SLOS993A March   2018  – June 2018 TPA3138D2

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      TPA3138 Layout with Ferrite Beads
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Analog Gain
      2. 9.3.2  SD/FAULT Operation
      3. 9.3.3  PLIMIT
      4. 9.3.4  Spread Spectrum and De-Phase Control
      5. 9.3.5  GVDD Supply
      6. 9.3.6  DC Detect
      7. 9.3.7  PBTL Select
      8. 9.3.8  Short-Circuit Protection and Automatic Recovery Feature
      9. 9.3.9  Over-Temperature Protection (OTP)
      10. 9.3.10 Over-Voltage Protection (OVP)
      11. 9.3.11 Under-Voltage Protection (UVP)
    4. 9.4 Device Functional Modes
      1. 9.4.1 MODE_SEL = LOW: BD Modulation
      2. 9.4.2 MODE_SEL = HIGH: Low-Idle-Current 1SPW Modulation
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 PCB Material Recommendation
        2. 10.2.1.2 PVCC Capacitor Recommendation
        3. 10.2.1.3 Decoupling Capacitor Recommendations
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Ferrite Bead Filter Considerations
        2. 10.2.2.2 Efficiency: LC Filter Required with the Traditional Class-D Modulation Scheme
        3. 10.2.2.3 When to Use an Output Filter for EMI Suppression
        4. 10.2.2.4 Input Resistance
        5. 10.2.2.5 Input Capacitor, Ci
        6. 10.2.2.6 BSN and BSP Capacitors
        7. 10.2.2.7 Differential Inputs
        8. 10.2.2.8 Using Low-ESR Capacitors
      3. 10.2.3 Application Performance Curves
        1. 10.2.3.1 EN55013 Radiated Emissions Results
        2. 10.2.3.2 EN55022 Conducted Emissions Results
  11. 11Power Supply Recommendations
    1. 11.1 Power Supply Decoupling, CS
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PWP|28
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.2.2.6 BSN and BSP Capacitors

The full H-bridge output stages use only NMOS transistors. Therefore, they require bootstrap capacitors for the high side of each output to turn on correctly. A 0.22-μF ceramic capacitor, rated for at least 25 V, must be connected from each output to its corresponding bootstrap input. Specifically, one 0.22-μF capacitor must be connected from OUTPx to BSPx, and one 0.22-μF capacitor must be connected from OUTNx to BSNx. (See the application circuit diagram in Figure 20.)

The bootstrap capacitors connected between the BSxx pins and corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high enough to keep the high-side MOSFETs turned on.