SLOS490C July 2006 – November 2015
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VDD | Supply voltage | –0.3 | 6 | V | |
VI | Input voltage | INx and SHUTDOWN pins | –0.3 | 0.3 | V |
Continuous total power dissipation | See Dissipation Ratings | ||||
TA | Operating free-air temperature | –40 | 85 | ºC | |
TJ | Junction temperature | –40 | 125 | ºC | |
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds | ZQV, DRB, DGN | 260 | ºC | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VDD | Supply voltage | 2.5 | 5.5 | V | ||
VIH | High-level input voltage | SHUTDOWN | 1.15 | V | ||
VIL | Low-level input voltage | SHUTDOWN | 0.5 | V | ||
VIC | Common-mode input voltage | VDD = 2.5 V, 5.5 V, CMRR ≤ –60 dB | 0.5 | VDD–0.8 | V | |
TA | Operating free-air temperature | –40 | 85 | °C | ||
ZL | Load impedance | 6.4 | 8 | Ω |
THERMAL METRIC(1) | TPA6205A1 | UNIT | |||
---|---|---|---|---|---|
BGA MICROSTAR JUNIOR | SON | MSOP PowerPAD | |||
8 PINS | 8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 134.4 | 57.3 | 109.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 79.8 | 84.0 | 67.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 71.1 | 32.2 | 47.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 5.3 | 3.7 | 4.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 71.0 | 32.2 | 47.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 11.8 | 15.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
[VOO] | Output offset voltage (measured differentially) | VI = 0 V, VDD = 2.5 V to 5.5 V | 9 | mV | |||
PSRR | Power supply rejection ratio | VDD = 2.5 V to 5.5 V | –90 | –70 | dB | ||
CMRR | Common-mode rejection ratio | VDD = 3.6 V to 5.5 V, VIC = 0.5 V to VDD – 0.8 | –70 | –65 | dB | ||
VDD = 2.5 V, VIC = 0.5 V to 1.7 V | –62 | –55 | |||||
VOL | Low-level output voltage | RL = 8 Ω, VIN+ = VDD, VIN– = 0 V or VIN+ = 0 V, VIN– = VDD | VDD = 5.5 V | 0.3 | 0.46 | V | |
VDD = 3.6 V | 0.22 | ||||||
VDD = 2.5 V | 0.19 | 0.26 | |||||
VOH | High-level output voltage | RL = 8 Ω, VIN+ = VDD, VIN– = 0 V or VIN+ = 0 V, VIN– = VDD | VDD = 5.5 V | 4.8 | 5.12 | V | |
VDD = 3.6 V | 3.28 | ||||||
VDD = 2.5 V | 2.1 | 2.24 | |||||
[IIH] | High-level input current | VDD = 5.5 V, VI = 5.8 V | 1.2 | µA | |||
[IIL] | Low-level input current | VDD = 5.5 V, VI = –0.3 V | 1.2 | µA | |||
IDD | Supply current | VDD = 2.5 V to 5.5 V, No load, SHUTDOWN = VIH | 1.7 | 2 | mA | ||
IDD(SD) | Supply current in shutdown mode | SHUTDOWN = VIL , VDD = 2.5 V to 5.5 V, No load | 0.01 | 0.9 | µA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
PO | Output power | THD + N = 1%, f = 1 kHz | VDD = 5 V | 1.25 | W | ||
VDD = 3.6 V | 0.63 | ||||||
VDD = 2.5 V | 0.3 | ||||||
THD+N | Total harmonic distortion plus noise | VDD = 5 V, PO = 1 W, f = 1 kHz | 0.06% | ||||
VDD = 3.6 V, PO = 0.5 W, f = 1 kHz | 0.07% | ||||||
VDD = 2.5 V, PO = 200 mW, f = 1 kHz | 0.08% | ||||||
kSVR | Supply ripple rejection ratio | C(BYPASS) = 0.47°F, VDD = 3.6 V to 5.5 V, Inputs AC-grounded with CI = 2 F | f = 217 Hz to 2 kHz, VRIPPLE = 200 mVPP | –87 | dB | ||
C(BYPASS) = 0.47 F, VDD = 2.5 V to 3.6 V, Inputs AC-grounded with CI = 2 F | f = 217 Hz to 2 kHz, VRIPPLE = 200 mVPP | –82 | |||||
C(BYPASS) = 0.47 F, VDD = 2.5 V to 5.5 V, Inputs AC-grounded with CI = 2 F | f = 40 Hz to 20 kHz, VRIPPLE = 200 mVPP | ≤ –74 | |||||
SNR | Signal-to-noise ratio | VDD = 5 V, PO= 1 W | 104 | dB | |||
Vn | Output voltage noise | f = 20 Hz to 20 kHz | No weighting | 17 | VRMS | ||
A weighting | 13 | ||||||
CMRR | Common-mode rejection ratio | VDD= 2.5 V to 5.5 V, Resistor tolerance = 0.1%, Gain = 4V/V, VICM = 200 mVPP | f = 20 Hz to 1 kHz | ≤ –85 | dB | ||
f = 20 Hz to 20 kHz | ≤ –74 | ||||||
ZI | Input impedance | 2 | MΩ | ||||
ZO | Output impedance | Shutdown mode | >10 | kΩ | |||
Shutdown attenuation | f = 20 Hz to 20 kHz, RF = RI = 20 kΩ | –80 | dB |
PACKAGE | TA ≤ 25°C POWER RATING | DERATING FACTOR | TA ≤ 70°C POWER RATING | TA ≤ 85°C POWER RATING |
---|---|---|---|---|
ZQV | 885 mW | 8.8 mW/°C | 486 mW | 354 mW |
DGN | 2.13 W | 17.1 mW/°C | 1.36 W | 1.11 W |
DRB | 2.7 W | 21.8 mW/°C | 1.7 W | 1.4 W |
FIGURE | ||||
---|---|---|---|---|
PO | Output power | vs Supply voltage | Figure 1 | |
vs Load resistance | Figure 2, Figure 3 | |||
PD | Power dissipation | vs Output power | Figure 4, Figure 5 | |
Maximum ambient temperature | vs Power dissipation | Figure 6 | ||
Total harmonic distortion + noise | vs Output power | Figure 7, Figure 8 | ||
vs Frequency | Figure 9, Figure 10, Figure 11, Figure 12 | |||
vs Common-mode input voltage | Figure 13 | |||
Supply voltage rejection ratio | vs Frequency | Figure 14, Figure 15, Figure 16, Figure 17 | ||
Supply voltage rejection ratio | vs Common-mode input voltage | Figure 18 | ||
GSM Power supply rejection | vs Time | Figure 19 | ||
GSM Power supply rejection | vs Frequency | Figure 20 | ||
CMRR | Common-mode rejection ratio | vs Frequency | Figure 21 | |
vs Common-mode input voltage | Figure 22 | |||
Closed loop gain/phase | vs Frequency | Figure 23 | ||
Open loop gain/phase | vs Frequency | Figure 24 | ||
IDD | Supply current | vs Supply voltage | Figure 25 | |
Start-up time | vs Bypass capacitor | Figure 26 |
Start-Up time is the time it takes (from a low-to-high transition on SHUTDOWN) for the gain of the amplifier to reach –3 dB of the final gain |