SLASEF0 November 2022 TPA3223
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE AND CURRENT CONSUMPTION | ||||||
IVDD | VDD supply current | Operating, no audio signal, VDD = 5 V | 150 | µA | ||
IVDD | Reset mode, VDD = 5 V | 5 | µA | |||
IGVDD | Gate-supply current. AD-mode modulation | 50% duty cycle, VDD = 5 V | 23 | mA | ||
IGVDD | Reset mode, VDD = 5 V | 5 | µA | |||
IPVDD | Total PVDD idle current, AD-mode modulation, BTL | 50% duty cycle with recommended output filter | 45 | mA | ||
IPVDD | Total PVDD idle current, AD-mode modulation, BTL | 50% duty cycle with recommended output filter, TC = 25 ºC | 35 | mA | ||
IPVDD | Total PVDD idle current, AD-mode modulation, BTL | Reset mode, No switching | 1 | mA | ||
ANALOG INPUTS | ||||||
G | Inverting voltage Gain, VOUT/VIN(Primary Clock synchronized device configuration) | R1 = 5.6 kΩ, R2 = OPEN | 20 | dB | ||
R1 = 20 kΩ, R2 = 100 kΩ | 23.5 | |||||
R1 = 39 kΩ, R2 = 100 kΩ | 32 | |||||
R1 = 47 kΩ, R2 = 75 kΩ | 36 | |||||
Inverting voltage Gain, VOUT/VIN(Peripheral clock synchronized device configuration | R1 = 51 kΩ, R2 = 51 kΩ | 20 | ||||
R1 = 75 kΩ, R2 = 47 kΩ | 23.5 | |||||
R1 = 100 kΩ, R2 = 39 kΩ | 32 | |||||
R1 = 100 kΩ, R2 = 16 kΩ | 36 | |||||
RIN | Input resistance | G = 20 dB | 48 | kΩ | ||
G = 23.5 dB | 24 | |||||
G = 32 dB | 12 | |||||
G = 36 dB | 7.3 | |||||
OSCILLATOR | ||||||
fOSC(IO)(1) | Nominal, Primary Mode | FPWM × 6 | 2.76 | 2.88 | 3 | MHz |
AM1, Primary Mode | 3.06 | 3.198 | 3.33 | |||
AM2, Primary Mode | 3.45 | 3.6 | 3.75 | |||
VIH | High level input voltage | 2.7 | V | |||
VIL | Low level input voltage | 0.7 | V | |||
EXTERNAL OSCILLATOR (Peripheral Mode) | ||||||
OUTPUT-STAGE MOSFETs |
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RDS(on) | Drain-to-source resistance, low side (LS) | TJ = 25 °C, Excludes metallization resistance, GVDD = 5 V |
60 | mΩ | ||
Drain-to-source resistance, high side (HS) | 60 | mΩ | ||||
I/O PROTECTION | ||||||
Vuvp,AVDD | Undervoltage protection limit, AVDD | 4 | V | |||
Vuvp,AVDD,hyst | Undervoltage protection hysteresis, AVDD | 0.2 | V | |||
Vuvp,PVDD | Undervoltage protection limit, PVDD_x | 9.1 | V | |||
Vuvp,PVDD,hyst | Undervoltage protection hysteresis, PVDD_x | 0.6 | V | |||
Vovp,PVDD | Overvoltage protection limit, PVDD_x | 46 | V | |||
Vovp,PVDD,hyst | Overvoltage protection hysteresis, PVDD_x | 0.85 | V | |||
OTW | Overtemperature warning, OTW_CLIP | 125 | °C | |||
OTWhyst | Temperature drop needed below OTW temperature for OTW_CLIP to be inactive after OTW event. | 20 | °C | |||
OTE | Overtemperature error | 155 | °C | |||
OTEhyst | A reset needs to occur for FAULT to be released following an OTE event | 20 | °C | |||
OTE-OTW(differential) | OTE-OTW differential | 25 | °C | |||
OLPC | Overload protection counter | fPWM = 480 kHz (1024 PWM cycles) | 2.2 | ms | ||
IOC, BTL | Overcurrent limit protection, speaker load current | Nominal peak current in 1 Ω load | 10 | A | ||
IOC, PBTL | Overcurrent limit protection, speaker output current | Nominal peak current in 1 Ω load | 20 | A | ||
IOCT | Overcurrent response time | Time from switching transition to flip-state induced by overcurrent. | 150 | ns | ||
STATIC DIGITAL SPECIFICATIONS | ||||||
VIH | High level input voltage | RESET | 2.3 | V | ||
VIL | Low level input voltage | 0.7 | V | |||
Ilkg | Input leakage current | OSCM, OSCP, RESET | 100 | μA | ||
OTW/SHUTDOWN (FAULT) | ||||||
RINT_PU | Internal pullup resistance, OTW_CLIP to AVDD, FAULT to AVDD | 26 | kΩ | |||
VOH | High level output voltage | Internal pullup resistor | 4.5 | 5 | 5.5 | V |
VOL | Low level output voltage | IO = 4 mA | 200 | 500 | mV |