 W (half-power) | <0.05% | |||
Vn | Output integrated noise | 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB | 65 | µV | ||
–80 | dBV | |||||
Crosstalk | VO = 1 Vrms, Gain = 20 dB, f = 1 kHz | –70 | dB | |||
SNR | Signal-to-noise ratio | Maximum output at THD+N < 1%, f = 1 kHz, Gain = 20 dB, A-weighted |
102 | dB | ||
fOSC | Oscillator frequency | 250 | 310 | 350 | kHz | |
Thermal trip point | 150 | °C | ||||
Thermal hysteresis | 15 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
KSVR | Supply ripple rejection | 200-mVPP ripple from 20 Hz–1 kHz, Gain = 20 dB, Inputs ac-coupled to AGND |
–70 | dB | ||
PO | Continuous output power | THD+N ≤ 10%, f = 1 kHz , RL = 8 Ω | 10 | W | ||
PO | Continuous output power | THD+N ≤ 10%, f = 1 kHz , RL = 4 Ω | 20 | W | ||
THD+N | Total harmonic distortion + noise | RL = 8 Ω, f = 1 kHz, PO = 5 W (half-power) | <0.06% | |||
Vn | Output integrated noise | 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB | 65 | µV | ||
–80 | dBV | |||||
Crosstalk | Po = 1 W, Gain = 20 dB, f = 1 kHz | –70 | dB | |||
SNR | Signal-to-noise ratio | Maximum output at THD+N < 1%, f = 1 kHz, Gain = 20 dB, A-weighted |
102 | dB | ||
fOSC | Oscillator frequency | 250 | 310 | 350 | kHz | |
Thermal trip point | 150 | °C | ||||
Thermal hysteresis | 15 | °C |
Gain = 20 dB | VCC = 12 V | ZL = 8 Ω + 66 µH |
Gain = 20 dB | VCC = 12 V | ZL = 4 Ω + 33 µH |
Gain = 20 dB | VCC = 24 V | ZL = 8 Ω + 66 µH |
Gain = 20 dB | VCC = 24 V | ZL = 8 Ω + 66 µH |
Gain = 20 dB | VCC = 12 V | ZL = 8 Ω + 66 µH |
CI = µF | VI = 0.1 VRMS |
Gain = 20 dB | ZL = 4 Ω + 33 µH |
Gain = 20 dB | VCC = 12 V | ZL = 4 Ω + 33 µH |
Gain = 20 dB | VCC = 24 V | ZL = 8 Ω + 66 µH |
Gain = 20 dB | VCC = 12 V | ZL = 8 Ω + 66 µH |
Gain = 20 dB | VCC = 12 V | ZL = 4 Ω + 33 µH |
Gain = 20 dB | VCC = 12 V | ZL = 4 Ω + 33 µH |
Gain = 20 dB | ZL = 8 Ω + 66 µH |
Gain = 20 dB | ZL = 8 Ω + 66 µH |
Gain = 20 dB | VCC = 12 V | ZL = 8 Ω + 66 µH |