SLVSC77D August 2013 – April 2016 TPD2E1B06
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Operating temperature | –40 | 125 | °C | |
IPP | Peak pulse current (tp = 8/20 μs)(2) | 2.5 | A | |
PPP | Peak pulse power (tp = 8/20 μs)(2) | 35 | W | |
Tstg | Storage temperature | –65 | 155 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge(2) | ±10000 | V |
IEC 61000-4-2 air-gap discharge(2) | ±15000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Pin IOA1 to IOA2; Pin IOB1 to IOB2 | –5.5 | 5.5 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD2E1B06 | UNIT | |
---|---|---|---|
DRL (SOT) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 349.7 | ºC/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 120.5 | ºC/W |
RθθJB | Junction-to-board thermal resistance | 171.4 | ºC/W |
ψJT | Junction-to-top characterization parameter | 10.8 | ºC/W |
ψJB | Junction-to-board characterization parameter | 169.4 | ºC/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse standoff voltage | 5.5 | V | |||
VCLAMP | Clamp voltage with ESD strike | IPP = 1 A, TLP, I/O to GND(1)(2) | 11 | V | ||
IPP = 5 A, TLP, I/O to GND(1)(2) | 15 | |||||
VCLAMP | Clamp voltage with ESD strike | IPP = 1 A, TLP, GND to I/O (1)(2) | 11 | V | ||
IPP = 5 A, TLP, GND to I/O (1)(2) | 15 | |||||
RDYN | Dynamic resistance | 0.9 | Ω | |||
CL1 | Pin 2 and 5 capacitance | Pin 1 and 4 = GND, f = 1 MHz, VBIAS = 2.5 V(2)(3) | 0.85 | pF | ||
CL2 | Pin 1 and 4 capacitance | Pin 2 and 5 = GND, f = 1 MHz, VBIAS = 2.5 V(2)(4) | 1.05 | pF | ||
VBR | Break-down voltage | IIO = 1 mA | 7 | 9.5 | V | |
ILEAK | Leakage current | VBIAS = +2.5 V | 1 | 10 | nA |