SLOS942 April   2018 TPA3126D2

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      TPA3126 and TPA3116 Idle Current
      2.      Simplified Application Circuit
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 DC Electrical Characteristics
    6. 7.6 AC Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Gain Setting and Master and Slave
      2. 8.3.2  Input Impedance
      3. 8.3.3  Startup and Shutdown Operation
      4. 8.3.4  PLIMIT Operation
      5. 8.3.5  GVDD Supply
      6. 8.3.6  BSPx and BSNx Capacitors
      7. 8.3.7  Differential Inputs
      8. 8.3.8  Device Protection System
      9. 8.3.9  DC Detect Protection
      10. 8.3.10 Short-Circuit Protection and Automatic Recovery Feature
      11. 8.3.11 Thermal Protection
      12. 8.3.12 Device Modulation Scheme
        1. 8.3.12.1 BD Modulation
      13. 8.3.13 Efficiency: LC Filter Required with the Traditional Class-D Modulation Scheme
      14. 8.3.14 Ferrite Bead Filter Considerations
      15. 8.3.15 When to Use an Output Filter for EMI Suppression
      16. 8.3.16 AM Avoidance EMI Reduction
    4. 8.4 Device Functional Modes
      1. 8.4.1 Mono PBTL Mode
      2. 8.4.2 Mono BTL Mode (Single Channel Mode)
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Typical Application
        1. 9.1.1.1 Design Requirements
        2. 9.1.1.2 Detailed Design Procedure
          1. 9.1.1.2.1 Select the PWM Frequency
          2. 9.1.1.2.2 Select the Amplifier Gain and Master/Slave Mode
          3. 9.1.1.2.3 Select Input Capacitance
          4. 9.1.1.2.4 Select Decoupling Capacitors
          5. 9.1.1.2.5 Select Bootstrap Capacitors
        3. 9.1.1.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Mode
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Heat Sink Used on the EVM
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Related Documentation
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.6 BSPx and BSNx Capacitors

The full H-bridge output stages use only NMOS transistors. Therefore, they require bootstrap capacitors for the high side of each output to turn on correctly. A 220-nF ceramic capacitor of quality X5R or better, rated for at least 16 V, must be connected from each output to the corresponding bootstrap input. (See the application circuit diagram inFigure 34.) The bootstrap capacitors connected between the BSxx pins and corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high enough to keep the high-side MOSFETs turned on.