The TPD1E1B04 is a bidirectional TVS ESD protection diode featuring low RDYN and low clamping voltage. The TPD1E1B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).
The ultra-low dynamic resistance (0.15 Ω) and extremely low clamping voltage (8.5 V at 16-A TLP) ensure system level protection against transient events. This device features a 1-pF IO capacitance making it ideal for protecting interfaces such as USB 2.0.
The TPD1E1B04 is offered in the industry standard 0402 (DPY) package.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPD1E1B04 | X1SON (2) | 0.60 mm x 1.00 mm |
Changes from * Revision (May 2016) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | IO | I/O | ESD Protected Channel. If used as ESD IO, connect pin 2 to ground |
2 | IO | I/O | ESD Protected Channel. If used as ESD IO, connect pin 1 to ground |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Electrical fast transient | IEC 61000-4-4 (5/50 ns) | 80 | A | |
Peak pulse | IEC 61000-4-5 Power (tp - 8/20 µs) | 50 | W | |
IEC 61000-4-5 Current (tp - 8/20 µs) | 6.3 | A | ||
TA | Operating free-air temperature | –40 | 125 | °C |
Tstg | Storage temperature | –65 | 155 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±30000 | V |
IEC 61000-4-2 air-gap discharge | ±30000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Input pin voltage | –3.6 | 3.6 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD1E1B04 | UNIT | |
---|---|---|---|
DPY (X1SON) | |||
2 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 420 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 169.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 276.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 122.1 | °C/W |
ψJB | Junction-to-board characterization parameter | 157.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | IIO < 100 nA | –3.6 | 3.6 | V | |
VBRF | Breakdown voltage, any IO pin to GND | Measured as the maximum voltage before device snaps back into VHOLD voltage | 6.4 | V | ||
VBRR | Breakdown voltage, GND to any IO pin | Measured as the maximum voltage before device snaps back into VHOLD voltage | –6.4 | V | ||
VHOLD | Holding voltage | IIO = 1 mA, TA = 25°C | 5 | 6 | 6.6 | V |
VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND | 6.3 | V | ||
IPP = 5 A, TLP, from IO to GND | 6.8 | |||||
IPP = 16 A, TLP, from IO to GND | 8.5 | |||||
IPP = 1 A, TLP, from GND to IO | 6.3 | |||||
IPP = 5 A, TLP, from GND to IO | 6.8 | |||||
IPP = 16 A, TLP, from GND to IO | 8.5 | |||||
ILEAK | Leakage current, IO to GND | VIO = ±2.5 V | 0.2 | 100 | nA | |
RDYN | Dynamic resistance | IO to GND | 0.15 | Ω | ||
GND to IO | 0.15 | |||||
CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C | 1 | 1.3 | pF |
The TPD1E1B04 is a bidirectional ESD Protection Diode with ultra-low clamping voltage. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-low clamping makes this device ideal for protecting any sensitive signal pins.
The I/O pins can withstand ESD events up to ±30-kV contact and ±30-kV air gap. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 6.3 A and 50 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 1 pF (typical) and 1.3 pF (maximum).
The DC breakdown voltage of each I/O pin is ±6.4 V typical. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V.
The I/O pins feature an low leakage current of 100 nA (maximum) with a bias of ±2.5 V.
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 8.5 V (IPP = 16 A).
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The TPD1E1B04 is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±30 kV (contact or air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD1E1B04 (usually within 10s of nano-seconds) the device reverts to passive.