SLVSDN8B august   2016  – september 2023 TPD1E10B09-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  AEC-Q101 Qualified
      2. 7.3.2  IEC 61000-4-2 ESD Protection
      3. 7.3.3  ISO 10605 ESD Protection
      4. 7.3.4  IEC 61000-4-5 Surge Protection
      5. 7.3.5  IO Capacitance
      6. 7.3.6  Dynamic Resistance
      7. 7.3.7  DC Breakdown Voltage
      8. 7.3.8  Ultra Low Leakage Current
      9. 7.3.9  Clamping Voltage
      10. 7.3.10 Industrial Temperature Range
      11. 7.3.11 Space-Saving Footprint
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Thermal Information

THERMAL METRIC(1) TPD1E10B09-Q1 UNIT
DPY (X1SON)
2 PINS
RθJA Junction-to-ambient thermal resistance 615.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 404.8 °C/W
RθJB Junction-to-board thermal resistance 493.3 °C/W
ψJT Junction-to-top characterization parameter 127.7 °C/W
ψJB Junction-to-board characterization parameter 493.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.