SLASE40D May   2015  – April 2016 TPA3251

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Audio Characteristics (BTL)
    7. 7.7  Audio Characteristics (SE)
    8. 7.8  Audio Characteristics (PBTL)
    9. 7.9  Typical Characteristics, BTL Configuration
    10. 7.10 Typical Characteristics, SE Configuration
    11. 7.11 Typical Characteristics, PBTL Configuration
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
      1. 9.3.1 Error Reporting
    4. 9.4 Device Protection System
      1. 9.4.1 Overload and Short Circuit Current Protection
      2. 9.4.2 DC Speaker Protection
      3. 9.4.3 Pin-to-Pin Short Circuit Protection (PPSC)
      4. 9.4.4 Overtemperature Protection OTW and OTE
      5. 9.4.5 Undervoltage Protection (UVP) and Power-on Reset (POR)
      6. 9.4.6 Fault Handling
      7. 9.4.7 Device Reset
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Stereo BTL Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedures
          1. 10.2.1.2.1 Decoupling Capacitor Recommendations
          2. 10.2.1.2.2 PVDD Capacitor Recommendation
          3. 10.2.1.2.3 PCB Material Recommendation
          4. 10.2.1.2.4 Oscillator
      2. 10.2.2 Application Curves
      3. 10.2.3 Typical Application, Single Ended (1N) SE
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedures
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Typical Application, Differential (2N) PBTL
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedures
        3. 10.2.4.3 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Power Supplies
      1. 11.1.1 VDD Supply
    2. 11.2 Powering Up
    3. 11.3 Powering Down
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
      1. 12.2.1 BTL Application Printed Circuit Board Layout Example
      2. 12.2.2 SE Application Printed Circuit Board Layout Example
      3. 12.2.3 PBTL Application Printed Circuit Board Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage BST_X to GVDD_X(2) –0.3 50 V
VDD to GND –0.3 13.2 V
GVDD_X to GND(2) –0.3 13.2 V
PVDD_X to GND(2) –0.3 50 V
DVDD to GND –0.3 4.2 V
AVDD to GND –0.3 8.5 V
VBG to GND -0.3 4.2 V
Interface pins OUT_X to GND(2) –0.3 50 V
BST_X to GND(2) –0.3 62.5 V
OC_ADJ, M1, M2, OSC_IOP, OSC_IOM, FREQ_ADJ, C_START, to GND –0.3 4.2 V
RESET, FAULT, CLIP_OTW, CLIP to GND –0.3 4.2 V
INPUT_X to GND –0.3 7 V
Continuous sink current, RESET, FAULT, CLIP_OTW, CLIP, RESET to GND 9 mA
TJ Operating junction temperature range 0 150 °C
Tstg Storage temperature range –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These voltages represents the DC voltage + peak AC waveform measured at the terminal of the device in all conditions.

7.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
PVDD_x Half-bridge supply DC supply voltage 12 36 38 V
GVDD_x Supply for logic regulators and gate-drive circuitry DC supply voltage 10.8 12 13.2 V
VDD Digital regulator supply voltage DC supply voltage 10.8 12 13.2 V
RL(BTL) Load impedance Output filter inductance within recommended value range 2.7 4 Ω
RL(SE) 1.5 3
RL(PBTL) 1.6 2
LOUT(BTL) Output filter inductance Minimum output inductance at IOC 5 μH
LOUT(SE) 5
LOUT(PBTL) 5
FPWM PWM frame rate selectable for AM interference avoidance; 1% Resistor tolerance Nominal 575 600 625 kHz
AM1 475 500 525
AM2 430 450 470
R(FREQ_ADJ) PWM frame rate programming resistor Nominal; Master mode 9.9 10 10.1 kΩ
AM1; Master mode 19.8 20 20.2
AM2; Master mode 29.7 30 30.3
CPVDD PVDD close decoupling capacitors 1.0 μF
ROC Over-current programming resistor Resistor tolerance = 5% 22 30 kΩ
ROC(LATCHED) Over-current programming resistor Resistor tolerance = 5% 47 64 kΩ
V(FREQ_ADJ) Voltage on FREQ_ADJ pin for slave mode operation Slave mode 3.3 V
TJ Junction temperature 0 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPA3251D2 UNIT
DDV 44-PINS HTSSOP
JEDEC STANDARD 4 LAYER PCB FIXED 85°C HEATSINK TEMPERATURE(2)
RθJA Junction-to-ambient thermal resistance 50.7 2.5(2) °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.36 0.2
RθJB Junction-to-board thermal resistance 24.4 n/a
ψJT Junction-to-top characterization parameter 0.19 0.5
ψJB Junction-to-board characterization parameter 24.2 n/a
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Thermal data are obtained with 85°C heat sink temperature using thermal compound with 0.7W/mK thermal conductivity and 2mil thickness. In this model heat sink temperature is considered to be the ambient temperature and only path for dissipation is to the heatsink.

7.5 Electrical Characteristics

PVDD_X = 36 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 600 kHz, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
DVDD Voltage regulator, only used as reference node VDD = 12 V 3 3.3 3.6 V
AVDD Voltage regulator, only used as reference node VDD = 12 V 7.8 V
IVDD VDD supply current Operating, 50% duty cycle 40 mA
Idle, reset mode 13
IGVDD_X Gate-supply current per full-bridge 50% duty cycle 25 mA
Reset mode 3
IPVDD_X PVDD idle current per full bridge 50% duty cycle with recommended output filter 12.5 mA
Reset mode, No switching 1 mA
ANALOG INPUTS
RIN Input resistance 24 kΩ
VIN Maximum input voltage swing 7 V
IIN Maximum input current 1 mA
G Inverting voltage Gain VOUT/VIN 20 dB
OSCILLATOR
fOSC(IO+) Nominal, Master Mode FPWM × 6 3.45 3.6 3.75 MHz
AM1, Master Mode 2.85 3 3.15
AM2, Master Mode 2.58 2.7 2.82
VIH High level input voltage 1.86 V
VIL Low level input voltage 1.45 V
OUTPUT-STAGE MOSFETs
RDS(on) Drain-to-source resistance, low side (LS) TJ = 25°C, Includes metallization resistance,
GVDD = 12 V		 60 100 mΩ
Drain-to-source resistance, high side (HS) 60 100 mΩ
I/O PROTECTION
Vuvp,VDD,GVDD Undervoltage protection limit, GVDD_x and VDD 9.5 V
Vuvp,VDD, GVDD,hyst (1) 0.6 V
OTW Overtemperature warning, CLIP_OTW(1) 115 125 135 °C
OTWhyst (1) Temperature drop needed below OTW temperature for CLIP_OTW to be inactive after OTW event. 25 °C
OTE(1) Overtemperature error 145 155 165 °C
OTE-OTW(differential) (1) OTE-OTW differential 30 °C
OTEhyst (1) A reset needs to occur for FAULT to be released following an OTE event 25 °C
OLPC Overload protection counter fPWM = 600 kHz 1.7 ms
IOC Overcurrent limit protection Resistor – programmable, nominal peak current in 1Ω load, ROCP = 22 kΩ 14 A
IOC(LATCHED) Overcurrent limit protection Resistor – programmable, peak current in 1Ω load, ROCP = 47kΩ 14 A
IDCspkr DC Speaker Protection Current Threshold BTL current imbalance threshold 1.5 A
IOCT Overcurrent response time Time from switching transition to flip-state induced by overcurrent. 150 ns
IPD Output pulldown current of each half Connected when RESET is active to provide bootstrap charge. Not used in SE mode. 3 mA
STATIC DIGITAL SPECIFICATIONS
VIH High level input voltage M1, M2, OSC_IOP, OSC_IOM, RESET 1.9 V
VIL Low level input voltage 0.8 V
Ilkg Input leakage current 100 μA
OTW/SHUTDOWN (FAULT)
RINT_PU Internal pullup resistance, CLIP_OTW to DVDD, FAULT to DVDD 20 26 32 kΩ
VOH High level output voltage Internal pullup resistor 3 3.3 3.6 V
VOL Low level output voltage IO = 4 mA 200 500 mV
Device fanout CLIP_OTW, FAULT No external pullup 30 devices
(1) Specified by design.

7.6 Audio Characteristics (BTL)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 36 V, GVDD_X = 12 V, RL = 4 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1 µF, mode = 00, AES17 + AUX-0025 measurement filters,unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Power output per channel RL = 3 Ω, 10% THD+N 220 W
RL = 4 Ω, 10% THD+N 175
RL = 3 Ω, 1% THD+N 175
RL = 4 Ω, 1% THD+N 140
THD+N Total harmonic distortion + noise 1 W 0.005%
Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded 60 μV
|VOS| Output offset voltage Inputs AC coupled to GND 20 60 mV
SNR Signal-to-noise ratio(1) 111 dB
DNR Dynamic range 115 dB
Pidle Power dissipation due to Idle losses (IPVDD_X) PO = 0, 4 channels switching(2) 1 W
(1) SNR is calculated relative to 1% THD+N output level.
(2) Actual system idle losses also are affected by core losses of output inductors.

7.7 Audio Characteristics (SE)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 36 V, GVDD_X = 12 V, RL = 2 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 15 μH, CDEM = 1 µF, MODE = 11, AES17 + AUX-0025 measurement filters, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Power output per channel RL = 2 Ω, 10% THD+N 84 W
RL = 3 Ω, 10% THD+N 60
RL = 4 Ω, 10% THD+N 47
RL = 2 Ω, 1% THD+N 67
RL = 3 Ω, 1% THD+N 48
RL = 4 Ω, 1% THD+N 37
THD+N Total harmonic distortion + noise 1 W 0.015%
Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded 115 μV
SNR Signal to noise ratio(1) A-weighted 100 dB
DNR Dynamic range A-weighted 101 dB
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching(2) 0.5 W
(1) SNR is calculated relative to 1% THD+N output level.
(2) Actual system idle losses are affected by core losses of output inductors.

7.8 Audio Characteristics (PBTL)

PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1 kHz, PVDD_X = 36 V, GVDD_X = 12 V, RL = 2 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1 µF, MODE = 10, AES17 + AUX-0025 measurement filters, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Power output per channel RL = 2 Ω, 10% THD+N 355 W
RL = 3 Ω, 10% THD+N 250
RL = 4 Ω, 10% THD+N 195
RL = 2 Ω, 1% THD+N 285
RL = 3 Ω, 1% THD+N 200
RL = 4 Ω, 1% THD+N 155
THD+N Total harmonic distortion + noise 1 W 0.05%
Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded 62 μV
SNR Signal to noise ratio(1) A-weighted 111 dB
DNR Dynamic range A-weighted 111 dB
Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching(2) 1 W
(1) SNR is calculated relative to 1% THD+N output level.
(2) Actual system idle losses are affected by core losses of output inductors.

7.9 Typical Characteristics, BTL Configuration

All Measurements taken at audio frequency = 1 kHz, PVDD_X = 36 V, GVDD_X = 12 V, RL = 4 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1 µF, mode = 00, AES17 + AUX-0025 measurement filters,unless otherwise noted.
TPA3251 D001_SLASE40.gif
RL = 4 Ω P = 1W, 20W, 75W TC = 75°C
Figure 1. Total Harmonic Distortion+Noise vs Frequency
TPA3251 D003_SLASE40.gif
RL = 3 Ω, 4 Ω, 8 Ω TC = 75°C
Figure 3. Total Harmonic Distortion + Noise vs Output Power
TPA3251 D005_SLASE40.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 1% TC = 75°C
Figure 5. Output Power vs Supply Voltage
TPA3251 D007_SLASE40_option1.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 7. System Power Loss vs Output Power
TPA3251 D009_SLASE40_option2.gif
4 Ω, VREF = 25.46 V (1% Output power) FFT = 16384
AUX-0025 filter, 80 kHz analyzer BW TC = 75°C
Figure 9. Noise Amplitude vs Frequency
TPA3251 D002_SLASE40.gif
RL = 4 Ω P = 1W, 20W, 75W TC = 75°C
AUX-0025 filter, 80 kHz analyzer BW
Figure 2. Total Harmonic Distortion+Noise vs Frequency
TPA3251 D004_SLASE40.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 4. Output Power vs Supply Voltage
TPA3251 D006_SLASE40_option2.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 6. System Efficiency vs Output Power
TPA3251 D008_SLASE40.gif
RL = 3 Ω, 4 Ω, 8 Ω THD+N = 10% TC = 75°C
Figure 8. Output Power vs Case Temperature

7.10 Typical Characteristics, SE Configuration

All Measurements taken at audio frequency = 1 kHz, PVDD_X = 36 V, GVDD_X = 12 V, RL = 3 Ω, fS = 600 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 15 μH, CDEM = 680 nF, MODE = 11, AES17 + AUX-0025 measurement filters, unless otherwise noted.
TPA3251 D010_SLASE40.gif
RL = 2Ω, 3Ω, 4Ω TC = 75°C
Figure 10. Total Harmonic Distortion+Noise vs Output Power
TPA3251 D012_SLASE40.gif
RL = 3Ω P = 1W, 10W, 30W TC = 75°C
AUX-0025 filter, 80 kHz analyzer BW
Figure 12. Total Harmonic Distortion+Noise vs Frequency
TPA3251 D014_SLASE40.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 1% TC = 75°C
Figure 14. Output Power vs Supply Voltage
TPA3251 D011_SLASE40.gif
RL = 3Ω P = 1W, 10W, 30W TC = 75°C
Figure 11. Total Harmonic Distortion+Noise vs Frequency
TPA3251 D013_SLASE40.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 10% TC = 75°C
Figure 13. Output Power vs Supply Voltage
TPA3251 D015_SLASE40.gif
RL = 2Ω, 3Ω, 4Ω THD+N = 10% TC = 75°C
Figure 15. Output Power vs Case Temperature

7.11 Typical Characteristics, PBTL Configuration

All Measurements taken at audio frequency = 1kHz, PVDD_X = 36V, GVDD_X = 12V, RL = 2Ω, fS = 600 kHz, ROC = 22kΩ, TC = 75°C, Output Filter: LDEM = 10μH, CDEM = 1 µF, MODE = 10, AES17 + AUX-0025 measurement filters, unless otherwise noted.
TPA3251 D016_SLASE40.gif
RL = 2Ω, 4Ω, 8Ω TC = 75°C
Figure 16. Total Harmonic Distortion+Noise vs Output Power
TPA3251 D018_SLASE40.gif
RL = 2Ω P = 1W, 50W, 150W TC = 75°C
AUX-0025 filter, 80 kHz analyzer BW
Figure 18. Total Harmonic Distortion+Noise vs Frequency
TPA3251 D020_SLASE40.gif
RL = 2Ω, 4Ω, 8Ω THD+N = 1% TC = 75°C
Figure 20. Output Power vs Supply Voltage
TPA3251 D017_SLASE40.gif
RL = 2Ω P = 1W, 50W, 1.50W TC = 75°C
Figure 17. Total Harmonic Distortion+Noise vs Frequency
TPA3251 D019_SLASE40.gif
RL = 2Ω, 4Ω, 8Ω THD+N = 10% TC = 75°C
Figure 19. Output Power vs Supply Voltage
TPA3251 D021_SLASE40.gif
RL = 2Ω, 4Ω, 8Ω THD+N = 10% TC = 75°C
Figure 21. Output Power vs Case Temperature